Journal of Electronic Materials

Công bố khoa học tiêu biểu

* Dữ liệu chỉ mang tính chất tham khảo

Sắp xếp:  
Electron bombardment induced defect states in p-InP
Journal of Electronic Materials - Tập 12 - Trang 423-432 - 1983
M. Levinson, H. Temkin, W. A. Bonner
A deep level transient spectroscopy (DLTS) study has been made of 1 MeV electron bombardment induced defect states in the lower half band gap of LEC grown Zn doped p-InP. One state was observed in the unirradiated material with a hole emission activation energy H of 0.15 eV. Irradiation resulted in two new states with H of 0.34 and 0.58 eV, and introduction rates dNt/dϕ of 1 and 0.04 cm−1, respect...... hiện toàn bộ
Dislocation Reduction by Glide in Epitaxial IV–VI Layers on Si Substrates
Journal of Electronic Materials - Tập 41 Số 7 - Trang 1931-1935 - 2012
H. Zogg
Eggshell Waste-Derived Carbon Composite with Calcium Bismuth Oxide for Energy Storage Application
Journal of Electronic Materials - - 2023
Ramachandran John Wesley, Sowmya Subramanian, Arulappan Durairaj, Romiyo Justinabraham, Vijendran Vijaikanth, Samuel Vasanthkumar
Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy
Journal of Electronic Materials - - 2008
E.C. Piquette, D.D. Edwall, H. Arnold, A. Chen, J. Auyeung
Removal of the CdZnTe substrate offers several performance benefits for near-infrared (NIR, 1.7 μm) and short-wave infrared (SWIR, 2.5 μm) focal-plane arrays (FPAs). Among these are visible wavelength detection, improved infrared sensitivity and uniformity, and greatly reduced susceptibility to the effects of ionizing radiation. Data for substrate-removed NIR FPAs fabricated for the Wide Field Cam...... hiện toàn bộ
Analysis of Thermal Losses for a Variety of Single-Junction Photovoltaic Cells: An Interesting Means of Thermoelectric Heat Recovery
Journal of Electronic Materials - Tập 44 - Trang 1809-1813 - 2014
Bruno Lorenzi, Maurizio Acciarri, Dario Narducci
Exploitation of solar energy conversion has become a fundamental aspect of satisfying a growing demand for energy. Thus, improvement of the efficiency of conversion in photovoltaic (PV) devices is highly desirable to further promote this source. Because it is well known that the most relevant efficiency constraint, especially for single-junction solar cells, is unused heat within the device, hybri...... hiện toàn bộ
Precipitation of Silver Nanoparticles in Borate Glasses by 1064 nm Nd:YAG Nanosecond Laser Pulses: Characterization and Dielectric Studies
Journal of Electronic Materials - Tập 49 - Trang 826-832 - 2019
A. A. Menazea, A. M. Abdelghany, N. A. Hakeem, W. H. Osman, F. H. Abd El-kader
This work aims to present a modern process to synthesis nanoparticles in a glassy matrix. Borate glasses doped by silver nitrate (AgNO3) via the melt annealing technique were irradiated by a (1064 nm wavelength) Nd:YAG (Neodymium–doped Yttrium Aluminum Garnet) laser to yeild precipitation of silver nanoparticles (AgNPs) in borate glasses. The characterization of the irradiated glasses was investig...... hiện toàn bộ
Optical Properties of Rare Earth Doped SrS Phosphor: A Review
Journal of Electronic Materials - Tập 46 - Trang 687-708 - 2016
Ayush Khare, Shubhra Mishra, D. S. Kshatri, Sanjay Tiwari
Rare earth (RE) doped SrS phosphor has attracted a lot of attention on a wide range of photo-, cathodo-, thermo-, and electroluminescent applications. Upon doping with different RE elements (e.g., Ce, Pr, Eu, Yb), the luminescence from SrS can be varied over the entire visible region by appropriately choosing the composition of the strontium sulfide host. The main applications include flat panel d...... hiện toàn bộ
Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications
Journal of Electronic Materials - Tập 26 - Trang 212-216 - 1997
C. C. Tin, Y. Song, T. Isaacs Smith, V. Madangakli, T. S. Sudarshan
Aluminum nitride is a promising insulator for the fabrication of 6H-silicon carbide (6H-SiC) metal-insulator-semiconductor (MIS) devices for high temperature and high power applications. Due to the fact that the electrical response of a Au/AlN/SiC MIS structure is sensitive to the quality of the insulator-semiconductor interface as well as the insulator itself, growth of AlN on 6H-SiC using differ...... hiện toàn bộ
Modulation Transfer Function Measurements by Electron-Beam-Induced Current of HgCdTe Planar Diode with Small Pitch and High Operating Temperature
Journal of Electronic Materials - - 2023
Samantha Bustillos Vasco, N. Baier, C. Lobre, G. Lasfarges, O. Gravrand
A Highly Enhanced Photoluminescence of Eu3+-Activated CaTiO3 Phosphors via Selective A-Site and B-Site Cation Substitutions (Sr2+ and Sn4+)
Journal of Electronic Materials - Tập 49 - Trang 1969-1979 - 2019
Xinyi Chen, Yudong Xu, Caiyue Zhao, Lei Wang, Shuyu Wen, Yulin Shi, Qing Xia, Min Shi, Yimiao Chu, Fang Li, Fan Chen, Kai Liu
Sr2+ and Sn4+ doped CaTiO3:Eu3+ phosphors were prepared by a high temperature solid-state method. X-ray diffraction characterization shows that the sample calcined at 1200°C is pure and has an orthorhombic crystal lattice. Photoluminescence (PL) measurement shows that CaTiO3:Eu3+ has five excitation peaks at 363 nm, 381 nm, 398 nm, 418 nm, and 466 nm, respectively corresponding to the transitions ...... hiện toàn bộ
Tổng số: 10,922   
  • 1
  • 2
  • 3
  • 4
  • 5
  • 6
  • 10