Properties of TiO2‐based transparent conducting oxides

Physica Status Solidi (A) Applications and Materials Science - Tập 207 Số 7 - Trang 1529-1537 - 2010
Taro Hitosugi1, Naoomi Yamada2, Shoichiro Nakao2, Yasushi Hirose3, Tetsuya Hasegawa3
1Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, 980-8577 Sendai, Japan
2Kanagawa Academy of Science and Technology (KAST), 213‐0012 Kawasaki, Japan
3Department of Chemistry, University of Tokyo, 113‐0033 Tokyo, Japan

Tóm tắt

Abstract

The development and properties of titanium dioxide (TiO2)‐based transparent conducting oxides (TCO), which exhibit properties comparable to those of In2–xSnxO3 (ITO), are reviewed in this article. An epitaxial thin film of anatase Ti0.94Nb0.06O2 exhibited a resistivity (ρ) of 2.3 × 10−4 Ω cm and internal transmittance of ∼95% in the visible light region. Furthermore, we prepared polycrystalline films with ρ of 6.4 × 10−4 Ω cm at room temperature on glass substrates by using sputtering. We focus on characteristics unique to TiO2‐based TCO, such as a high refractive index, high transmittance in infrared, and high stability in reducing atmospheres. Possible applications of TiO2‐based TCOs, as well as the mechanism of the transparent conducting properties found in this d‐electron‐based TCO, are discussed in this review.

magnified image

Photograph showing TiO2‐based TCO on a transparent plastic film. Note that the film appears greenish due to interference in the film originating from its high refractive index. This high refractive index is one of the unique characteristics of TiO2‐based TCO.

Từ khóa


Tài liệu tham khảo

10.1557/mrs2000.256

10.1557/mrs2007.29

10.1016/j.solmat.2008.07.009

Hartnagel H. L., 1995, Semiconducting Transparent Thin Films

10.1063/1.91809

10.1063/1.337534

10.1016/j.tsf.2009.09.044

10.1038/nphoton.2009.32

10.1063/1.1826231

10.1063/1.3326943

10.1143/JJAP.45.L291

10.1557/mrs2000.149

10.1063/1.1949728

10.1143/JJAP.44.L1063

10.1016/0038-1098(77)90101-6

10.1063/1.356306

10.1287/opre.33.2.312

Fujishima A., 1972, Nature, 37, 238

10.1016/j.progsolidstchem.2004.08.001

10.1038/35023243

10.1063/1.2397006

10.1126/science.1056186

10.1143/JJAP.44.8269

10.1088/0268-1242/20/4/012

10.1103/RevModPhys.31.646

10.1063/1.2208448

10.1063/1.2750407

10.1103/PhysRev.87.876

10.1016/0022-0248(93)90842-K

10.1063/1.355801

10.1016/j.jpcs.2003.12.009

10.1016/j.mser.2003.12.002

10.1016/S0167-5729(00)00005-4

10.1063/1.352887

10.1063/1.3142424

10.1063/1.2337281

10.1063/1.3284960

10.1063/1.2362990

10.1063/1.2785152

10.1063/1.2434005

10.1016/j.tsf.2007.10.093

10.1143/JJAP.44.L1063

10.1063/1.3277057

10.1063/1.2742310

10.1143/APEX.1.115001

10.1016/j.tsf.2007.10.047

10.1016/j.tsf.2009.07.205

10.1007/978-3-662-04011-9

10.1016/j.tsf.2008.11.090

10.1143/JJAP.46.5275

10.1143/JJAP.39.4158

10.1002/pssa.2210290110

Manifacier J.‐C., Mater. Res. Bull., 14, 163, 10.1016/0025-5408(79)90115-6

10.1103/PhysRevB.79.165108

10.1063/1.3148267

10.1063/1.3157283

10.1143/APEX.1.111203

10.1103/PhysRevB.61.13445

10.1039/b408864f

10.1557/mrs2000.152

10.1103/PhysRevB.55.7014

10.1063/1.337534

10.1063/1.360960

10.1103/PhysRevB.79.165108

10.1002/pssa.2210710102

10.1063/1.2337281

10.1016/j.tsf.2005.12.057

10.1016/S0040-6090(03)00118-4

10.1143/JJAP.45.L291