Symposium 1989 on VLSI Circuits

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A circuit design to suppress asymmetrical characteristics in 16-Mbit DRAM sense amplifier
Symposium 1989 on VLSI Circuits - - 1989
Yamauchi, Yabu, Yamada, Inoue
Recently, l6-Mbit DRAMS have been designed and fabricated using submicron CMOS technology. However, the submicron MOSFETs with LDD or Efficient Punch through Stop (EPS) structure 111 have serious problems-such as 1) the drain current asymmetry, 2) the threshold voltage difference , and 3) the gate/source capacitance imbalance.
#Logic gates #Transistors #Sensitivity #Random access memory #MOSFET #Threshold voltage #Circuit synthesis
A low power time-multiplexed SC speech spectrum analyzer
Symposium 1989 on VLSI Circuits - - 1989
Chang, Tong
A Low Power Time-Multiplexed Switched Capacitor Speech Spectrum Analyzer embodying several novel circuit designs is described. Expressions for errors that limit the accuracy of the running spectrum an derived. A four channel speech spectrum analyzer has been fabricated
#Filter banks #Operational amplifiers #Semiconductor device measurement #Hardware #Speech recognition #Frequency measurement #Clocks
A novel memory cell architecture for high-density DRAMs
Symposium 1989 on VLSI Circuits - - 1989
Ohta, Mimoto, Torimaru, Miyake
Constant efforts have been made to reduce the number of elements used for memory cell in high density DRAMs. However, despite these efforts, the 2-element cell (1 transistor and 1 capacitor per bit) has been widely used since 1970's(Reference [1]).
#Computer architecture #Microprocessors #Sensors #Vertical cavity surface emitting lasers #Random access memory #Clocks #Nickel
An on-chip smart memory for a data flow CPU
Symposium 1989 on VLSI Circuits - - 1989
Uvieghara, Nakagome, Jeong, Hodges
Register Alias Table (RAT) is an on-chip Smart memory for HPSm . a Berkeley data Row CPU. It is a multiport memory that has content addressability, support for branch prediction and exception handling in addition to conventional read and write operations. It is implemented in a 1.6μ double metal CMOS process. This memory performs 15 operations within a cycle time of 1031s. has 34,658 transistors, ...... hiện toàn bộ
#Radio access technologies #Central Processing Unit #Decoding #System-on-chip #Random access memory #Out of order #Writing
Một SRAM không nhạy cảm với /spl alpha/, sử dụng nguồn cung cấp 2V và tế bào tải PMOS polysilicon Dịch bởi AI
Symposium 1989 on VLSI Circuits - - 1989
Ishibashi, Yamanaka, Shimohigashi
Khi chiều dài cổng của MOSFET được thu nhỏ xuống dưới mức vi mô sâu (~1 lần), điện áp cung cấp phải được giảm do các vấn đề như nóng OBPPI~P và/hoặc phát thải công suất. Các yếu tố giới hạn việc giảm điện áp cung cấp trong Swude sử dụng tế bào tải trở cao (high-R os111) là lỗi mft do hạt gây ra và sự ổn định điện trong quá trình đọc và ghi. Mặc dù các CWS đầy đủ os118 ổn định cho các hoạt động với...... hiện toàn bộ
#Stability analysis #Thermal stability #MOSFET circuits #MOSFET #Leakage currents #Random access memory #Error analysis
RAM video 8Mb 50MHz với bộ khuếch đại cảm biến điều khiển theo chiều cột Dịch bởi AI
Symposium 1989 on VLSI Circuits - - 1989
Kotani, Akarnatsu, Matsushima, Okada, Shiragasawa, Houma, Yamada, Inoue
Gần đây, chất lượng hình ảnh cao hơn trở nên thiết yếu đối với TV, VCR và hệ thống hiển thị đồ họa. Từ quan điểm này, bộ nhớ trường hoặc bộ nhớ khung đã được phát triển như một phần tử trì hoãn cho xử lý tín hiệu video kỹ thuật số, chẳng hạn như RAM video IMb (VRAMYII). Tuy nhiên, để đạt được hệ thống B với chi phí thấp và hiệu suất cao, một hệ thống bộ nhớ video với tốc độ cao và dung lượng lớn đ...... hiện toàn bộ
#Bộ nhớ truy cập ngẫu nhiên #Transistor #Nguồn cung cấp năng lượng #Mảng #Giải mã #Thanh ghi #Kiến trúc máy tính
A 26 dB, 1.2 GHz wideband GaAs MESFET variable gain amplifier
Symposium 1989 on VLSI Circuits - - 1989
Spargo, Abidi
As an example of analog circuit design in GaAs MESFET IC technology. which wants for the breadth of design techniques that silicon ICs enjoy. we describe here a monolithic amplifier offering a gain variable from 30 dB to below 0 dB. at a bandwidth in excess of 1 GHz, and matched to 5OΩ at the input and output pons. This may find application in wideband digital communication receivers. in fiber opt...... hiện toàn bộ
#Gain #Bandwidth #Integrated circuits #Voltage measurement #MESFETs #Gallium arsenide #Gain measurement
A latch-up like new failure mechanism for high density cmos dynamic RAM's - hysteresis in operating Vcc range
Symposium 1989 on VLSI Circuits - - 1989
Furuyama, Ishiuchi, Tanaka, Watanabe, Kohyama, Kiroura, Muraoka, Sugiura, Natori
AS the RAM has reached higher Integration, transistors have been miniaturized as well as the number of transistors on a chip has increased. Therefore, the substrate current generated by the RAM circuit due to impact ionization has increased drastically. In addition, since substrate impurity concentration has increased with the device scaling, the back-gate bias effect of a transistor has become st...... hiện toàn bộ
#Random access memory #Substrates #Amplitude modulation #Transistors #Hysteresis #Threshold voltage #Couplings
A new staggered virtual ground array architecture implemented in a 4Mb CMOS EPROM
Symposium 1989 on VLSI Circuits - - 1989
All, Nguyen, Sani, Shubat, Hu, Me, Kazarounian, Eltan
A new array architecture Is Introduced which Is suitable for very high density €PROMS. For a given set of design rules, this approach yields 40% Smaller array size compared to previous array architectures. The Staggered Virtual Ground (SVG) array has been Implemented based on the split gate EPROM technology. A dual function column muxing scheme and Address Transition Detection design techniques ha...... hiện toàn bộ
#EPROM #Logic gates #III-V semiconductor materials #Aluminum nitride #Tungsten #CMOS technology #Throughput
A review of superconducting three-terminal devices
Symposium 1989 on VLSI Circuits - - 1989
Kawabe
Superconducting three-terminal devices have been extensively given attention as one of future digital devices since Bcdnorz and Mueller discovered high-critical-temperature superconductivity in the La-Ba-Cu-0 system. The use of zero-resistance superconductivity and low noise cryogenics is expectcd for a limiting field of silicone semiconductor devices. In this paper, it is worthwhile to review som...... hiện toàn bộ
#Superconductor devices #Digital systems #Temperature measurement
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