J. N. Shenoy, G. L. Chindalore, M. R. Melloch, J. A. Cooper, J. W. Palmour, K. G. Irvine
The response time of deep-lying interface states in silicon carbide metal-oxide
semiconductor (MOS) capacitors may be thousands of years at room temperature. To
accurately measure interface state density beyond about 0.6 eV from the band
edge, it is necessary either to raise the temperature well above 300K so that
all states can follow changes in DC bias, or to utilize photoexcitation to
modulate ... hiện toàn bộ
L.P. Lehman, S. N. Athavale, Travis Z. Fullem, Andrew C Giamis, Robert Kinyanjui, Margaret Lowenstein, Katharine Mather, Raj Patel, David F. Rae, J. Wang, Yan Xing, L. Zavalij, Peter Børgesen, E. J. Cotts