Metalorganic chemical vapor deposition- grown AIN on 6H-SiC for metal-insulator-semiconductor device applications
Tóm tắt
Aluminum nitride is a promising insulator for the fabrication of 6H-silicon carbide (6H-SiC) metal-insulator-semiconductor (MIS) devices for high temperature and high power applications. Due to the fact that the electrical response of a Au/AlN/SiC MIS structure is sensitive to the quality of the insulator-semiconductor interface as well as the insulator itself, growth of AlN on 6H-SiC using different growth procedures will produce AlN/6H-SiC structures of different electrical characteristics. In this study, we compared the capacitance-voltage, dc current voltage and high electric field breakdown characteristics of various AlN/6H-SiC MIS structures grown by different low-pressure metalorganic chemical vapor deposition growth procedures. Our results demonstrated that depending on the growth procedure, Au/AlN/SiC MIS structures with low current leakage, low interface state density, good high temperature stability and high electric field breakdown voltage could be obtained.
Tài liệu tham khảo
J.N. Shenoy, G.L. Chindalore, M.R. Melloch, J.A. Cooper,Jr., J.W. Palmour and K.G. Irvine, J. Electron. Mater. 24, 303 (1995).
L.A. Lipkin and J.W. Palmour, J. Electron. Mater. 25, 909 (1996).
S. Sridevan, V. Misra, P.K. McLarty, B.J. Baliga and J.J. Wortman, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 645.
J.N. Shenoy, M.K. Das, G.L. Chindalore, J.A. Cooper, Jr., M.R. Melloch, J.W. Palmour and K.G. Irvine, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 745.
C.I. Harris, M.O. Aboelfotoh, R.S. Kern, S. Tanaka and R.F. Davis, Inst. Phys. Conf. Ser. 142, (Bristol: IOP, 1996), p. 777.
C.M. Zetterling, K. Wongchotigul, M.G. Spencer, C.I. Harris, S.S. Wong and M. Ostling, Mater. Res. Soc. Symp. Proc. 423, (Pittsburgh, PA: Mater. Res. Soc, 1996),p. 667.
J.B. Casady, R.W. Johnson, C.D. Ellis, R. Hu, C.C. Tin, T. Isaacs-Smith, W.C. Neely and T. Kwasigroh, Proc Third Intl. High Temperature Electronics Conf, Albuquerque, NM, (1996), p. IX-27.
C.C. Tin, R. Hu, R.L. Coston and J. Park, J. Cryst. Growth 148, 116 (1995).
T.S. Sudarshan,V.P. Madangarli, G. Gradinaru, C.C. Tin, R. Hu and T. Isaacs-Smith, Mater. Res. Soc. Symp. Proc. 423, (Pittsburgh, PA: Mater. Res. Soc, 1996), p. 99.