IEEE Transactions on Electron Devices
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Dopant emission mechanism and the effects of host materials on the behavior of doped organic light-emitting diodes
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1540-1544 - 2002
Organic light-emitting diodes made of tris-8-(hydroxyquinoline) aluminum as the electron-transport layers, N, N'-diphenyl-N, N' bis (3-methylphenyl)-1, 1'-biphenyl-4,4'-diamine (TPD) as the hole-transport layers, and 2-1, 1-dimethylethyl-62-2, 3, 6, 7-tetrahydro-1, 1, 7, 7-tetramethyl-1H, 5H-benzo(ij) quinolizin-9-yl ethenyl-4H-pyran-4-ylidene propanedinitrile (DCJTB) as the guest dopant have been...... hiện toàn bộ
#Light-emitting diodes #Charge carrier lifetime #Electroluminescence
A monolithic field emitter array with a JFET
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1665-1668 - 2002
This paper proposes a novel structure of the conical Si field emitters monolithically incorporating a vertical-type junction field effect transistor (JFET) and demonstrates the emission control in field emission from the emitters. The proposal has many attractive advantages in the display application and reliable fabrication, because the structure needs neither additional area for the JFET nor add...... hiện toàn bộ
#Silicon #Vacuum microelectronics #Arrays #Electron emission #JFETs #Stability
Theoretical comparison of SiC PiN and Schottky diodes based on power dissipation considerations
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1657-1664 - 2002
In order to select the optimal device for a particular application, designers must carefully analyze the tradeoffs between competing devices. Recent progress in SiC power rectifiers has resulted in the demonstration of high-voltage PiN and Schottky barrier diodes (SBDs). With both technologies maturing, power electronics engineers will soon face the task of selecting between these two devices. Unt...... hiện toàn bộ
#Silicon compounds #Schottky diodes #p-i-n diodes #Solid state rectifiers #Power semiconductor diodes #Current density #Charge carrier lifetime
Analysis on Trapping Kinetics of Stress-Induced Trapped Holes in Gate Dielectric of Amorphous HfInZnO TFT
IEEE Transactions on Electron Devices - Tập 63 Số 6 - Trang 2398-2404 - 2016
A new 50-nm nMOSFET with side-gates for virtual source-drain extensions
IEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1833-1835 - 2002
We have proposed and fabricated a novel 50-nm nMOSFET with side-gates, which induce inversion layers for virtual source/drain extensions (SDE). The 50-nm nMOSFETs show excellent suppression of the short channel effect and reasonable current drivability [subthreshold swing of 86 mV/decade, drain-induced barrier lowering (DIBL) of 112 mV, and maximum transconductance (g/sub m/) of 470 /spl mu/S//spl...... hiện toàn bộ
#MOSFETs #Inversion layers
The microthyristor could be a promising microelectronics device
IEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1821-1825 - 2002
In this paper, a new microthyristor structure suitable for microelectronics applications has been introduced. A suitable technology for its implementation has been chosen. The microthyristor has been designed and its performance has been simulated. The device showed superior performance concerning the switching times and the power dissipation in addition to controllability of its S-curve. During t...... hiện toàn bộ
#Thyristors #Silicon on insulator technology #SPICE #Semiconductor device modeling #Isolation technology
30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs
IEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1694-1700 - 2002
Two-step recess gate technology has been developed for sub-100-nm gate InP-based InAlAs/InGaAs high-electron mobility transistors (HEMTs). This gate structure is found to be advantageous for the preciseness of the metallurgical gate length as well as a comparable stability to the conventional gate structure with an InP etch stop layer. The two-step recess gate is optimized focusing on the lateral ...... hiện toàn bộ
#Indium compounds #Aluminum compounds #Gallium compounds #MODFETs #Millimeter wave FETs #Leakage currents
Channel engineering for analog device design in deep submicron CMOS technology for system on chip applications
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1558-1565 - 2002
Scaling of analog CMOS in the deep submicron regime is challenging, particularly for mixed mode system on chip applications due to the tradeoff in design requirements for analog and digital applications. The conventional approach employing aggressive gate oxide and S/D junction scaling to suppress the two-dimensional (2-D) electrostatic coupling and related short channel effects that degrade the d...... hiện toàn bộ
#CMOS integrated circuits #Integrated circuit design #Mixed analog-digital integrated circuits #Very-large-scale integration #Integrated circuit fabrication
Oxynitridation using radical-oxygen and -nitrogen for high-performance and highly reliable n/pFETs
IEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1761-1767 - 2002
We report the importance of oxynitridation using radical-oxygen and -nitrogen to form a low-leakage and highly reliable 1.6-nm SiON gate-dielectric without performance degradation in n/pFETs. It was found that oxidation using radical-oxygen forms high-density 1.6-nm SiO/sub 2/, which is ten times more reliable than low-density SiO/sub 2/ formed by oxygen-ions in n/pFETs and is suitable for the bas...... hiện toàn bộ
#Silicon compounds #Surface treatment #Oxidation #MOSFETs #Semiconductor device reliability #Leakage currents #Dielectric films
Device modeling of ferroelectric memory field-effect transistor (FeMFET)
IEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1790-1798 - 2002
A numerical analysis of the electrical characteristics for the ferroelectric memory field-effect transistors (FeMFETs) is presented. Two important structures such as the metal-ferroelectric-insulator-semiconductor field-effect transistor (MFISFET) and metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMISFET) are considered. A new analytic expression for the relation of p...... hiện toàn bộ
#Ferroelectric memories #MISFETs #Dielectric hysteresis #Dielectric polarization #Semiconductor device modeling #Space charge #Numerical analysis #Ferroelectric capacitors
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