International Conference on Simulation of Semiconductor Processes and Devices
Cơ quản chủ quản: N/A
Các bài báo tiêu biểu
Transistor width dependence of LER degradation to CMOS device characteristics
- Trang 95-98
#Degradation #Scattering #Clouds #Intrusion detection #Silicon #Frequency #Optimization methods #Shape #CMOS technology #Instruments
Simulation and inverse modeling of TEOS deposition processes using a fast level set method
- Trang 191-194
#Inverse problems #Level set #Predictive models #Computational modeling #Scanning electron microscopy #Etching #Silicon #Filling #Manufacturing processes #Virtual manufacturing
A new gate current model accounting for a non-Maxwellian electron energy distribution function
- Trang 235-238
#Distribution functions #Shape #Tunneling #Monte Carlo methods #MOSFET circuits #Secondary generated hot electron injection #Tail #Lattices #Temperature distribution #Microelectronics
Coupled-field modeling of microdevices and microsystems
- Trang 9-14
#Computational modeling #Predictive models #Microelectromechanical devices #Micromechanical devices #Analytical models #Computer simulation #Laboratories #Visualization #Collaborative tools #Numerical simulation
Hot-carrier energy distribution model and its application to the MOSFET substrate current
- Trang 171-173
#Hot carriers #MOSFET circuits #Electrons #Impact ionization #Computational modeling #Substrates #High definition video #Integrated circuit modeling #Power engineering and energy #Circuit simulation
A strategy for enabling predictive TCAD in development of sub-100nm CMOS technologies
- Trang 33-38
#CMOS technology #Implants #Semiconductor device modeling #Computational modeling #Semiconductor process modeling #Predictive models #Silicon #Space technology #Costs #Space exploration
Modeling of the diffusion of implanted boron in strained Si/Si/sub 1-x/Ge/sub x/
- Trang 221-224
#Boron #Semiconductor process modeling #Silicon germanium #Germanium silicon alloys #Heterojunction bipolar transistors #Semiconductor device modeling #Annealing #Temperature #Stress #Potential energy
Simulation of DGSOI MOSFETs with a Schrodinger-Poisson based mobility model
- Trang 21-24
#MOSFETs #Acoustic scattering #Particle scattering #Slabs #Semiconductor device modeling #Electrons #Electrostatics #Laboratories #Systems engineering and theory #Very large scale integration
Numerical modeling of silicon film deposition in very-high-frequency plasma reactor
- Trang 135-138
#Numerical models #Silicon #Semiconductor films #Inductors #Plasma chemistry #Electrons #Plasma temperature #Plasma density #Chemical vapor deposition #Quantum mechanics
In-advance CPU time analysis for Monte Carlo device simulations
- Trang 103-106
#Monte Carlo methods #Analytical models #Stochastic processes #Stochastic resonance #Frequency #Noise level #Minimization methods #Microelectronics #Automatic control #Error correction