Physica Status Solidi (A) Applications and Materials Science

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Influence of Sb doping on optical and structural properties of ZnO by MOCVD
Physica Status Solidi (A) Applications and Materials Science - Tập 208 Số 4 - Trang 825-828 - 2011
Jianze Zhao, Hongwei Liang, Jingchang Sun, Qiuju Feng, Shuoshi Li, Jiming Bian, Lizhong Hu, Guotong Du, Jingjian Ren, Jianlin Liu
AbstractSb‐doped zinc oxide (ZnO) films grown by metal organic chemical vapor deposition (MOCVD) were investigated. The influence of Sb‐doping concentration on the optical and structural properties of ZnO was investigated. The deep‐level emission was suppressed gradually by Sb doping. The grain size of ZnO was also increased by Sb doping. The reasons for improvemen...... hiện toàn bộ
Cu in In2S3: interdiffusion phenomena analysed by high kinetic energy X‐ray photoelectron spectroscopy
Physica Status Solidi (A) Applications and Materials Science - Tập 206 Số 5 - Trang 1059-1062 - 2009
Paul Pistor, N. Allsop, W. Braun, R. Caballero, Christian Camus, Ch.‐H. Fischer, Mihaela Gorgoi, A. Grimm, Benjamin Johnson, Timo Kropp, Iver Lauermann, Sebastian Lehmann, Harry Mönig, Susan Schorr, A. Weber, R. Klenk
AbstractChalcopyrite thin film solar cells with an In2S3 buffer showed high efficiencies above 15%, but only after annealing at 200 °C. One possible explanation is a Cu interdiffusion at the absorber/buffer interface. We were able to directly measure a Cu interdiffusion with a new tool at the BESSY synchrotron facility: HIK...... hiện toàn bộ
Morphological, structural, and photoelectrochemical characterization of n‐type Cu2O thin films obtained by electrodeposition
Physica Status Solidi (A) Applications and Materials Science - Tập 209 Số 12 - Trang 2470-2475 - 2012
Paula Grez, Francisco Herrera, G. Riveros, A. M. R. Ramírez, Rodrigo Henríquez, Enrique A. Dalchiele, Ricardo Schrebler
AbstractThin films of copper(I) oxide (Cu2O) were electrodeposited on fluorine‐doped tin oxide predeposited glass substrates, by reduction of Cu2+ from Cu(II) acetate acid aqueous solutions. The Cu2O was potentiostatically grown at a potential value of −0.450 V (vs. SMSE) at 70 °C. The Cu2... hiện toàn bộ
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
Physica Status Solidi (A) Applications and Materials Science - Tập 213 Số 11 - Trang 2844-2849 - 2016
Nicholas E. Grant, В. П. Маркевич, Jack Mullins, А. R. Peaker, Fiacre Rougieux, Daniel Macdonald, John D. Murphy
We have observed very large changes in the minority carrier lifetime when high purity float‐zone (FZ) silicon wafers are subject to heat‐treatments in the range of 200–1100 °C. Recombination centres were found to become activated upon annealing at 450–700 °C, causing significant reductions in the bulk lifetime, detrimental for high efficiency solar cells and stable ...... hiện toàn bộ
Study of donor–acceptor pair luminescence in highly doped and compensated Cz silicon
Physica Status Solidi (A) Applications and Materials Science - Tập 209 Số 10 - Trang 1917-1920 - 2012
B. Dridi Rezgui, Jordi Veirman, Sébastien Dubois, Olivier Palais
AbstractThe photoluminescence (PL) of highly doped and compensated Czochralski silicon has been investigated. The low‐temperature PL spectra show a donor‐to‐acceptor zero‐phonon broad band and clearly distinguished phonon replica shifting to the blue side with increasing the net doping concentration in silicon crystal. The data are consistent with DAP luminescence ...... hiện toàn bộ
Theory of ferromagnetic semiconductors
Physica Status Solidi (A) Applications and Materials Science - Tập 204 Số 1 - Trang 15-32 - 2007
Hiroshi Katayama‐Yoshida, Kazunori Satō, Tetsuya Fukushima, Masayuki Toyoda, Hidetoshi Kizaki, Van An Dinh, R. Zeller
AbstractBased upon ab initio electronic structure calculations by the Korringa–Kohn–Rostoker coherent‐potential approximation (KKR‐CPA) method within the local‐density approximation (LDA), we propose a unified physical picture of magnetism and an accurate calculation method of Curie temperature (T C... hiện toàn bộ
Dislocation imaging for electronics application crystal selection
Physica Status Solidi (A) Applications and Materials Science - Tập 204 Số 12 - Trang 4298-4304 - 2007
A. Secroun, Ovidiu Brinza, André Tardieu, Jocelyn Achard, François Silva, X. Bonnin, K. De Corte, Ans Anthonis, Mark E. Newton, J. Ristein, Peter Geithner, A. Gicquel
AbstractHigh power electronics are today a real challenge for large band gap materials. Devices as simple as switches have to work at ever higher powers and demand material with exceptional properties: in particular, a high breakdown voltage (at least a few 106 V/cm), a high mobility‐lifetime product (at least 10–3 cm... hiện toàn bộ
Preferential adsorption of NH3gas molecules on MWCNT defect sites probed usingin situRaman spectroscopy
Physica Status Solidi (A) Applications and Materials Science - Tập 214 Số 10 - 2017
George Chimowa, Boitumelo J. Matsoso, Neil J. Coville, Suprakas Sinha Ray, Emmanuel Flahaut, Teresa Hungrı́a, Lucien Datas, Bonex Mwakikunga
The preferential adsorption of NH3gas molecules on multi‐walled carbon nanotubes (MWCNTs) was studied usingin situRaman spectroscopy. It was observed that the full widths at half maximum of the G band and the intensity ratioI2D/IG... hiện toàn bộ
Growth of GaN crystals by Na flux LPE method
Physica Status Solidi (A) Applications and Materials Science - Tập 207 Số 6 - Trang 1283-1286 - 2010
Yusuke Mori, Yasuo Kitaoka, Mamoru Imade, Fumio Kawamura, Nobuya Miyoshi, Masashi Yoshimura, T. Sasaki
AbstractHigh‐quality and low‐cost bulk crystals are needed in the field of group III nitride semiconductors in order to develop optical and electrical devices. Controlling the nucleation phenomenon and solution condition during growth is important for growth of bulk GaN crystal by the Na flux method. The carbon doping into the solution and the forced induction of s...... hiện toàn bộ
UV cathodoluminescence of Gd3+doped and Gd3+Pr3+co-doped YAlO3epitaxial thin films
Physica Status Solidi (A) Applications and Materials Science - Tập 212 Số 3 - Trang 703-706 - 2015
Yuhei Shimizu, Kazushige Ueda, Hiroshi Takashima, Yoshiyuki Inaguma
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