Physica Status Solidi (A) Applications and Materials Science

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Properties of TiO2‐based transparent conducting oxides
Physica Status Solidi (A) Applications and Materials Science - Tập 207 Số 7 - Trang 1529-1537 - 2010
Taro Hitosugi, Naoomi Yamada, Shoichiro Nakao, Yasushi Hirose, Tetsuya Hasegawa
AbstractThe development and properties of titanium dioxide (TiO2)‐based transparent conducting oxides (TCO), which exhibit properties comparable to those of In2–xSnxO3 (ITO), are reviewed in this article. An epitaxial thin film of anatase Ti0.94Nb0.06O2 exhibited a resistivity (ρ) of 2.3 × 10−4 Ω cm and internal transmittance of ∼95% in the visible light region. Furthermore, we prepared polycrysta... hiện toàn bộ
Influence of Sb doping on optical and structural properties of ZnO by MOCVD
Physica Status Solidi (A) Applications and Materials Science - Tập 208 Số 4 - Trang 825-828 - 2011
Jianze Zhao, Hongwei Liang, Jingchang Sun, Qiuju Feng, Shuoshi Li, Jiming Bian, Lizhong Hu, Guotong Du, Jingjian Ren, Jianlin Liu
AbstractSb‐doped zinc oxide (ZnO) films grown by metal organic chemical vapor deposition (MOCVD) were investigated. The influence of Sb‐doping concentration on the optical and structural properties of ZnO was investigated. The deep‐level emission was suppressed gradually by Sb doping. The grain size of ZnO was also increased by Sb doping. The reasons for improvement in optical and structural prope... hiện toàn bộ
Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks
Physica Status Solidi (A) Applications and Materials Science - Tập 218 Số 2 - 2021
Soeun Jin, Donguk Lee, Myonghoon Kwak, Ah Ra Kim, Hyunsang Hwang, Hyuknyeong Cheon, Jung‐Dae Kwon, Yonghun Kim
Cu in In2S3: interdiffusion phenomena analysed by high kinetic energy X‐ray photoelectron spectroscopy
Physica Status Solidi (A) Applications and Materials Science - Tập 206 Số 5 - Trang 1059-1062 - 2009
Paul Pistor, N. Allsop, W. Braun, R. Caballero, Christian Camus, Ch.‐H. Fischer, Mihaela Gorgoi, A. Grimm, Benjamin Johnson, Timo Kropp, Iver Lauermann, Sebastian Lehmann, Harry Mönig, Susan Schorr, A. Weber, R. Klenk
AbstractChalcopyrite thin film solar cells with an In2S3 buffer showed high efficiencies above 15%, but only after annealing at 200 °C. One possible explanation is a Cu interdiffusion at the absorber/buffer interface. We were able to directly measure a Cu interdiffusion with a new tool at the BESSY synchrotron facility: HIKE (high kinetic energy X‐ray photoelectron spectroscopy). Due to its increa... hiện toàn bộ
Cathodoluminescent characteristics of Sm‐doped ZnAl2O4 nanostructured powders
Physica Status Solidi (A) Applications and Materials Science - Tập 202 Số 1 - Trang 102-107 - 2005
Erika Martínez Sánchez, M. Garcı́a-Hipólito, J. Guzmán, F. Ramos‐Brito, J. Santoyo‐Salazar, Rafael Martínez-Martínez, O. Álvarez‐Fregoso, M. I. Ramos‐Cortes, J. J. Mendez‐Delgado, C. Falcony
AbstractCathodoluminescent (CL) powders of zinc aluminate activated with samarium ions have been prepared by a co‐precipitation chemical process. Different doping concentrations in the start mixture and sintering temperatures for the precipitated powder were studied. It was observed that the crystalline characteristics of the powders depend upon the sintering temperature. For temperatures higher t... hiện toàn bộ
Controlled dewetting as fabrication and patterning strategy for metal nanostructures
Physica Status Solidi (A) Applications and Materials Science - Tập 212 Số 8 - Trang 1662-1684 - 2015
F. Ruffino, Maria Grazia Grimaldi
Effect of O2 partial pressure and substrate temperature on the plasma emission spectra and ZnO growth behavior
Physica Status Solidi (A) Applications and Materials Science - Tập 205 Số 4 - Trang 961-964 - 2008
Ming Liu, C. Y., Qingyu Zhang
AbstractAn on‐line measurement of optical emission spectrum (OES) was used to study the variation of Zn and O components in the plasma of ZnO film growth with reactive radio‐frequency magnetron sputtering method. It was found that the decline of all the Zn emission lines shows three different stages with the increase of oxygen partial pressure (PO), corresponding to metal sputtering (PO < 6.0 × 10... hiện toàn bộ
Study on trapping center and trapping effect in MSM ultraviolet photo‐detector on microcrystalline diamond film
Physica Status Solidi (A) Applications and Materials Science - Tập 207 Số 2 - Trang 468-473 - 2010
Lanxi Wang, Xuekang Chen, Wu Gan, Wantu Guo, Yunfei Wang, Shengzhu Cao, Kaiwen Shang, Weihua Han
AbstractA MSM (metal‐semiconductor‐metal) ultraviolet (UV) photo‐detector was fabricated on a high‐quality diamond film deposited by microwave chemical vapor deposition on a Si substrate. Charge‐based deep level transient spectroscopy (Q‐DLTS) was used for obtaining the information on activation energy (Ea), capture cross section (σs) and concentration (Nt) of trapping centers in the band gap of t... hiện toàn bộ
Large electrostrictive effect in K0.99Li0.01Ta1−xNbxO3 lead‐free single crystals
Physica Status Solidi (A) Applications and Materials Science - Tập 209 Số 11 - Trang 2291-2294 - 2012
Hao Tian, Jieshu Jia, Zhongxiang Zhou, Deying Chen
AbstractParaelectric K0.99Li0.01Ta1−xNbxO3 (x = 0.38, 0.39, 0.40) lead‐free single crystals have been grown by the top‐seeded solution growth method. All the crystals have Curie temperature (Tc) close to room temperature (RT), and possess large relative dielectric constants near Tc. A scanning Michelson interferometer was used to investigate the electrostrictive (ES) behavior of the crystals. The ... hiện toàn bộ
Tin monoxide as an s‐orbital‐based p‐type oxide semiconductor: Electronic structures and TFT application
Physica Status Solidi (A) Applications and Materials Science - Tập 206 Số 9 - Trang 2187-2191 - 2009
Yoichi Ogo, Hidenori Hiramatsu, Kenji Nomura, Hiroshi Yanagi, Toshio Kamiya, Mutsumi Kimura, Masahiro Hirano, Hideo Hosono
AbstractTin monoxide (SnO) is a stable p‐type oxide semiconductor. This paper reports electrical properties, electronic structures, and thin‐film transistors (TFTs) of SnO. Epitaxial films were fabricated by pulsed laser deposition. The Hall mobility and the hole density of the epitaxial films were 2.4 cm2 V−1 s−1 and 2.5 × 1017, respectively. X‐ray photoelectron spectroscopy (PES) indicated that ... hiện toàn bộ
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