International Conference on Simulation of Semiconductor Processes and Devices
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Các bài báo tiêu biểu
Transistor width dependence of LER degradation to CMOS device characteristics
- Trang 95-98
When transistor gate length is scaled down, the impact of transistor poly gate
line edge roughness (LER) on device characteristics becomes significant. In this
work, we study the dependence on transistor width of the low spatial frequency
LER induced CMOS device Ion/Ioff degradations, based on TCAD simulation results
and silicon data. Methodology to account for LER effects in device optimization
i...
#Degradation #Scattering #Clouds #Intrusion detection #Silicon #Frequency #Optimization methods #Shape #CMOS technology #Instruments
Bias-dependent drift resistance modeling for accurate DC and AC simulation of asymmetric HV-MOSFET
- Trang 203-206
A detailed investigation of the drift resistance evolution with the gate and
drain biases in Lateral DMOS architectures is reported. The extractions are
performed using the concept of intrinsic drain voltage, V/sub K/, applied to
both simulated and measured data. Some new special test structures (MESDRIFT)
have been designed and fabricated in order to investigate the DMOS
bias-dependent drift resi...
#Voltage #MOSFETs #Electrical resistance measurement #Testing #Analytical models #Numerical simulation #Integrated circuit modeling #CMOS technology #Data mining #Performance evaluation
3D MOSFET simulation considering long-range Coulomb potential effects for analyzing statistical dopant-induced fluctuations associated with atomistic process simulator
- Trang 91-94
We have developed a realistic 3-D process/device simulation method for
investigating the fluctuation in device characteristics induced by the
statistical nature of the number and position of discrete dopant atoms. We used
it to investigate the variations in characteristics of a sub-100 nm CMOS device
induced by realistic dopant fluctuations considering practical device
fabrication processes. In pa...
#MOSFET circuits #Analytical models #Fluctuations #Predictive models #Atomic layer deposition #Impurities #Convergence #Lakes #Silicon #CMOS process
Hot carrier induced degradation due to multi-phonon mechanism analyzed by lattice and device Monte Carlo coupled simulation
- Trang 243-246
A new multi-phonon model for hydrogen desorption at Si/SiO/sub 2/ interface due
to hot carriers is proposed for a multi-scale simulation, in which Lattice Monte
Cairo method is coupled with Device Monte Cairo method by using a mediator-based
common software platform. The power law between interface trap density and time
(N/sub it//spl prop/t/sup a/) is demonstrated which shows good agreement with
...
#Hot carriers #Degradation #Lattices #Analytical models #Electrons #Particle scattering #Monte Carlo methods #Phonons #Electrodes #Hydrogen
A new gate current model accounting for a non-Maxwellian electron energy distribution function
- Trang 235-238
We report on a new formulation to describe hot electron injection through gate
dielectrics. It is based on an expression which accounts for the non-Maxwellian
shape of the electron energy distribution function. We use the first three even
moments of the Boltzmann equation n, T/sub n/, and /spl beta//sub n/ found by
the solution of a six moments transport model to describe the shape of the
distribu...
#Distribution functions #Shape #Tunneling #Monte Carlo methods #MOSFET circuits #Secondary generated hot electron injection #Tail #Lattices #Temperature distribution #Microelectronics
Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model
- Trang 195-198
Anomalous output characteristics are observed in hydrodynamic simulations of
partially depleted SOI MOSFETs. The effect that the drain current reaches a
maximum and then decreases is peculiar to the hydrodynamic transport model. It
is not observed in drift-diffusion simulations and its occurrence in
measurements is questionable. An explanation of the cause of this effect is
given, and a solution i...
#MOSFET circuits #Hydrodynamics #High definition video #Equations #Ocean temperature #Hot carriers #Computational modeling #Microelectronics #Voltage #Current measurement
Mô phỏng số hàm sóng hai hạt trong các dây lượng tử Dịch bởi AI
- Trang 175-178
Vì yêu cầu chính của máy tính lượng tử là việc tạo ra và khai thác sự ràng buộc,
một nghiên cứu chi tiết về các trạng thái liên kết đã được thực hiện dựa trên
một hệ thống rắn dựa trên các dây lượng tử liên kết. Đầu tiên, một tổng quan
ngắn gọn về các cổng cơ bản được cung cấp, dựa trên các nghiên cứu sơ bộ, tiếp
theo là phân tích các electron di chuyển dọc theo các dây lượng tử liên kết.
Động lực...
#Numerical simulation #Wave functions #Wires #Electrons #Quantum computing #Quantum entanglement #Schrodinger equation #Coupling circuits #Circuit simulation #Analytical models
Integrated TCAD and ECAD solutions - a paradigm shift
- Trang 5-8
This paper highlights the emerging need for selective integration of
physical-model based TCAD modeling and simulation tools that have been mostly
applied to technology development with ECAD tools that have been traditionally
used for product design. The emerging technology trends that lead to this
paradigm shift are highlighted. The architecture and requirements of integrated
TCAD-ECAD solutions ...
#Electronic design automation and methodology #Product design #Numerical models #Solid modeling #Lithography #Integrated circuit interconnections #Frequency #Educational institutions #P-n junctions #Energy consumption
Characterization of multi-barrier tunneling diodes and vertical transistors using 2-D device simulation
- Trang 167-170
A novel memory cell which adopts a floating gate device with the writing
mechanism of direct tunneling through the multiple tunnel junction(MTJ) was
proposed recently. The device is known to have potential advantages of
scalability, high density, high speed, long data retention time, low voltage
operation, low power consumption and good endurability. Characterization and
optimization of the vertic...
#Diodes #Nonvolatile memory #Writing #Scalability #Low voltage #Energy consumption #Magnetic tunneling #Numerical analysis #Guidelines #Fabrication
MOSFET hot-carrier induced gate current simulation by self-consistent silicon/oxide Monte Carlo device simulation
- Trang 231-234
Hot electron transport in MOS transistors is investigated by means of a coupled
silicon/oxide Monte Carlo (MC) simulation. First, a new MC simulator able to
handle selfconsistently different materials is developed. Then, the impact of
oxide transport on the gate current (I/sub G/) is analyzed comparing different
injection models with experiments. It is shown that oxide transport plays an
important...
#MOSFET circuits #Hot carriers #Silicon #Monte Carlo methods #Integrated circuit modeling #Scattering #Potential well #Voltage #Electron emission #Computational modeling