A 26 dB, 1.2 GHz wideband GaAs MESFET variable gain amplifier

Symposium 1989 on VLSI Circuits - 1989
Spargo1, Abidi1
1Integrated Circuits & Systems Laboratory Electrical Engineering Department, University of California, Los Angeles, CA, USA

Tóm tắt

As an example of analog circuit design in GaAs MESFET IC technology. which wants for the breadth of design techniques that silicon ICs enjoy. we describe here a monolithic amplifier offering a gain variable from 30 dB to below 0 dB. at a bandwidth in excess of 1 GHz, and matched to 5OΩ at the input and output pons. This may find application in wideband digital communication receivers. in fiber optics systems, or as a general we variable gain amplifier (VGA).

Từ khóa

#Gain #Bandwidth #Integrated circuits #Voltage measurement #MESFETs #Gallium arsenide #Gain measurement

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Symposium 1989 on VLSI Circuits

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