Low frequency noise in heavily doped polysilicon thin film resistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 16 Số 4 - Trang 1881-1884 - 1998
M. Jamal Deen1, Sergey Rumyantsev1, J.H. Orchard-Webb1
1School of Engineering Science, Simon Fraser University, Vancouver, British Columbia V5A 1S6, Canada

Tóm tắt

Low frequency noise and current–voltage measurements in several heavily doped polysilicon resistors of varying geometry and both p and n type, and over a limited range of temperatures from −60 to 50 °C were conducted for the first time. We found that the noise in p-type polysilicon was independent of temperature, but not the n-type polysilicon. For the p-type resistors, linear current–voltage characteristics were observed, and the relative noise spectral density was independent of bias and inversely proportional to frequency. For the n-type resistors, linear current–voltage characteristics were observed, and the relative noise spectral density was independent of bias. Finally, the normalized noise level in the linear n-type resistors was almost an order of magnitude lower than for the p-type resistors. We believe that this difference is because n-type dopants segregate to the grain boundaries, thus passivating some of the traps there. Boron (p-type dopant), on the other hand, does not segregate to the grain boundaries, leaving more unpassivated grain-boundary traps which capture and emit more carriers, resulting in more low frequency noise.

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Thông tin xuất bản

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Tập 16 Số 4

1881-1884

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