Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks

Physica Status Solidi (A) Applications and Materials Science - Tập 218 Số 2 - 2021
Soeun Jin1, Donguk Lee2, Myonghoon Kwak2, Ah Ra Kim3, Hyunsang Hwang2, Hyuknyeong Cheon4, Jung‐Dae Kwon3, Yonghun Kim3
1Department of Advanced Materials Engineering, University of Science and Technology (UST), 217 Gajeong-ro, Yuseong-gu, Daejeon, 34113, Republic of Korea
2Center for Single Atom-based Semiconductor Device, Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 790-784 Republic of Korea
3Materials Center for Energy Convergence, Surface Technology Division, Korea Institute of Materials Science (KIMS), 797 Changwondaero, Sungsan-gu, Changwon, Gyeongnam, 51508 Republic of Korea
4Technology Development Center, Gyeonggi Techno Park, Nano-view, 705, Haean-ro, Sangrok-gu, Gyeonggi-do, 15588 Republic of Korea

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Physica Status Solidi (A) Applications and Materials Science

Tập 218 Số 2

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