International Conference on Simulation of Semiconductor Processes and Devices
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Perspectives in microscopic carrier transport
- Trang 1-4
A brief review is given of recent investigation of transport properties of nanostructures from semiconductor quantum wires and dots to artificial crystals with exotic electronic properties including carbon nanotubes as an example. The purpose of this review is to discuss some examples of recent developments and the future outlook in the investigation of transport properties of these systems.
#Microscopy #Quantum dots #Wires #Electron emission #Physics #Hall effect #Lattices #Energy states #Ballistic transport #Immune system
The process modeling hierarchy: connecting atomistic calculations to nanoscale behavior
- Trang 213-216
In this work, we review efforts to make effective use of atomistic calculations for the advancement of VLSI process simulation.
#Joining processes #Bismuth #Kinetic theory #Boron #Very large scale integration #Circuit simulation #Nanoscale devices #Fabrication #Ion implantation #Monte Carlo methods
Circuit-simulation model of gate-drain-capacitance changes in small-size MOSFETs due to high channel-field gradients
- Trang 51-54
The field gradient along the MOSFET channel is included in the modeling of the gate-drain capacitance (C/sub gd/) by an induced capacitance approach. The new approach has been successfully implemented in surface-potential based model HiSIM (Hiroshima-university STARC IGFET Model) and is capable of reproducing measured effects, which are particularly significant for pocket-implant technology, accur...... hiện toàn bộ
#Circuits #MOSFETs #Capacitance #FETs #Particle measurements #Medical simulation #Analytical models #Radio frequency #Costs #Implants
A strategy for enabling predictive TCAD in development of sub-100nm CMOS technologies
- Trang 33-38
CMOS technology development is an expensive undertaking. Predictive TCAD can be a key tool in reducing the time and cost of CMOS development by acting as a virtual wafer fah where experimental lots are first simulated and the results analyzed before the first process step is ever run. In this way errors may be uncovered, poor splits eliminated and inadequate experimental designs improved. Each lot...... hiện toàn bộ
#CMOS technology #Implants #Semiconductor device modeling #Computational modeling #Semiconductor process modeling #Predictive models #Silicon #Space technology #Costs #Space exploration
An efficient algorithm for 3D interconnect capacitance extraction considering floating conductors
- Trang 107-110
With the inclusion of floating conductors in integrated circuits, conventional simulation tools exhibit prohibitive calculation times. A new simulation tool, called ICARE, was developed to extract efficiently the 3D capacitance matrix of interconnect structures embedded in a multi-layered dielectric environment. Using the so-called fictitious domain method, it leads to a coupled linear system, wit...... hiện toàn bộ
#Conductors #Dielectrics #Integrated circuit interconnections #Boundary conditions #Parasitic capacitance #Lagrangian functions #Integrated circuit modeling #Circuit simulation #Linear systems #Electric variables
Gate tunnelling and impact ionisation in sub 100 nm PHEMTs
- Trang 139-142
Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations. Impact ionization is included in MC simulation as an additional scattering mechanism whereas thermionic tunnelling is treated in the WKB approximation during each time step in selfconsistent MC ...... hiện toàn bộ
#Tunneling #Impact ionization #PHEMTs #Threshold voltage #Electric breakdown #Electron mobility #HEMTs #MODFETs #Monte Carlo methods #Scattering
A new non-pair diffusion based dopant pile-up model for process designers and its prediction accuracy
- Trang 207-210
This paper describes an effective model which reproduces the dopant pile-up in the Si/SiO/sub 2/ interface using a conventional process simulator that solves one equation for each impurity. The proposed model is based on the physics where the key factor of RSCE is the dopant pile-up in the Si/SiO/sub 2/ interface. The capability of the model is investigated though the comparison to measurements in...... hiện toàn bộ
#Semiconductor process modeling #Predictive models #Process design #MOSFETs #Equations #Accuracy #Large scale integration #Impurities #Physics #Design optimization
Integrated atomistic process and device simulation of decananometre MOSFETs
- Trang 87-90
In this paper we present a methodology for the integrated atomistic process and device simulation of decananometre MOSFETs. The atomistic process simulations were carried out using the kinetic Monte Carlo process simulator DADOS, which is now integrated into the Synopsys 3D process and device simulation suite Taurus. The device simulations were performed using the Glasgow 3D statistical atomistic ...... hiện toàn bộ
#MOSFETs #Silicon #Fluctuations #Atomic measurements #Stochastic processes #Analytical models #Atomic layer deposition #Semiconductor process modeling #Kinetic theory #Monte Carlo methods
Investigation of the electron mobility in strained Si/sub 1-x/Ge/sub x/ at high Ge composition
- Trang 29-32
Monte Carlo simulation of the low field electron mobility of strained Si and SiGe active layers on SiGe substrate is considered. The Ge mole fractions of both the active layer and the substrate are varied in a wide range. The linear deformation potential theory is used to calculate the shifts of the conduction band minima due to the uniaxial strain along [001]. The energy shifts and the effective ...... hiện toàn bộ
#Electron mobility #Silicon germanium #Germanium silicon alloys #Capacitive sensors #Effective mass #Scattering #Tensile stress #Conducting materials #Germanium alloys #Monte Carlo methods
Cross validation of quantum simulations and optical measurements in single electron memories with silicon nano-crystallites
- Trang 179-182
Quantum simulations of single electron memories (SEM) have been performed on single nano-crystals, axisymmetrical and far enough from their neighbors to allow Poisson and Schrodinger equations to be solved in polar coordinates. The variations of the transition energies with respect to the shape of the dots is discussed, arriving to the conclusion that the major dependency is with respect to the vo...... hiện toàn bộ
#Electron optics #Single electron memory #Silicon #Numerical analysis #Schrodinger equation #Shape #Tunneling #Numerical simulation #Photoluminescence #Absorption