International Conference on Simulation of Semiconductor Processes and Devices
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Các bài báo tiêu biểu
An efficient algorithm for 3D interconnect capacitance extraction considering floating conductors
- Trang 107-110
With the inclusion of floating conductors in integrated circuits, conventional
simulation tools exhibit prohibitive calculation times. A new simulation tool,
called ICARE, was developed to extract efficiently the 3D capacitance matrix of
interconnect structures embedded in a multi-layered dielectric environment.
Using the so-called fictitious domain method, it leads to a coupled linear
system, wit...
#Conductors #Dielectrics #Integrated circuit interconnections #Boundary conditions #Parasitic capacitance #Lagrangian functions #Integrated circuit modeling #Circuit simulation #Linear systems #Electric variables
Gate tunnelling and impact ionisation in sub 100 nm PHEMTs
- Trang 139-142
Impact ionization and thermionic tunnelling as two possible breakdown mechanisms
in scaled pseudomorphic high electron mobility transistors (PHEMTs) are
investigated by Monte Carlo (MC) device simulations. Impact ionization is
included in MC simulation as an additional scattering mechanism whereas
thermionic tunnelling is treated in the WKB approximation during each time step
in selfconsistent MC ...
#Tunneling #Impact ionization #PHEMTs #Threshold voltage #Electric breakdown #Electron mobility #HEMTs #MODFETs #Monte Carlo methods #Scattering
The physical phenomena responsible for excess noise in short-channel MOS devices
- Trang 75-78
The physical phenomena responsible for the excess noise in short-channel MOS
devices are explained based on the non-equilibrium noise theory. Comparing the
MOS excess noise with the well known excess noise in a mesoscopic conductor, it
is suggested that the physical origins of both are the same. Using this theory,
it is proposed that the noise sources used in the impedance field method (IFM)
shoul...
#MOS devices #Conductors #Voltage #Impedance #Predictive models #Semiconductor device modeling #Electrons #Scattering #Radio frequency #Noise figure
An adaptive grid approach for the simulation of electromigration induced void migration
- Trang 253-256
For tracking electromigration induced evolution of voids a diffuse interface
model is applied. We assume an interconnect as two-dimensional electrically
conducting via which contains initially a circular void. The diffuse interface
governing equation was solved applying a finite element scheme with a robust
local grid adaptation algorithm. Simulations were carried out for voids exposed
to high cur...
#Electromigration #Integrated circuit interconnections #Equations #Finite element methods #Shape #Robustness #Chemicals #Electrons #Microelectronics #Circuit simulation
On the optimal shape and location of silicided source and drain contacts
- Trang 39-42
A detailed simulation and analysis of the source/drain resistance is performed.
It is shown that the placement and depth of silicide regions can have a strong
influence on the total source/drain resistance. Simulations further show that
moving the silicided regions closer to the channel of a device will not
necessarily decrease source/drain resistance, and may actually cause the
resistance to incr...
#Shape #Contact resistance #Silicides #Schottky barriers #Semiconductor process modeling #Doping profiles #Ohmic contacts #Research and development #Microelectronics #Analytical models
Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model
- Trang 271-274
We report the results of numerical simulation of nanoscale SOI structures under
highly non-equilibrium conditions with the Density Gradient model. The
simulations have been carried out with the general purpose device simulator
DESSIS. We show that 2D quantum mechanical effects are important for the
structures under investigation. We demonstrate that our implementation of the DG
model is robust and...
#MOSFETs #Quantum mechanics #Modeling #Differential equations #Robustness #Systems engineering and theory #Boundary conditions #Nanostructures #FETs #Mutual coupling
Simulation of DGSOI MOSFETs with a Schrodinger-Poisson based mobility model
- Trang 21-24
Ultra-thin DGSOI transistors are considered as one of the most promising devices
for future VLSI. Besides expected improvements in the sub-threshold behavior, a
theoretical enhancement of the channel mobility was found by some authors. Here,
we apply a quantum-mechanical mobility model, based on an integrated
Schrodinger/Poisson solver, to double-gate SOI MOSFETs with a range of silicon
slab thick...
#MOSFETs #Acoustic scattering #Particle scattering #Slabs #Semiconductor device modeling #Electrons #Electrostatics #Laboratories #Systems engineering and theory #Very large scale integration
Integrated TCAD and ECAD solutions - a paradigm shift
- Trang 5-8
This paper highlights the emerging need for selective integration of
physical-model based TCAD modeling and simulation tools that have been mostly
applied to technology development with ECAD tools that have been traditionally
used for product design. The emerging technology trends that lead to this
paradigm shift are highlighted. The architecture and requirements of integrated
TCAD-ECAD solutions ...
#Electronic design automation and methodology #Product design #Numerical models #Solid modeling #Lithography #Integrated circuit interconnections #Frequency #Educational institutions #P-n junctions #Energy consumption
Nanoelectronic 3-D (NEMO 3-D) simulation of multimillion atom quantum dot systems
- Trang 163-166
The convergence of electron and hole ground states of a dome-shaped In/sub
0.6/Ga/sub 0.4/As quantum dot as a function of the size of the surrounding
buffer is explored within an sp/sup 3/d/sup 5/s* tight binding model. It is
found that although the quantum dot encompasses only 2 /spl times/ 10/sup 5/
atoms, proper convergence of ground state eigenenergies requires that over 10
times as many atoms...
#Quantum dots #US Department of Transportation #Stationary state #Computational modeling #Convergence #Propulsion #Laboratories #Electronic mail #Charge carrier processes #Boundary conditions
Monte Carlo simulation of electron transport in a carbon nanotube
- Trang 279-282
We use the Monte Carlo method to simulate electron transport in a zig-zag
single-walled carbon nanotube with a wrapping index of n=10. Results show large
low-field mobility, negative differential mobility, and large peaks in the drift
velocity reaching 3/spl times/10/sup 7/ cm/s.
#Carbon nanotubes #Phonons #Wrapping #Analytical models #Equations #Educational institutions #Electron mobility #Nanoelectronics #Logic circuits #Temperature