Electrical characterization for ZnO layers grown on GaN templates by molecular-beam epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 23 Số 3 - Trang 1281-1285 - 2005
D. C. Oh1, Tomoya Suzuki1, J. J. Kim1, Hisao Makino1, Takashi Hanada1, M. W. Cho1, Takafumi Yao1, J. S. Song2, H. J. Ko3
1Tohoku University Institute for Materials Research, , Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan
2NeosemiTech Corporate , 357-13 Dangha-dong, Seo-ku, Inchon 404-30, Korea
3Korea Photonics Technology Institute Division of Technology, , Bonchon-dong 459-3, Book-koo, Kwangjoo 500-210, Korea

Tóm tắt

We have extensively studied electrical properties for ZnO layers grown on GaN templates by molecular-beam epitaxy. First, the Schottky characteristics of Au contacts onto ZnO:N layers have been investigated by current-voltage measurements. Barrier heights and ideality factors for Au/ZnO:N Schottky contacts are systematically varied by controlling the growth temperatures and crystal-polar directions of ZnO:N layers. Second, the capacitance-voltage (C-V) characteristics of ZnO/GaN heterostructures has been investigated. Large plateau regions are observed in C-V characteristics, which are ascribed to the confined charges caused by band offset at the ZnO/GaN heterointerface. Finally, electron-trap centers in ZnO layers have been investigated by capacitance-temperature measurements. ZnO layers exhibit two electron-trap centers ET1 and ET2, whose thermal activation energies are estimated to be 33 and 0.15 eV, respectively.

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Thông tin xuất bản

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Tập 23 Số 3

1281-1285

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