A monolithic field emitter array with a JFETIEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1665-1668 - 2002
H. Shimawaki, K. Tajima, H. Mimura, K. Yokoo
This paper proposes a novel structure of the conical Si field emitters monolithically incorporating a vertical-type junction field effect transistor (JFET) and demonstrates the emission control in field emission from the emitters. The proposal has many attractive advantages in the display application and reliable fabrication, because the structure needs neither additional area for the JFET nor add...... hiện toàn bộ
#Silicon #Vacuum microelectronics #Arrays #Electron emission #JFETs #Stability
Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETsIEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1669-1671 - 2002
M.M.A. Hakim, A. Haque
We investigate the validity of the assumption of neglecting carrier tunneling effects on the self-consistent electrostatic potential in calculating the direct tunneling gate current in deep submicron MOSFETs. A comparison between simulated and experimental results shows that for accurate modeling of direct tunneling current, tunneling effects on potential profile need to be considered. The relativ...... hiện toàn bộ
#MOSFETs #Tunneling #Semiconductor device modeling #Voltage #Dielectric films
SILC dynamics in MOS structures subject to periodic stressIEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1729-1735 - 2002
F. Irrera, B. Ricco
This work investigates stress-induced leakage current (SILC) in thin-oxide MOS capacitors subject to (quasiperiodic) ac voltage stress, under the condition of fixed charge fluence through the oxide. It shows that both trap creation and spontaneous trap annealing play a significant role when the duration of, and the time between, high-voltage pulses are comparable with characteristic times of trap ...... hiện toàn bộ
#MOS capacitors #Leakage currents #Semiconductor device reliability #Semiconductor device modeling #Interface phenomena #EPROM
Oxynitridation using radical-oxygen and -nitrogen for high-performance and highly reliable n/pFETsIEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1761-1767 - 2002
M. Togo, K. Watanabe, M. Terai, S. Kimura, T. Yamamoto, T. Tatsumi, T. Mogami
We report the importance of oxynitridation using radical-oxygen and -nitrogen to form a low-leakage and highly reliable 1.6-nm SiON gate-dielectric without performance degradation in n/pFETs. It was found that oxidation using radical-oxygen forms high-density 1.6-nm SiO/sub 2/, which is ten times more reliable than low-density SiO/sub 2/ formed by oxygen-ions in n/pFETs and is suitable for the bas...... hiện toàn bộ
#Silicon compounds #Surface treatment #Oxidation #MOSFETs #Semiconductor device reliability #Leakage currents #Dielectric films
Noise source modeling for cyclostationary noise analysis in large-signal device operationIEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1640-1647 - 2002
F. Bonani, S.D. Guerrieri, G. Ghione
Starting from the analysis of fundamental noise sources in large-signal (LS) periodic operation, a system theory approach is proposed for the modeling of colored noise sources in devices and circuits driven in LS conditions. According to this interpretation, colored sources are generated by low-pass filtering and amplitude modulation of a white unit Gaussian process. The order of the modulation an...... hiện toàn bộ
#Semiconductor device noise #Semiconductor device modeling #Current density #White noise #Gaussian noise #Random noise #Superconducting microwave devices
High-speed current limitersIEEE Transactions on Electron Devices - Tập ED-13 Số 12 - Trang 904-907 - 1966
H.J. Boll, J.E. Iwersen, E.W. Perry