Homoepitaxial diamond film growth: High purity, high crystalline quality, isotopic enrichment, and single color center formation

Physica Status Solidi (A) Applications and Materials Science - Tập 212 Số 11 - Trang 2365-2384 - 2015
Tokuyuki Teraji1, Takashi Yamamoto2,1,3, Kenji Watanabe1, Yasuo Koide1, Junichi Isoya4, Shinobu Onoda2, Takeshi Ohshima2, Lachlan J. Rogers3, Fedor Jelezko3, Philipp Neumann5, Jörg Wrachtrup5, Satoshi Koizumi1
1National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan
2Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, Gunma 370-1292, Japan
3Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany
4University of Tsukuba, Tsukuba, Ibaraki 305-8550, Japan
5University of Stuttgart, Pfaffenwaldring 57, 70569 Stuttgart, Germany

Tóm tắt

With optical/electronic devices of the next generation in mind, we provide a guideline for the growth of homoepitaxial diamond films that possess higher crystalline quality, higher chemical purity, and a higher carbon isotopic ratio. A custom‐built microwave plasma‐assisted chemical vapor deposition system was constructed to achieve these requirements. To improve both the purity and crystalline quality of homoepitaxial diamond films, an advanced growth condition was applied: higher oxygen concentration in the growth ambient. Under this growth condition for high‐quality diamond, a thick diamond film of ≥30 μm was deposited reproducibly while maintaining high purity and a flat surface. Then, combining this advanced growth condition for non‐doped diamond with a unique doping technique that provides parts‐per‐billion order doping, single‐color centers of either nitrogen‐vacancy or silicon‐vacancy centers that show excellent properties were formed. The new idea of using these color centers as a probe for detecting tiny amounts of impurities was presented. These advanced growth and characterization techniques are expected to open up new fields of diamond research that require extremely low‐impurity concentration, for use in power devices and quantum information devices.

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Physica Status Solidi (A) Applications and Materials Science

Tập 212 Số 11

2365-2384

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