Physica Status Solidi (A) Applications and Materials Science
SCIE-ISI SCOPUS (1983,1987,2005-2023)
1862-6300
1862-6319
Đức
Cơ quản chủ quản: Wiley-VCH Verlag , WILEY-V C H VERLAG GMBH
Lĩnh vực:
Condensed Matter PhysicsElectrical and Electronic EngineeringMaterials ChemistrySurfaces, Coatings and FilmsSurfaces and InterfacesElectronic, Optical and Magnetic Materials
Các bài báo tiêu biểu
Studies of lithium argyrodite solid electrolytes for all‐solid‐state batteriesAbstract Rechargeable all‐solid‐state lithium Li‐ion batteries (AS‐LIBs) are attractive power sources for electrochemical applications; due to their potentiality in improving safety and stability over conventional batteries with liquid electrolytes. AS‐LIBs require a Li‐fast ion conductor (FIC) as the solid electrolyte. Finding a solid electrolyte with high ionic co... ...
Tập 208 Số 8 - Trang 1804-1807 - 2011
Tin monoxide as an s‐orbital‐based p‐type oxide semiconductor: Electronic structures and TFT applicationAbstract Tin monoxide (SnO) is a stable p‐type oxide semiconductor. This paper reports electrical properties, electronic structures, and thin‐film transistors (TFTs) of SnO. Epitaxial films were fabricated by pulsed laser deposition. The Hall mobility and the hole density of the epitaxial films were 2.4 cm2 V−1 s−1... ...
Tập 206 Số 9 - Trang 2187-2191 - 2009
Theory of ferromagnetic semiconductorsAbstract Based upon ab initio electronic structure calculations by the Korringa–Kohn–Rostoker coherent‐potential approximation (KKR‐CPA) method within the local‐density approximation (LDA), we propose a unified physical picture of magnetism and an accurate calculation method of Curie temperature (T C...
Tập 204 Số 1 - Trang 15-32 - 2007
Properties of TiO2‐based transparent conducting oxidesAbstract The development and properties of titanium dioxide (TiO2 )‐based transparent conducting oxides (TCO), which exhibit properties comparable to those of In2–x Snx 3 (ITO), are reviewed in this article. An epitaxial thin film o... ...
Tập 207 Số 7 - Trang 1529-1537 - 2010
Effect of copper salt and thiourea concentrations on the formation of Cu2ZnSnS4 thin films by spray pyrolysisAbstract Thin films of Cu2 ZnSnS4 (CZTS), a potential candidate for absorber layer in thin film heterojunction solar cell, have been deposited by spray pyrolysis technique onto soda‐lime glass substrates held at a substrate temperature (T s ) of 643 K. The effect of copper salt an... ...
Tập 207 Số 1 - Trang 149-156 - 2010
Growth and properties of nanocrystalline diamond filmsAbstract The aim of this paper is to summarise recent progress in the growth of small grain‐sized Chemical Vapor Deposition (CVD) diamond often called nanocrystalline diamond, i.e., diamond with grains typically smaller than 500 nm. Nanocrystalline (NCD) and Ultrananocrystalline diamond (UNCD) films are new materials offering interesting applications to nanobioelect... ...
Tập 203 Số 13 - Trang 3375-3386 - 2006
Permanent annihilation of thermally activated defects which limit the lifetime of float‐zone siliconWe have observed very large changes in the minority carrier lifetime when high purity float‐zone (FZ) silicon wafers are subject to heat‐treatments in the range of 200–1100 °C. Recombination centres were found to become activated upon annealing at 450–700 °C, causing significant reductions in the bulk lifetime, detrimental for high efficiency solar cells and stable ...
Tập 213 Số 11 - Trang 2844-2849 - 2016
Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formationWith optical/electronic devices of the next generation in mind, we provide a guideline for the growth of homoepitaxial diamond films that possess higher crystalline quality, higher chemical purity, and a higher carbon isotopic ratio. A custom‐built microwave plasma‐assisted chemical vapor deposition system was constructed to achieve these requirements. To improve bo...
Tập 212 Số 11 - Trang 2365-2384 - 2015
Controlled dewetting as fabrication and patterning strategy for metal nanostructures
Tập 212 Số 8 - Trang 1662-1684 - 2015