Unexpectedly High Minority‐Carrier Lifetimes Exceeding 20 ms Measured on 1.4‐Ω cm n‐Type Silicon Wafers

Physica Status Solidi - Rapid Research Letters - Tập 11 Số 11 - 2017
Boris Veith‐Wolf1, Jan Schmidt2,1
1Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal, Germany
2Department of Solar Energy, Institute of Solid‐State Physics, Leibniz Universität Hannover Appelstrasse 2 30167 Hannover Germany

Tóm tắt

We measure very high minority‐carrier lifetimes exceeding 20 ms on 1.4‐Ω cm n‐type Czochralski silicon wafers passivated using plasma‐assisted atomic‐layer‐deposited Al2O3 on both wafer surfaces. The measured maximum effective lifetimes are surprisingly high as they significantly exceed the intrinsic lifetime limit previously reported in the literature. We are able to measure such high lifetimes by realizing an exceptionally homogeneous Al2O3 surface passivation on large‐area samples (12.5 × 12.5 cm2). The importance of the homogeneous passivation is demonstrated by comparison with samples of locally reduced passivation quality.

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Physica Status Solidi - Rapid Research Letters

Tập 11 Số 11

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