Nitridation of the GaAs (001) surface using atomic nitrogen

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena - Tập 15 Số 4 - Trang 1133-1138 - 1997
Polly Hill1, D. I. Westwood1, L. Haworth1, Jing‐Tao Lü1, J. Emyr Macdonald1
1Department of Physics and Astronomy, University of Wales Cardiff, Cardiff CF2 3YB, United Kingdom

Tóm tắt

The effect of active nitrogen, generated by a radio frequency plasma source, on clean GaAs (001) surfaces has been examined using x-ray photoemission spectroscopy (XPS) and reflection high energy electron diffraction. The “nitridation” of the surface was performed under fixed plasma conditions, compatible with the molecular beam epitaxial growth of GaN, and as a function of both temperature (in the range ∼300–600 °C) and time (up to 15 min). At low temperatures the nitridation proceeds very slowly and was characterized, in its initial stages, by the transformation of the (2×4) reconstructed GaAs surface to a high intensity “amorphous” haze, presumed to be related to the As released in the anion exchange reaction but not evaporated from the surface. At high temperatures the nitridation is much more aggressive readily forming thicker GaN films of a polycrystalline nature. Curve fitting of the XPS spectra, to reveal the nature of the reaction products indicated the probable formation of As–N species in addition to GaN.

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Thông tin
Thông tin xuất bản

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Tập 15 Số 4

1133-1138

Thông tin tác giả