A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs
Tóm tắt
A physics-based cutoff frequency model considering high-injection heterojunction barrier effects in SiGe HBTs is derived. Compared with other compact modeling approaches, the present model accurately captures the cutoff frequency behavior at very high current densities for SiGe HBTs with deep Si-SiGe heterojunctions. The model also offers better insight into the charge density distribution under Kirk and barrier effect in SiGe HBTs.
Từ khóa
#Germanium alloys #Silicon alloys #Heterojunction bipolar transistors #Microwave bipolar transistors #Semiconductor device modeling #Current density #Charge carrier mobility #Charge carrier density #Semiconductor materialsTài liệu tham khảo
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