IEEE Transactions on Electron Devices
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A monolithic field emitter array with a JFET
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1665-1668 - 2002
This paper proposes a novel structure of the conical Si field emitters
monolithically incorporating a vertical-type junction field effect transistor
(JFET) and demonstrates the emission control in field emission from the
emitters. The proposal has many attractive advantages in the display application
and reliable fabrication, because the structure needs neither additional area
for the JFET nor add...
#Silicon #Vacuum microelectronics #Arrays #Electron emission #JFETs #Stability
Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1669-1671 - 2002
We investigate the validity of the assumption of neglecting carrier tunneling
effects on the self-consistent electrostatic potential in calculating the direct
tunneling gate current in deep submicron MOSFETs. A comparison between simulated
and experimental results shows that for accurate modeling of direct tunneling
current, tunneling effects on potential profile need to be considered. The
relativ...
#MOSFETs #Tunneling #Semiconductor device modeling #Voltage #Dielectric films
The effect of backgating on the design and performance of GaAs digital integrated circuits
IEEE Transactions on Electron Devices - Tập 29 Số 7 - Trang 1135-1142 - 1982
SILC dynamics in MOS structures subject to periodic stress
IEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1729-1735 - 2002
This work investigates stress-induced leakage current (SILC) in thin-oxide MOS
capacitors subject to (quasiperiodic) ac voltage stress, under the condition of
fixed charge fluence through the oxide. It shows that both trap creation and
spontaneous trap annealing play a significant role when the duration of, and the
time between, high-voltage pulses are comparable with characteristic times of
trap ...
#MOS capacitors #Leakage currents #Semiconductor device reliability #Semiconductor device modeling #Interface phenomena #EPROM
Oxynitridation using radical-oxygen and -nitrogen for high-performance and highly reliable n/pFETs
IEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1761-1767 - 2002
We report the importance of oxynitridation using radical-oxygen and -nitrogen to
form a low-leakage and highly reliable 1.6-nm SiON gate-dielectric without
performance degradation in n/pFETs. It was found that oxidation using
radical-oxygen forms high-density 1.6-nm SiO/sub 2/, which is ten times more
reliable than low-density SiO/sub 2/ formed by oxygen-ions in n/pFETs and is
suitable for the bas...
#Silicon compounds #Surface treatment #Oxidation #MOSFETs #Semiconductor device reliability #Leakage currents #Dielectric films
Noise source modeling for cyclostationary noise analysis in large-signal device operation
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1640-1647 - 2002
Starting from the analysis of fundamental noise sources in large-signal (LS)
periodic operation, a system theory approach is proposed for the modeling of
colored noise sources in devices and circuits driven in LS conditions. According
to this interpretation, colored sources are generated by low-pass filtering and
amplitude modulation of a white unit Gaussian process. The order of the
modulation an...
#Semiconductor device noise #Semiconductor device modeling #Current density #White noise #Gaussian noise #Random noise #Superconducting microwave devices
Ballistic transport in semiconductor at low temperatures for low-power high-speed logic
IEEE Transactions on Electron Devices - Tập 26 Số 11 - Trang 1677-1683 - 1979
The potential and electric field at the metallurgical boundary of an abrupt p-n semiconductor junction
IEEE Transactions on Electron Devices - Tập 22 Số 11 - Trang 988-994 - 1975
High-speed current limiters
IEEE Transactions on Electron Devices - Tập ED-13 Số 12 - Trang 904-907 - 1966
Series resistance of self-aligned silicided source/drain structure
IEEE Transactions on Electron Devices - Tập 40 Số 1 - Trang 197-206 - 1993
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