Dislocation Reduction by Glide in Epitaxial IV–VI Layers on Si Substrates
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G. Badano, P. Gergaud, I.C. Robin, X. Baudry, B. Amstatt, and Fréderique. Gemain, J. Electron. Mater. 39, 908 (2010).
J.D. Benson, S. Farrell, G. Brill, Y. Chen, P.S. Wijewarnasuriya, L.O. Bubulac, P.J. Smith, R.N. Jacobs, J.K. Markunas, M. Jaime-Vasquez, L.A. Almeida, A. Stoltz, U. Lee, M.F. Vilela, J. Peterson, S.M. Johnson, D.D. Lofgreen, D. Rhiger, E.A. Patten, and P.M. Goetz, J. Electron. Mater. 40, 1847 (2011).
S. Farrell, G. Brill, Y.P. Chen, P.S. Wijewarnasuriya, M.V. Rao, N. Dhar, and K. Harris, J. Electron. Mater. 39, 43 (2010).
P. Müller, H. Zogg, A. Fach, J. John, C. Paglino, A.N. Tiwari, M. Krejci, and G. Kostorz, Phys. Rev. Lett. 78, 3007 (1997).
H. Zogg, K. Alchalabi, and D. Gössi, Proc. 9th Int. Conf. on Narrow Gap Semiconductors (NG9), ed. N. Puhlmann, H.-U.Müller, and M. von Ortenberg (Humboldt University at Berlin, Germany, 1999).
H. Zogg and J. John, Opto-Electron. Rev. 6, 37 (1998).
H. Zogg, S. Blunier, A. Fach, C. Maissen, P. Müller, S. Teodoropol, V. Meyer, G. Kostorz, A. Dommann, and T. Richmond, Phys. Rev. B 50, 10801 (1994).
P. Müller (Ph.D. thesis, ETH Nr. 12011, 1997).
G. Wang, R. Loo, E. Simoen, L. Souriau, M. Caymax, M.M. Heyns, and B. Blanpain, Appl. Phys. Lett. 94, 102115 (2009).
H. Zogg, M. Arnold, F. Felder, M. Rahim, C. Ebneter, I. Zasavitskiy, N. Quack, S. Blunier, and J. Dual, J. Electron. Mater. 37, 1497 (2008).
J. Nurnus, J. John, and H. Griessmann, Proceedings 4th European Workshop on Thermoelectrics (Madrid, 1998).