Jianze Zhao1,2, Hongwei Liang2, Jingchang Sun3,2,4, Qiuju Feng2, Shuoshi Li2, Jiming Bian2, Lizhong Hu2, Guotong Du2,4, Jingjian Ren1, Jianlin Liu1
1Department of Electrical Engineering, Quantum Structures Laboratory, University of California at Riverside, Riverside, California 92521, USA
2School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024, P. R. China
3School of Physics and Electronic Technology, Liaoning Normal University, Dalian, Liaoning 116029, P.R. China
4State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130023, P.R. China
Tóm tắt
AbstractSb‐doped zinc oxide (ZnO) films grown by metal organic chemical vapor deposition (MOCVD) were investigated. The influence of Sb‐doping concentration on the optical and structural properties of ZnO was investigated. The deep‐level emission was suppressed gradually by Sb doping. The grain size of ZnO was also increased by Sb doping. The reasons for improvement in optical and structural properties of ZnO thin films are also discussed.
