International Conference on Simulation of Semiconductor Processes and Devices
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Investigation of magnetic field effects on energy gap for nanoscale InAs/GaAs semiconductor ring structures
- Trang 155-158
We investigate the electron and hole energy states for ellipsoidal and rectangular torus-shaped InAs/GaAs semiconductor quantum rings in an external magnetic field. Our realistic three-dimensional (3D) model construction is based on: (i) the effective mass Hamiltonian in non-parabolic approximation for electrons, (ii) the effective mass Hamiltonian in parabolic approximation for holes, (iii) the p......
#Gallium arsenide #Toroidal magnetic fields #Charge carrier processes #Effective mass #Energy states #Magnetic confinement #Boundary conditions #Iterative methods #Photonic band gap #Magnetooptic effects
A strategy for enabling predictive TCAD in development of sub-100nm CMOS technologies
- Trang 33-38
CMOS technology development is an expensive undertaking. Predictive TCAD can be a key tool in reducing the time and cost of CMOS development by acting as a virtual wafer fah where experimental lots are first simulated and the results analyzed before the first process step is ever run. In this way errors may be uncovered, poor splits eliminated and inadequate experimental designs improved. Each lot......
#CMOS technology #Implants #Semiconductor device modeling #Computational modeling #Semiconductor process modeling #Predictive models #Silicon #Space technology #Costs #Space exploration
GIDL simulation and optimization for 0.13 /spl mu/m/1.5 V low power CMOS transistor design
- Trang 43-46
In this work, we calibrate a BTBT model based on measured GIDL data, and incorporate the model into our process/device simulations to directly correlate process with device performance and leakage. For the first time, we quantitatively explore an overall picture of tradeoffs between device leakage and performance as functions of process conditions. The explored design space has been used in proces......
#Design optimization #Tunneling #Space exploration #CMOS process #Medical simulation #MOS devices #Power measurement #Predictive models #Cost function #Current measurement
Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET
- Trang 203-206
A detailed investigation of the drift resistance evolution with the gate and drain biases in Lateral DMOS architectures is reported. The extractions are performed using the concept of intrinsic drain voltage, V/sub K/, applied to both simulated and measured data. Some new special test structures (MESDRIFT) have been designed and fabricated in order to investigate the DMOS bias-dependent drift resi......
#Voltage #MOSFETs #Electrical resistance measurement #Testing #Analytical models #Numerical simulation #Integrated circuit modeling #CMOS technology #Data mining #Performance evaluation
Automatic order reduction of thermo-electric model for micro-ignition unit
- Trang 131-134
In this paper we present an automatic, Krylov-subspace-based order reduction of a thermo-electric model, describing a novel type of micropropulsion device. Model order reduction is essential for achieving easily to evaluate, yet accurate macromodel of the device, and Is needed for simulating both the microthruster array and its driving circuitry. We present numerical simulation results of the full......
#Fuels #Equations #Finite element methods #Reduced order systems #Current #Biomembranes #Ignition #Thermal conductivity #Linear systems #Circuit simulation
Mô phỏng số hàm sóng hai hạt trong các dây lượng tử Dịch bởi AI
- Trang 175-178
Vì yêu cầu chính của máy tính lượng tử là việc tạo ra và khai thác sự ràng buộc, một nghiên cứu chi tiết về các trạng thái liên kết đã được thực hiện dựa trên một hệ thống rắn dựa trên các dây lượng tử liên kết. Đầu tiên, một tổng quan ngắn gọn về các cổng cơ bản được cung cấp, dựa trên các nghiên cứu sơ bộ, tiếp theo là phân tích các electron di chuyển dọc theo các dây lượng tử liên kết. Động lực......
#Numerical simulation #Wave functions #Wires #Electrons #Quantum computing #Quantum entanglement #Schrodinger equation #Coupling circuits #Circuit simulation #Analytical models
Characterization of multi-barrier tunneling diodes and vertical transistors using 2-D device simulation
- Trang 167-170
A novel memory cell which adopts a floating gate device with the writing mechanism of direct tunneling through the multiple tunnel junction(MTJ) was proposed recently. The device is known to have potential advantages of scalability, high density, high speed, long data retention time, low voltage operation, low power consumption and good endurability. Characterization and optimization of the vertic......
#Diodes #Nonvolatile memory #Writing #Scalability #Low voltage #Energy consumption #Magnetic tunneling #Numerical analysis #Guidelines #Fabrication
Nanoelectronic 3-D (NEMO 3-D) simulation of multimillion atom quantum dot systems
- Trang 163-166
The convergence of electron and hole ground states of a dome-shaped In/sub 0.6/Ga/sub 0.4/As quantum dot as a function of the size of the surrounding buffer is explored within an sp/sup 3/d/sup 5/s* tight binding model. It is found that although the quantum dot encompasses only 2 /spl times/ 10/sup 5/ atoms, proper convergence of ground state eigenenergies requires that over 10 times as many atoms......
#Quantum dots #US Department of Transportation #Stationary state #Computational modeling #Convergence #Propulsion #Laboratories #Electronic mail #Charge carrier processes #Boundary conditions
Ensemble Monte Carlo/molecular dynamics simulation of inversion layer mobility in Si MOSFETs - effects of substrate impurity
- Trang 25-28
Electron transport in bulk Si and MOSFET inversion layers is studied using an ensemble Monte Carlo (EMC) technique coupled with the molecular dynamics (MD) method. The Coulomb interactions among point charges (electrons and negative ions) are directly taken into account in the simulation. It is demonstrated that the static screening of Coulomb interactions is correctly simulated by the EMC/MD meth......
#Monte Carlo methods #MOSFETs #Electromagnetic compatibility #Electron mobility #Substrates #Impurities #Particle scattering #Information systems #FETs #Threshold voltage
Author index
- Trang 283-284 - 2002
The author index contains an entry for each author and coauthor included in the proceedings record.