Characterization of a-Si:H and a-SiGe:H p-i-n and Schottky junctions by admittance circuit modeling

wellerand, 1989, Mater Res Soc Symp Proc, 149, 339, 10.1557/PROC-149-339

von roedern, 1985, Mater Res Soc Symp Proc, 49, 167, 10.1557/PROC-49-167

10.1063/1.100330

10.1063/1.333941

pawlikiewicz, 1988, Mater Res Soc Symp Proc, 118, 599, 10.1557/PROC-118-599

10.1063/1.341751

10.1063/1.350444

10.1080/09500838908214784

10.1016/0022-3093(87)90349-8

fortmann, 1991, Solar Cells, 31, 251

10.1063/1.104658

10.1016/0379-6787(89)90042-2

10.1103/PhysRevB.25.5321

10.1088/0268-1242/5/8/015

10.1016/0022-3093(85)90001-8

10.1063/1.335891

10.1063/1.342890

10.1103/PhysRevB.25.5285

lahri, 1982, potential distributions in metal—semiconductor and p-i-n structures on a-si:h by capacitive techniques, IEEE Transactions on Electron Devices, 29, 889, 10.1109/T-ED.1982.20795

10.1103/PhysRevB.36.2645

10.1063/1.98592

hegedus, 1989, Proc 20th IEEE Photovoltaic Specialists Conf, 129

cohen, 1984, Semiconductors and Semimetals Hydrogenated Amorphous Silicon, 9

10.1063/1.329771

10.1016/0022-3093(89)90151-8

10.1063/1.95218

10.1080/01418637908226488

hegedus, 1990

10.1063/1.336097

10.1063/1.332580

10.1063/1.331968

dalal, 1980, Proc 14th IEEE Photovoltaic Specialists Conf, 1066

10.1063/1.321865

1989, IEEE Trans Electron Devices, 36

10.1063/1.344991

10.1063/1.97430

10.1109/PVSC.1990.111857

10.1063/1.345340

aljishi, 1988, Advances in Amorphous Semiconductors, 887

10.1063/1.340414

10.1080/13642812.1983.10590676

10.1063/1.102164