All-oxide p–n heterojunction diodes comprising p-type NiO and n-type β-Ga2O3

Applied Physics Express - Tập 9 Số 9 - Trang 091101 - 2016
Yoshihiro Kokubun1, Shohei Kubo1, Shinji Nakagomi1
1Department of Information Technology and Electronics, Faculty of Science and Engineering, Ishinomaki Senshu University, Ishinomaki, Miyagi 986-8580, Japan

Tóm tắt

Abstract NiO/β-Ga2O3 all-oxide p–n heterojunction diodes were fabricated for the first time using p-type NiO epitaxial layers grown on n-type β-Ga2O3 substrates. The fabricated diodes exhibited good rectifying current–voltage characteristics, with a rectifying ratio greater than 108 at ±3 V. The capacitance–voltage measurements showed that the built-in voltage was 1.4 V. These results were discussed in terms of the energy band diagram of a type-II heterojunction, where the conduction band and valence band discontinuities were estimated to be 2.2 and 3.4 eV, respectively.

Từ khóa


Tài liệu tham khảo

Kokubun, 2007, Appl. Phys. Lett., 90, 10.1063/1.2432946

Oshima, 2008, Appl. Phys. Express, 1, 10.1143/APEX.1.011202

Suzuki, 2009, Appl. Phys. Lett., 94, 10.1063/1.3147197

Suzuki, 2011, Appl. Phys. Lett., 98, 10.1063/1.3574911

Oshima, 2009, Jpn. J. Appl. Phys., 48, 10.1143/JJAP.48.011605

Higashiwaki, 2012, Appl. Phys. Lett., 100, 10.1063/1.3674287

Sasaki, 2013, J. Cryst. Growth, 378, 591, 10.1016/j.jcrysgro.2013.02.015

Higashiwaki, 2013, Appl. Phys. Lett., 103, 10.1063/1.4821858

Xi, 2008, Appl. Phys. Lett., 92, 10.1063/1.2898505

Ohta, 2003, Thin Solid Films, 445, 317, 10.1016/S0040-6090(03)01178-7

Warasawa, 2013, Jpn. J. Appl. Phys., 52, 10.7567/JJAP.52.021102

Kawade, 2014, J. Appl. Phys., 116, 10.1063/1.4900737

Nakagomi, 2016, J. Cryst. Growth, 445, 73, 10.1016/j.jcrysgro.2016.04.023

Ohira, 2006, Thin Solid Films, 496, 53, 10.1016/j.tsf.2005.08.230

Kokubun, 2016, Thin Solid Films, 601, 76, 10.1016/j.tsf.2015.09.058

Milnes, 1972

Hoeneisen, 1971, Solid-State Electron., 14, 1057, 10.1016/0038-1101(71)90176-6

You, 2006, Appl. Phys. Lett., 89, 10.1063/1.2392991

Mohamed, 2012, Appl. Phys. Lett., 101, 10.1063/1.4755770

He, 2006, Phys. Rev. B, 74, 10.1103/PhysRevB.74.195123

Choi, 1986, J. Mater. Sci., 21, 1947, 10.1007/BF00547931

Dolega, 1963, Z. Naturforsch., 18, 653, 10.1515/zna-1963-0518

Grundmann, 2014, ACS Appl. Mater. Interfaces, 6, 14785, 10.1021/am504454g

Thông tin
Thông tin xuất bản

Applied Physics Express

Tập 9 Số 9

091101

Thông tin tác giả