International Conference on Simulation of Semiconductor Processes and Devices
Cơ quản chủ quản: N/A
Các bài báo tiêu biểu
Perspectives in microscopic carrier transport
- Trang 1-4
#Microscopy #Quantum dots #Wires #Electron emission #Physics #Hall effect #Lattices #Energy states #Ballistic transport #Immune system
Integrated atomistic process and device simulation of decananometre MOSFETs
- Trang 87-90
#MOSFETs #Silicon #Fluctuations #Atomic measurements #Stochastic processes #Analytical models #Atomic layer deposition #Semiconductor process modeling #Kinetic theory #Monte Carlo methods
Modeling of ultra shallow junctions and hybrid source/drain profiles annealed by soak and spike RTA
- Trang 151-154
#Hybrid junctions #Annealing #Implants #Semiconductor process modeling #Calibration #Doping profiles #CMOS technology #Silicon #Research and development #Pulp manufacturing
2002 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2002 (IEEE Cat. No.02TH8621)
- Trang i-xiv - 2002
System level model of damping effects for highly perforated torsional microstructures
- Trang 111-114
#Damping #Microstructure #Computational modeling #Navier-Stokes equations #Computational geometry #Merging #Solid modeling #Computer networks #Distributed computing #Analytical models
A new gate current model accounting for a non-Maxwellian electron energy distribution function
- Trang 235-238
#Distribution functions #Shape #Tunneling #Monte Carlo methods #MOSFET circuits #Secondary generated hot electron injection #Tail #Lattices #Temperature distribution #Microelectronics
Surface mobility in silicon at large operating temperature
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#Silicon #Testing #Temperature distribution #Electric breakdown #MOSFET circuits #Temperature control #Manufacturing #Microelectronics #Impurities #Lattices
On the optimal shape and location of silicided source and drain contacts
- Trang 39-42
#Shape #Contact resistance #Silicides #Schottky barriers #Semiconductor process modeling #Doping profiles #Ohmic contacts #Research and development #Microelectronics #Analytical models
Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model
- Trang 271-274
#MOSFETs #Quantum mechanics #Modeling #Differential equations #Robustness #Systems engineering and theory #Boundary conditions #Nanostructures #FETs #Mutual coupling
Self-consistent single-particle simulation
- Trang 159-162
#Modeling #Doping #Monte Carlo methods #MOSFET circuits #Hydrodynamics #Poisson equations #High definition video #Stability #Systems engineering and theory #Couplings