A new staggered virtual ground array architecture implemented in a 4Mb CMOS EPROM

All1, Nguyen1, Sani1, Shubat1, Hu1, Me, Kazarounian, Eltan1
1Waferscale Integration, Inc., Fremont, CA, USA

Tóm tắt

A new array architecture Is Introduced which Is suitable for very high density €PROMS. For a given set of design rules, this approach yields 40% Smaller array size compared to previous array architectures. The Staggered Virtual Ground (SVG) array has been Implemented based on the split gate EPROM technology. A dual function column muxing scheme and Address Transition Detection design techniques have been used to achieve a 90nS 4Mb EPROM. The die size Is 7.6mn x 6.5m and has been fabricated In a 1.25um CMOS technology.

Từ khóa

#EPROM #Logic gates #III-V semiconductor materials #Aluminum nitride #Tungsten #CMOS technology #Throughput

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