IEEE Transactions on Electron Devices

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Effects of neglecting carrier tunneling on electrostatic potential in calculating direct tunneling gate current in deep submicron MOSFETs
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1669-1671 - 2002
M.M.A. Hakim, A. Haque
We investigate the validity of the assumption of neglecting carrier tunneling effects on the self-consistent electrostatic potential in calculating the direct tunneling gate current in deep submicron MOSFETs. A comparison between simulated and experimental results shows that for accurate modeling of direct tunneling current, tunneling effects on potential profile need to be considered. The relativ...... hiện toàn bộ
#MOSFETs #Tunneling #Semiconductor device modeling #Voltage #Dielectric films
The effect of backgating on the design and performance of GaAs digital integrated circuits
IEEE Transactions on Electron Devices - Tập 29 Số 7 - Trang 1135-1142 - 1982
M.S. Birrittella, W.C. Seelbach, H. Goronkin
Noise source modeling for cyclostationary noise analysis in large-signal device operation
IEEE Transactions on Electron Devices - Tập 49 Số 9 - Trang 1640-1647 - 2002
F. Bonani, S.D. Guerrieri, G. Ghione
Starting from the analysis of fundamental noise sources in large-signal (LS) periodic operation, a system theory approach is proposed for the modeling of colored noise sources in devices and circuits driven in LS conditions. According to this interpretation, colored sources are generated by low-pass filtering and amplitude modulation of a white unit Gaussian process. The order of the modulation an...... hiện toàn bộ
#Semiconductor device noise #Semiconductor device modeling #Current density #White noise #Gaussian noise #Random noise #Superconducting microwave devices
High-speed current limiters
IEEE Transactions on Electron Devices - Tập ED-13 Số 12 - Trang 904-907 - 1966
H.J. Boll, J.E. Iwersen, E.W. Perry
1/f noise sources
IEEE Transactions on Electron Devices - Tập 41 Số 11 - Trang 1926-1935 - 1994
F.N. Hooge
Frequency-dependent capacitance-voltage characteristics for amorphous silicon-based metal-insulator-semiconductor structures
IEEE Transactions on Electron Devices - Tập 39 Số 11 - Trang 2515-2522 - 1992
Jae Gu Choi, G.W. Neudeck
Characterization of a-Si:H and a-SiGe:H p-i-n and Schottky junctions by admittance circuit modeling
IEEE Transactions on Electron Devices - Tập 39 Số 10 - Trang 2368-2376 - 1992
Steven Hegedus, E. A. Fagen
Graded channel FET's: Improved linearity and noise figure
IEEE Transactions on Electron Devices - Tập 25 Số 6 - Trang 600-605 - 1978
Robert E. Williams, Don W. Shaw
High voltage 6H-SiC rectifiers: prospects and progress
IEEE Transactions on Electron Devices - Tập 40 Số 11 - Trang 2130 - 1993
Philip G. Neudeck, David Larkin, J. A. Powell, L. G. Matus
The Effect of General Strain on the Band Structure and Electron Mobility of Silicon
IEEE Transactions on Electron Devices - Tập 54 Số 9 - Trang 2183-2190 - 2007
E. Ungersboeck, S. Dhar, Gerhard Karlowatz, Viktor Sverdlov, H. Kosina, S. Selberherr
Tổng số: 247   
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