Physica Status Solidi (A) Applications and Materials Science
SCIE-ISI SCOPUS (2005-2025)
1862-6300
1862-6319
Đức
Cơ quản chủ quản: Wiley-VCH Verlag , WILEY-V C H VERLAG GMBH
Lĩnh vực:
Condensed Matter PhysicsElectrical and Electronic EngineeringMaterials ChemistrySurfaces, Coatings and FilmsSurfaces and InterfacesElectronic, Optical and Magnetic Materials
Các bài báo tiêu biểu
Studies of lithium argyrodite solid electrolytes for all‐solid‐state batteries
Tập 208 Số 8 - Trang 1804-1807 - 2011
AbstractRechargeable all‐solid‐state lithium Li‐ion batteries (AS‐LIBs) are
attractive power sources for electrochemical applications; due to their
potentiality in improving safety and stability over conventional batteries with
liquid electrolytes. AS‐LIBs require a Li‐fast ion conductor (FIC) as the solid
electrolyte. Finding a solid electrolyte with high ionic conductivity and
compatibility with...
Tin monoxide as an s‐orbital‐based p‐type oxide semiconductor: Electronic structures and TFT application
Tập 206 Số 9 - Trang 2187-2191 - 2009
AbstractTin monoxide (SnO) is a stable p‐type oxide semiconductor. This paper
reports electrical properties, electronic structures, and thin‐film transistors
(TFTs) of SnO. Epitaxial films were fabricated by pulsed laser deposition. The
Hall mobility and the hole density of the epitaxial films were 2.4 cm2 V−1 s−1
and 2.5 × 1017, respectively. X‐ray photoelectron spectroscopy (PES) indicated
that ...
Theory of ferromagnetic semiconductors
Tập 204 Số 1 - Trang 15-32 - 2007
AbstractBased upon ab initio electronic structure calculations by the
Korringa–Kohn–Rostoker coherent‐potential approximation (KKR‐CPA) method within
the local‐density approximation (LDA), we propose a unified physical picture of
magnetism and an accurate calculation method of Curie temperature (T C) in
dilute magnetic semiconductors (DMSs) in II–VI and III–V compound
semiconductors. We also propo...
Properties of TiO2‐based transparent conducting oxides
Tập 207 Số 7 - Trang 1529-1537 - 2010
AbstractThe development and properties of titanium dioxide (TiO2)‐based
transparent conducting oxides (TCO), which exhibit properties comparable to
those of In2–xSnxO3 (ITO), are reviewed in this article. An epitaxial thin film
of anatase Ti0.94Nb0.06O2 exhibited a resistivity (ρ) of 2.3 × 10−4 Ω cm and
internal transmittance of ∼95% in the visible light region. Furthermore, we
prepared polycrysta...
Effect of copper salt and thiourea concentrations on the formation of Cu2ZnSnS4 thin films by spray pyrolysis
Tập 207 Số 1 - Trang 149-156 - 2010
AbstractThin films of Cu2ZnSnS4 (CZTS), a potential candidate for absorber layer
in thin film heterojunction solar cell, have been deposited by spray pyrolysis
technique onto soda‐lime glass substrates held at a substrate temperature (Ts)
of 643 K. The effect of copper salt and thiourea concentrations on the formation
of Cu2ZnSnS4 thin films is investigated. CZTS films formed under optimized
condi...
Growth and properties of nanocrystalline diamond films
Tập 203 Số 13 - Trang 3375-3386 - 2006
AbstractThe aim of this paper is to summarise recent progress in the growth of
small grain‐sized Chemical Vapor Deposition (CVD) diamond often called
nanocrystalline diamond, i.e., diamond with grains typically smaller than 500
nm. Nanocrystalline (NCD) and Ultrananocrystalline diamond (UNCD) films are new
materials offering interesting applications to nanobioelectronics and
electrochemistry. Howe...
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone silicon
Tập 213 Số 11 - Trang 2844-2849 - 2016
We have observed very large changes in the minority carrier lifetime when high
purity float‐zone (FZ) silicon wafers are subject to heat‐treatments in the
range of 200–1100 °C. Recombination centres were found to become activated upon
annealing at 450–700 °C, causing significant reductions in the bulk lifetime,
detrimental for high efficiency solar cells and stable high powered devices.
Photolumin...
Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation
Tập 212 Số 11 - Trang 2365-2384 - 2015
With optical/electronic devices of the next generation in mind, we provide a
guideline for the growth of homoepitaxial diamond films that possess higher
crystalline quality, higher chemical purity, and a higher carbon isotopic ratio.
A custom‐built microwave plasma‐assisted chemical vapor deposition system was
constructed to achieve these requirements. To improve both the purity and
crystalline qu...
Controlled dewetting as fabrication and patterning strategy for metal nanostructures
Tập 212 Số 8 - Trang 1662-1684 - 2015