All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3 Tập 9 Số 9 - Trang 091101 - 2016
Yoshihiro Kokubun, Shohei Kubo, Shinji Nakagomi
Abstract NiO/β-Ga2O3 all-oxide p–n heterojunction diodes were fabricated for the
first time using p-type NiO epitaxial layers grown on n-type β-Ga2O3 substrates.
The fabricated diodes exhibited good rectifying current–voltage characteristics,
with a rectifying ratio greater than 108 at ±3 V. The capacitance–voltage
measurements showed that the built-in voltage was 1.4 V. These results were
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