Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Novel conductive transparent tip for low-temperature tunneling-electron luminescence microscopy using tip collection
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 15 Số 1 - Trang 32-37 - 1997
Tooru Murashita
Tip collection of luminescence is advantageous in low-temperature tunneling-electron luminescence microscopy because it can improve spatial resolution, luminescence collection yield, and thermal isolation. We have developed a novel conductive transparent (CT) tip that injects tunneling electrons into a sample and simultaneously collects tunneling-electron luminescence (TL). Essential featu...... hiện toàn bộ
Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 17 Số 3 - Trang 1272-1275 - 1999
D. E. Mars, D.I. Babic, Y. Kaneko, Ying‐Lan Chang, Sudhir G. Subramanya, Jörg Krüger, P. Perlin, Eicke R. Weber
We have grown bulk GaAsN and InGaAsN quantum well laser structures using molecular beam epitaxy and an electron cyclotron resonance plasma source with N2 gas. X-ray diffraction measurements in GaAsN grown on GaAs were used to determine the concentration of N in the range of 0% to ∼2%. Room temperature photoluminescence (PL) measurements were done on quantum well test structures and half la...... hiện toàn bộ
Low frequency noise in heavily doped polysilicon thin film resistors
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 16 Số 4 - Trang 1881-1884 - 1998
M. Jamal Deen, Sergey Rumyantsev, J.H. Orchard-Webb
Low frequency noise and current–voltage measurements in several heavily doped polysilicon resistors of varying geometry and both p and n type, and over a limited range of temperatures from −60 to 50 °C were conducted for the first time. We found that the noise in p-type polysilicon was independent of temperature, but not the n-type polysilicon. For the p-type resistors, linear current–volt...... hiện toàn bộ
Nitridation of the GaAs (001) surface using atomic nitrogen
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 15 Số 4 - Trang 1133-1138 - 1997
Polly Hill, D. I. Westwood, L. Haworth, Jing‐Tao Lü, J. Emyr Macdonald
The effect of active nitrogen, generated by a radio frequency plasma source, on clean GaAs (001) surfaces has been examined using x-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction. The “nitridation” of the surface was performed under fixed plasma conditions, compatible with the molecular beam epitaxial growth of GaN, and as a function of both temperatur...... hiện toàn bộ
Effects of nanoimprinted patterns in tissue-culture polystyrene on cell behavior
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 23 Số 6 - Trang 2984-2989 - 2005
Walter Hu, Evelyn K. F. Yim, Ronald M. Reano, Kam W. Leong, S. W. Pang
Tissue engineering seeks to develop functional tissues in a biomimetic environment in vitro. As the extracellular environment in vivo is composed of numerous nanostructures, fabrication of nanostructured substrates will be valuable for tissue engineering applications. In this article, we report a simple nanoimprint lithography (NIL) process to pattern nanostructures directly on tissue-cult...... hiện toàn bộ
Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 23 Số 3 - Trang 1281-1285 - 2005
D. C. Oh, Tomoya Suzuki, J. J. Kim, Hisao Makino, Takashi Hanada, M. W. Cho, Takafumi Yao, J. S. Song, H. J. Ko
We have extensively studied electrical properties for ZnO layers grown on GaN templates by molecular-beam epitaxy. First, the Schottky characteristics of Au contacts onto ZnO:N layers have been investigated by current-voltage measurements. Barrier heights and ideality factors for Au/ZnO:N Schottky contacts are systematically varied by controlling the growth temperatures and crystal-polar d...... hiện toàn bộ
Energy exchange processes in electron emission at high fields and temperatures
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 12 Số 2 - Trang 727-736 - 1994
M. S. Chung, P. H. Cutler, N. M. Miskovsky, T. E. Sullivan
A new more complete theory for energy exchange processes in electron emission is formulated. It is found that the tunneling contribution to the availability of vacant states is necessary to explain the replacement process occurring in the emitter region. The introduction of the tunneling states now makes it possible to obtain both the average energies of the emitted and replacement electro...... hiện toàn bộ
Underwater scanning tunneling microscopy of organic and biological molecules
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 9 Số 3 - Trang 1566-1569 - 1991
Jianxun Mou, Wenjun Sun, Junjue Yan, Wenfeng Yang, Cheng Liu, Zhonghe Zhai, Qiang Xu, Youchang Xie
With a collection of images taken with the scanning tunneling microscope from the samples of several different organic and biological molecules adsorbed on graphite and/or gold substrates and covered with a very thin layer of 50% glycerol–water solution we show that covering such samples with the solution could facilitate imaging of them and improve the quality of images thus collected, an...... hiện toàn bộ
Systematic investigations of nanostructuring by scanning tunneling microscopy
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 14 Số 1 - Trang 48-53 - 1996
Rainer Köning, Otto Jusko, Ludger Koenders, A. Schlachetzki
Scanning tunneling microscopes allow the formation of structures, by the application of voltage pulses between tip and sample whose dimensions are in the range of some nanometers. Systematic investigations have been carried out on the Si(111)-7×7 using W and Au tips in order to better understand the physics of the underlying deposition process. Therefore the voltage pulse, current, and z-p...... hiện toàn bộ
Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered Mo–Si–N/SiC thin films
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 17 Số 4 - Trang 1329-1335 - 1999
P. Torri, J. Hirvonen, H. Kung, Yiling Lu, M. Nastasi, P.N. Gibson
A study of the microstructure, thermal stability, nanoindentation mechanical properties, and residual stress evolution of nanolayered Mo–Si–N/SiC thin films as a function of vacuum annealing time and temperature is reported. Multilayers of Mo–Si–N (MoSi2.2N2.5) and SiC were deposited by magnetron sputtering from planar MoSi2 and SiC targets onto single crystal silicon wafers. The relative ...... hiện toàn bộ
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