International Conference on Simulation of Semiconductor Processes and Devices
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An efficient algorithm for 3D interconnect capacitance extraction considering floating conductors
- Trang 107-110
With the inclusion of floating conductors in integrated circuits, conventional simulation tools exhibit prohibitive calculation times. A new simulation tool, called ICARE, was developed to extract efficiently the 3D capacitance matrix of interconnect structures embedded in a multi-layered dielectric environment. Using the so-called fictitious domain method, it leads to a coupled linear system, wit......
#Conductors #Dielectrics #Integrated circuit interconnections #Boundary conditions #Parasitic capacitance #Lagrangian functions #Integrated circuit modeling #Circuit simulation #Linear systems #Electric variables
Gate tunnelling and impact ionisation in sub 100 nm PHEMTs
- Trang 139-142
Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations. Impact ionization is included in MC simulation as an additional scattering mechanism whereas thermionic tunnelling is treated in the WKB approximation during each time step in selfconsistent MC ......
#Tunneling #Impact ionization #PHEMTs #Threshold voltage #Electric breakdown #Electron mobility #HEMTs #MODFETs #Monte Carlo methods #Scattering
Hot-carrier energy distribution model and its application to the MOSFET substrate current
- Trang 171-173
The lack of information for carrier energy distributions in the continuum drift-diffusion (DD) or hydro-dynamic (HD) device simulation has been a major obstacle in simulating the physical phenomena related to hot carriers. In this study, a practical construction method of the hot-carrier energy distribution is proposed. Results from Monte-Carlo (MC) simulation in the uniform field distribution are......
#Hot carriers #MOSFET circuits #Electrons #Impact ionization #Computational modeling #Substrates #High definition video #Integrated circuit modeling #Power engineering and energy #Circuit simulation
Cross validation of quantum simulations and optical measurements in single electron memories with silicon nano-crystallites
- Trang 179-182
Quantum simulations of single electron memories (SEM) have been performed on single nano-crystals, axisymmetrical and far enough from their neighbors to allow Poisson and Schrodinger equations to be solved in polar coordinates. The variations of the transition energies with respect to the shape of the dots is discussed, arriving to the conclusion that the major dependency is with respect to the vo......
#Electron optics #Single electron memory #Silicon #Numerical analysis #Schrodinger equation #Shape #Tunneling #Numerical simulation #Photoluminescence #Absorption
Modeling of ultra shallow junctions and hybrid source/drain profiles annealed by soak and spike RTA
- Trang 151-154
We discuss the 1D/2D modeling of arsenic profiles under soak and spike anneal conditions at both shallow extension and high concentration source/drain areas. This work also addresses the calibration of the phosphorus profile in a hybrid (arsenic + phosphorus) source/drain with various anneal temperatures. It is shown that the "+1" or modified "+n" model is not necessary for shallow arsenic profile......
#Hybrid junctions #Annealing #Implants #Semiconductor process modeling #Calibration #Doping profiles #CMOS technology #Silicon #Research and development #Pulp manufacturing
Monte Carlo simulation of consecutive implants into SiO/sub 2/ capped Si
- Trang 217-220
The low energy as-implanted profile is very sensitive to the cap oxide layer thickness and PAI conditions. In this work, theoretical and experimental studies have been carried out quantitatively to investigate these dependencies. Using ZBL pair-specific inter-atomic potentials in the Monte Carlo ion implantation simulator, UT-MARLOWE, consecutive implants of PAI and PLDD were simulated and above e......
#Predictive models #Nuclear electronics #Monte Carlo methods #Microelectronic implants #Circuit simulation #Electrons #Silicon #Artificial intelligence #Instruments #Ion implantation
Automatic order reduction of thermo-electric model for micro-ignition unit
- Trang 131-134
In this paper we present an automatic, Krylov-subspace-based order reduction of a thermo-electric model, describing a novel type of micropropulsion device. Model order reduction is essential for achieving easily to evaluate, yet accurate macromodel of the device, and Is needed for simulating both the microthruster array and its driving circuitry. We present numerical simulation results of the full......
#Fuels #Equations #Finite element methods #Reduced order systems #Current #Biomembranes #Ignition #Thermal conductivity #Linear systems #Circuit simulation
TCAD driven drain engineering for hot carrier reduction of 3.3V I/O p-MOSFET
- Trang 47-50
We present a TCAD driven hot carrier reduction methodology of 3.3V I/O p-MOSFETs design. The drain structures are successfully optimized in short time by applications of TCAD local models. Considering tradeoffs between hot carrier injection (HCI) and I/sub ON/, HALO/SDE of both core and I/O transistors can be totally optimized for photo-mask reduction.
#Hot carriers #MOSFET circuits #Electron traps #Human computer interaction #Charge carrier processes #Drain avalanche hot carrier injection #Hot carrier injection #Degradation #Design optimization #Calibration
Characterization of multi-barrier tunneling diodes and vertical transistors using 2-D device simulation
- Trang 167-170
A novel memory cell which adopts a floating gate device with the writing mechanism of direct tunneling through the multiple tunnel junction(MTJ) was proposed recently. The device is known to have potential advantages of scalability, high density, high speed, long data retention time, low voltage operation, low power consumption and good endurability. Characterization and optimization of the vertic......
#Diodes #Nonvolatile memory #Writing #Scalability #Low voltage #Energy consumption #Magnetic tunneling #Numerical analysis #Guidelines #Fabrication
Monte Carlo simulation of electron transport in a carbon nanotube
- Trang 279-282
We use the Monte Carlo method to simulate electron transport in a zig-zag single-walled carbon nanotube with a wrapping index of n=10. Results show large low-field mobility, negative differential mobility, and large peaks in the drift velocity reaching 3/spl times/10/sup 7/ cm/s.
#Carbon nanotubes #Phonons #Wrapping #Analytical models #Equations #Educational institutions #Electron mobility #Nanoelectronics #Logic circuits #Temperature