International Conference on Simulation of Semiconductor Processes and Devices
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Các bài báo tiêu biểu
A strategy to enforce the discrete minimax principle on finite element meshes
- Trang 183-186
Low quality meshes in three-dimensional finite element diffusion simulations
often violate the discrete Minimax principle. An indication of this shortcoming
is the occurrence of negative concentrations. We present an a posteriori
refinement algorithm to enforce the discrete Minimax principle by locally
refining the mesh based on the last time-step. Two examples of diffusion
simulations where negat...
#Minimax techniques #Finite element methods #Iterative algorithms #History #Microelectronics #Diffusion processes #Entropy #Boundary conditions
Statistical fluctuation analysis by Monte Carlo ion implantation method
- Trang 199-202
This paper shows a new statistical fluctuation analysis method by Monte Carlo
ion implantation and investigates Vt fluctuations due to statistical variation
of dopant profile by 3D process-device simulation system. This method is very
useful to analyze a statistical fluctuation in sub-100 nm MOSFETs efficiently.
#Fluctuations #Monte Carlo methods #Ion implantation #Analytical models #Threshold voltage #Semiconductor process modeling #Computational modeling #Implants #Doping profiles #MOSFETs
Integrated atomistic process and device simulation of decananometre MOSFETs
- Trang 87-90
In this paper we present a methodology for the integrated atomistic process and
device simulation of decananometre MOSFETs. The atomistic process simulations
were carried out using the kinetic Monte Carlo process simulator DADOS, which is
now integrated into the Synopsys 3D process and device simulation suite Taurus.
The device simulations were performed using the Glasgow 3D statistical atomistic
...
#MOSFETs #Silicon #Fluctuations #Atomic measurements #Stochastic processes #Analytical models #Atomic layer deposition #Semiconductor process modeling #Kinetic theory #Monte Carlo methods
On density-gradient modeling of tunneling through insulators
- Trang 275-278
The density gradient model (DG) is tested for its ability to describe tunneling
currents through thin insulating barriers. Simulations of single barriers (MOS
diodes, MOSFETs) and double barriers show the limitations of the DG model. As a
reference the Schrodinger-Bardeen method is taken. 'Resonant tunneling' in the
density gradient model turns out to be an artifact related to large density
differ...
#Tunneling #Insulation #MOSFETs #Charge carrier processes #Modeling #Schrodinger equation #Partial differential equations #Poisson equations #Laboratories #Electronic mail
Quantum transport modeling in nano-scale devices
- Trang 261-266
We present results and describe progress we have made in the development of our
quantum transport modeling for nanoscale devices. Our simulation is based upon
either the nonequilibrium Green's function method (NEGF) or the quantum
correction (QC) associated with the density gradient method (DG) and/or the
effective potential method (EP). We show the results of our modeling methods
applied to sever...
#Nanoscale devices #Quantum mechanics #Integrated circuit modeling #Atomic layer deposition #MOSFETs #Tunneling #Analytical models #Electrons #Green's function methods #Diodes
Investigation of the electron mobility in strained Si/sub 1-x/Ge/sub x/ at high Ge composition
- Trang 29-32
Monte Carlo simulation of the low field electron mobility of strained Si and
SiGe active layers on SiGe substrate is considered. The Ge mole fractions of
both the active layer and the substrate are varied in a wide range. The linear
deformation potential theory is used to calculate the shifts of the conduction
band minima due to the uniaxial strain along [001]. The energy shifts and the
effective ...
#Electron mobility #Silicon germanium #Germanium silicon alloys #Capacitive sensors #Effective mass #Scattering #Tensile stress #Conducting materials #Germanium alloys #Monte Carlo methods
Wigner transport through tunneling structures scattering interpretation of the potential operator
- Trang 187-190
A stochastic method for simulation of quantum transport in nanoscale electronic
devices is proposed. The interaction with the Wigner potential is interpreted as
a scattering mechanism, which is a counterpart to the scattering mechanisms due
to the lattice imperfections. The derived quantum Monte Carlo algorithm retains
the basic features of the Single Particle Monte Carlo method used for simulatio...
#Tunneling #Particle scattering #Stochastic processes #Monte Carlo methods #Phonons #Integral equations #Microelectronics #Nanoscale devices #Lattices #Fourier transforms
Hot-carrier energy distribution model and its application to the MOSFET substrate current
- Trang 171-173
The lack of information for carrier energy distributions in the continuum
drift-diffusion (DD) or hydro-dynamic (HD) device simulation has been a major
obstacle in simulating the physical phenomena related to hot carriers. In this
study, a practical construction method of the hot-carrier energy distribution is
proposed. Results from Monte-Carlo (MC) simulation in the uniform field
distribution are...
#Hot carriers #MOSFET circuits #Electrons #Impact ionization #Computational modeling #Substrates #High definition video #Integrated circuit modeling #Power engineering and energy #Circuit simulation
Analysis of injection current with electron temperature for high-K gate stacks
- Trang 239-242
Though, high dielectric constant material is a possible near future candidate to
suppress gate current densities of MOSFETs, the barrier height generally
decreases with increasing dielectric constant. In this paper, the injection
current through gate stacks has been calculated while taking into account the
electron temperature using the W.K.B. method to understand the impact of the
injection curre...
#Electrons #Temperature #High K dielectric materials #High-K gate dielectrics #Current density #Silicon #MOSFETs #Probability #Dielectric constant #Tunneling
Simulation of DGSOI MOSFETs with a Schrodinger-Poisson based mobility model
- Trang 21-24
Ultra-thin DGSOI transistors are considered as one of the most promising devices
for future VLSI. Besides expected improvements in the sub-threshold behavior, a
theoretical enhancement of the channel mobility was found by some authors. Here,
we apply a quantum-mechanical mobility model, based on an integrated
Schrodinger/Poisson solver, to double-gate SOI MOSFETs with a range of silicon
slab thick...
#MOSFETs #Acoustic scattering #Particle scattering #Slabs #Semiconductor device modeling #Electrons #Electrostatics #Laboratories #Systems engineering and theory #Very large scale integration