Tin monoxide as an s‐orbital‐based p‐type oxide semiconductor: Electronic structures and TFT application

Physica Status Solidi (A) Applications and Materials Science - Tập 206 Số 9 - Trang 2187-2191 - 2009
Yoichi Ogo1, Hidenori Hiramatsu2, Kenji Nomura2, Hiroshi Yanagi1, Toshio Kamiya2,1, Mutsumi Kimura3, Masahiro Hirano2,4, Hideo Hosono2,4,1
1Materials and Structures Laboratory, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
2ERATO-SORST, Japan Science and Technology Agency, Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
3Department of Electronics and Informatics, Ryukoku University, Seta, Otsu, 520-2194, Japan
4Frontier Research Center, Tokyo Institute of Technology, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Tóm tắt

AbstractTin monoxide (SnO) is a stable p‐type oxide semiconductor. This paper reports electrical properties, electronic structures, and thin‐film transistors (TFTs) of SnO. Epitaxial films were fabricated by pulsed laser deposition. The Hall mobility and the hole density of the epitaxial films were 2.4 cm2 V−1 s−1 and 2.5 × 1017, respectively. X‐ray photoelectron spectroscopy (PES) indicated that the closed‐shell 5s2 orbitals of Sn2+ ions heavily contribute to the hole conduction path in SnO. Top gate type TFTs (W/L = 300/50 µm) employing 20 nm thick SnO channels exhibited field‐effect mobilities µsat = 0.7 cm2 V−1 s−1 and µlin = 1.3 cm2 V−1 s−1, which are larger by two orders of magnitude than those reported for p‐channel oxide TFTs to date. On/off current ratios were ∼102 and subthreshold voltage swings (S) ∼7 V/decade. The parameters required for TFT simulations were estimated by ultraviolet PES and first‐principles calculations. The TFT simulations indicated that subgap hole trap density in the SnO channel is >1019 cm−3, which limits the TFT mobilities and the S values.

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Physica Status Solidi (A) Applications and Materials Science

Tập 206 Số 9

2187-2191

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