International Conference on Simulation of Semiconductor Processes and Devices
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Các bài báo tiêu biểu
A novel CDM-like discharge effect during human body model (HBM) ESD stress
- Trang 115-118
Interactions between ESD protection devices and other components of a chip can
lead to complex and not easily anticipated discharge behaviour. Triggering of a
protection MOSFET is equivalent to the closing of a fast switch and can cause
substantial transient discharge currents. The peak value of this current depends
on the chip capacitance, resistance, properties of the protection clamp, etc.
Care...
#Humans #Biological system modeling #Electrostatic discharge #Stress #Protection #Switches #MOSFET circuits #Capacitance #Immune system #Clamps
2D simulation of a buried-heterostructure tunable twin-guide DFB laser diode
- Trang 55-58
A 2D simulation of an InGaAsP-InP buried-heterostructure tunable twin-guide
(TTG) DFB laser diode is performed. The device structure is optimized with
respect to maximal tuning range and output power. To minimize the current
leakage around the active region, a p-n-p-n current blocking region is also
modeled and its effect on the laser characteristics is discussed. Good agreement
between simulation...
#Tunable circuits and devices #Diode lasers #Laser tuning #Optical tuning #Laser modes #Distributed feedback devices #Optical refraction #Optical scattering #Equations #Quantum well lasers
A new gate current model accounting for a non-Maxwellian electron energy distribution function
- Trang 235-238
We report on a new formulation to describe hot electron injection through gate
dielectrics. It is based on an expression which accounts for the non-Maxwellian
shape of the electron energy distribution function. We use the first three even
moments of the Boltzmann equation n, T/sub n/, and /spl beta//sub n/ found by
the solution of a six moments transport model to describe the shape of the
distribu...
#Distribution functions #Shape #Tunneling #Monte Carlo methods #MOSFET circuits #Secondary generated hot electron injection #Tail #Lattices #Temperature distribution #Microelectronics
Simulation and inverse modeling of TEOS deposition processes using a fast level set method
- Trang 191-194
Deposition and etching of silicon trenches is an important manufacturing step
for state of the art memory cells. Understanding and simulating the transport of
gas species and surface evolution enables to achieve void-less filling of deep
trenches, to predict the resulting profiles, and thus to optimize process
parameters with respect to manufacturing throughput and the quality of the
resulting mem...
#Inverse problems #Level set #Predictive models #Computational modeling #Scanning electron microscopy #Etching #Silicon #Filling #Manufacturing processes #Virtual manufacturing
Simulation of DGSOI MOSFETs with a Schrodinger-Poisson based mobility model
- Trang 21-24
Ultra-thin DGSOI transistors are considered as one of the most promising devices
for future VLSI. Besides expected improvements in the sub-threshold behavior, a
theoretical enhancement of the channel mobility was found by some authors. Here,
we apply a quantum-mechanical mobility model, based on an integrated
Schrodinger/Poisson solver, to double-gate SOI MOSFETs with a range of silicon
slab thick...
#MOSFETs #Acoustic scattering #Particle scattering #Slabs #Semiconductor device modeling #Electrons #Electrostatics #Laboratories #Systems engineering and theory #Very large scale integration
Impact of electron heat conductivity on electron energy flux
- Trang 147-150
Equations in the hydrodynamic model were evaluated by direct calculation of the
drift, diffusion, and scattering terms obtained by separating the motion of
particles in Monte Carlo simulations. It was confirmed that the conservation
equations for momentum and energy were constructed adequately. However, it was
found that an artificial operation was necessary for describing the energy flux
equation...
#Electrons #Conductivity #Particle scattering #Hydrodynamics #Scattering parameters #Boltzmann equation #Steady-state #Temperature distribution #Large scale integration #Laboratories
An adaptive grid approach for the simulation of electromigration induced void migration
- Trang 253-256
For tracking electromigration induced evolution of voids a diffuse interface
model is applied. We assume an interconnect as two-dimensional electrically
conducting via which contains initially a circular void. The diffuse interface
governing equation was solved applying a finite element scheme with a robust
local grid adaptation algorithm. Simulations were carried out for voids exposed
to high cur...
#Electromigration #Integrated circuit interconnections #Equations #Finite element methods #Shape #Robustness #Chemicals #Electrons #Microelectronics #Circuit simulation
A comprehensive simulation study of strained-Si/SiGe nMODFET scaling for RF applications
- Trang 59-62
2-dimensional (2-D) device simulations have been performed to study the scaling
of strained-Si/SiGe nMODFETs. Device fabrication has been conducted to verify
the simulation results. It is found that lateral scaling alone cannot improve
the device performance. In order to achieve high speed (fT > 300 GHz),
acceptable voltage gain (> 10) and good turnoff characteristics (> 1000) for RF
applications,...
#Silicon germanium #Germanium silicon alloys #Radio frequency #MODFETs #HEMTs #CMOS technology #Medical simulation #Solid modeling #Epitaxial layers
Simulation of direct source-to-drain tunnelling using the density gradient formalism: Non-Equilibrium Greens Function calibration
- Trang 267-270
Quantum mechanical confinement effects, gate, hand-to-hand and source-to-drain
tunnelling will dramatically affect the characteristics of future generation
nanometre scaled devices. It has been demonstrated already that first-order
quantum corrections, which satisfactorily describe quantum confinement effects,
can be introduced into efficient TCAD orientated drift-diffusion simulators
using the de...
#Tunneling #Green function #Calibration #Potential well #Quantum mechanics #Character generation #Nanoscale devices #Green's function methods #Effective mass #MOSFETs
The physical phenomena responsible for excess noise in short-channel MOS devices
- Trang 75-78
The physical phenomena responsible for the excess noise in short-channel MOS
devices are explained based on the non-equilibrium noise theory. Comparing the
MOS excess noise with the well known excess noise in a mesoscopic conductor, it
is suggested that the physical origins of both are the same. Using this theory,
it is proposed that the noise sources used in the impedance field method (IFM)
shoul...
#MOS devices #Conductors #Voltage #Impedance #Predictive models #Semiconductor device modeling #Electrons #Scattering #Radio frequency #Noise figure