Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 17 Số 3 - Trang 1272-1275 - 1999
D. E. Mars, D.I. Babic, Y. Kaneko, Ying‐Lan Chang, Sudhir G. Subramanya, Jörg Krüger, P. Perlin, Eicke R. Weber
We have grown bulk GaAsN and InGaAsN quantum well laser structures using molecular beam epitaxy and an electron cyclotron resonance plasma source with N2 gas. X-ray diffraction measurements in GaAsN grown on GaAs were used to determine the concentration of N in the range of 0% to ∼2%. Room temperature photoluminescence (PL) measurements were done on quantum well test structures and half la...... hiện toàn bộ
Low frequency noise in heavily doped polysilicon thin film resistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 16 Số 4 - Trang 1881-1884 - 1998
M. Jamal Deen, Sergey Rumyantsev, J.H. Orchard-Webb
Low frequency noise and current–voltage measurements in several heavily doped polysilicon resistors of varying geometry and both p and n type, and over a limited range of temperatures from −60 to 50 °C were conducted for the first time. We found that the noise in p-type polysilicon was independent of temperature, but not the n-type polysilicon. For the p-type resistors, linear current–volt...... hiện toàn bộ
Nitridation of the GaAs (001) surface using atomic nitrogen
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 15 Số 4 - Trang 1133-1138 - 1997
Polly Hill, D. I. Westwood, L. Haworth, Jing‐Tao Lü, J. Emyr Macdonald
The effect of active nitrogen, generated by a radio frequency plasma source, on clean GaAs (001) surfaces has been examined using x-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction. The “nitridation” of the surface was performed under fixed plasma conditions, compatible with the molecular beam epitaxial growth of GaN, and as a function of both temperatur...... hiện toàn bộ
Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 23 Số 3 - Trang 1281-1285 - 2005
D. C. Oh, Tomoya Suzuki, J. J. Kim, Hisao Makino, Takashi Hanada, M. W. Cho, Takafumi Yao, J. S. Song, H. J. Ko
We have extensively studied electrical properties for ZnO layers grown on GaN templates by molecular-beam epitaxy. First, the Schottky characteristics of Au contacts onto ZnO:N layers have been investigated by current-voltage measurements. Barrier heights and ideality factors for Au/ZnO:N Schottky contacts are systematically varied by controlling the growth temperatures and crystal-polar d...... hiện toàn bộ
Underwater scanning tunneling microscopy of organic and biological molecules
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 9 Số 3 - Trang 1566-1569 - 1991
Jianxun Mou, Wenjun Sun, Junjue Yan, Wenfeng Yang, Cheng Liu, Zhonghe Zhai, Qiang Xu, Youchang Xie
With a collection of images taken with the scanning tunneling microscope from the samples of several different organic and biological molecules adsorbed on graphite and/or gold substrates and covered with a very thin layer of 50% glycerol–water solution we show that covering such samples with the solution could facilitate imaging of them and improve the quality of images thus collected, an...... hiện toàn bộ
Spatial distribution of electrically active defects in dual-layer (SiO2∕HfO2) gate dielectric n-type metal oxide semiconductor field effect transistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 27 Số 1 - Trang 329-332 - 2009
Nguyen, T., Savio, A., Militaru, L., Plossu, C.
Soft lithographic fabrication of an image sensor array on a curved substrate
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 22 Số 5 - Trang 2548-2551 - 2004
Michael H.‐C. Jin, John R. Abelson, Martin K. Erhardt, Ralph G. Nuzzo
A low magnification focused ion beam system with 8 nm spot size
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 9 Số 6 - Trang 3079-3083 - 1991
R. L. Kubena, J. W. Ward, F. P. Stratton, R. J. Joyce, Gary M. Atkinson
A 50 keV Ga+ beam has been focused to a spot diameter of 8 nm (full width at half-maximum) in our two-lens microprobe system by reducing the contributions of both chromatic aberration and the virtual ion source size to the final image size. Features as small as 6 to 8 nm were distinctly visible in scanning ion images. To our knowledge, this is the smallest focused beam of ions produced to ...... hiện toàn bộ
Effects of substrate temperature and angular position on the properties of ion beam sputter deposited Fe films on (100) GaAs substrates
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 12 Số 2 - Trang 605-612 - 1994
S. D. Bernstein, T. Y. Wong, R. W. Tustison
The effects of substrate temperature and position on the properties of Fe films deposited onto (100) GaAs substrates by ion beam sputtering were studied. Films were deposited on substrates at angular positions from −20° to 66°, with respect to the target surface normal, at temperatures from 100 to 500 °C. The deposition rate was higher in the forward scattered direction but decreased for a...... hiện toàn bộ
Đặc trưng của các hạt lượng tử InAs trong giếng lượng tử InxGa1−xAs bị căng Dịch bởi AI
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 18 Số 3 - Trang 1496-1501 - 2000
A. Stintz, G. T. Liu, A.L. Gray, Rafael Spillers, Silverio Delgado, Kevin J. Malloy
Các thuộc tính của hạt lượng tử InAs được đặt trong giếng lượng tử InGaAs căng được nghiên cứu. Cấu trúc này được lớn lên bằng phương pháp phân tử beam xạ nguồn rắn trên nền GaAs và được đặc trưng bằng quang phát quang và kính hiển vi lực nguyên tử. Bước sóng phát ra và chất lượng quang học của các hạt lượng tử thay đổi theo nhiệt độ lớn lên và cũng phụ thuộc vào vị trí của các hạt trong g...... hiện toàn bộ
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