IEEE Transactions on Electron Devices

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Characterization of a-Si:H and a-SiGe:H p-i-n and Schottky junctions by admittance circuit modeling
IEEE Transactions on Electron Devices - Tập 39 Số 10 - Trang 2368-2376 - 1992
Steven Hegedus, E. A. Fagen
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon
IEEE Transactions on Electron Devices - Tập 54 Số 9 - Trang 2183-2190 - 2007
E. Ungersboeck, S. Dhar, Gerhard Karlowatz, Viktor Sverdlov, H. Kosina, S. Selberherr
A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs
IEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1807-1813 - 2002
Qingqing Liang, J.D. Cressler, Guofu Niu, R.M. Malladi, K. Newton, D.L. Harame
A physics-based cutoff frequency model considering high-injection heterojunction barrier effects in SiGe HBTs is derived. Compared with other compact modeling approaches, the present model accurately captures the cutoff frequency behavior at very high current densities for SiGe HBTs with deep Si-SiGe heterojunctions. The model also offers better insight into the charge density distribution under K...... hiện toàn bộ
#Germanium alloys #Silicon alloys #Heterojunction bipolar transistors #Microwave bipolar transistors #Semiconductor device modeling #Current density #Charge carrier mobility #Charge carrier density #Semiconductor materials
Analytical Modeling of High-Frequency Noise Including Temperature Effects in GaN HEMTs on High-Resistivity Si Substrates
IEEE Transactions on Electron Devices - Tập 57 Số 7 - Trang 1485-1491 - 2010
Fei Liu, Geok Ing Ng, S. Arulkumaran
Spectroscopic studies of ZnSe grown by liquid phase epitaxy
IEEE Transactions on Electron Devices - Tập 28 Số 4 - Trang 440-444 - 1981
Brian Fitzpatrick, C. Werkhoven, Thomas McGee, P. M. Harnack, S. P. Herko, R. N. Bhargava, P. Dean
Rare-earth-doped GaN switchable color electroluminescent devices
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1545-1551 - 2002
J. Heikenfeld, A.J. Steckl
Switchable color (SC) light emission has been obtained from thin-film electroluminescent devices (ELDs) which use green Er- and red Eu-doped GaN phosphors. These two-electrode SCELDs can switch color through variation of applied bias. Different SCELD structures, which share in common a stacked GaN: Er/GaN: Eu phosphor layer, can be implemented for use with DC or AC operation. A single SCELD can em...... hiện toàn bộ
#Gallium compounds #Erbium #Europium #Electrooptic switches #Electroluminescent devices #Flat panel displays #Thin film devices
A New Quasi-2-D Threshold Voltage Model for Short-Channel Junctionless Cylindrical Surrounding Gate (JLCSG) MOSFETs
IEEE Transactions on Electron Devices - Tập 59 Số 11 - Trang 3127-3129 - 2012
Te‐Kuang Chiang
Junctionless Multiple-Gate Transistors for Analog Applications
IEEE Transactions on Electron Devices - Tập 58 Số 8 - Trang 2511-2519 - 2011
Rodrigo T. Doria, Marcelo Antonio Pavanello, Renan Trevisoli, Michelly de Souza, Chi‐Woo Lee, Isabelle Ferain, Nima Dehdashti Akhavan, Ran Yan, Pedram Razavi, Ran Yu, Abhinav Kranti, Jean-Pierre Colinge
RF Performance and Small-Signal Parameter Extraction of Junctionless Silicon Nanowire MOSFETs
IEEE Transactions on Electron Devices - Tập 58 Số 5 - Trang 1388-1396 - 2011
Seongjae Cho, Kyung Rok Kim, Byung‐Gook Park, In Man Kang
Design of Poly-Si Junctionless Fin-Channel FET With Quantum-Mechanical Drift-Diffusion Models for Sub-10-nm Technology Nodes
IEEE Transactions on Electron Devices - Tập 63 Số 12 - Trang 4610-4616 - 2016
Junsoo Lee, Young‐Min Kim, Seongjae Cho
Tổng số: 247   
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