International Conference on Simulation of Semiconductor Processes and Devices
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Các bài báo tiêu biểu
An efficient algorithm for 3D interconnect capacitance extraction considering floating conductors
- Trang 107-110
With the inclusion of floating conductors in integrated circuits, conventional simulation tools exhibit prohibitive calculation times. A new simulation tool, called ICARE, was developed to extract efficiently the 3D capacitance matrix of interconnect structures embedded in a multi-layered dielectric environment. Using the so-called fictitious domain method, it leads to a coupled linear system, wit......
#Conductors #Dielectrics #Integrated circuit interconnections #Boundary conditions #Parasitic capacitance #Lagrangian functions #Integrated circuit modeling #Circuit simulation #Linear systems #Electric variables
Gate tunnelling and impact ionisation in sub 100 nm PHEMTs
- Trang 139-142
Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations. Impact ionization is included in MC simulation as an additional scattering mechanism whereas thermionic tunnelling is treated in the WKB approximation during each time step in selfconsistent MC ......
#Tunneling #Impact ionization #PHEMTs #Threshold voltage #Electric breakdown #Electron mobility #HEMTs #MODFETs #Monte Carlo methods #Scattering
In-advance CPU time analysis for Monte Carlo device simulations
- Trang 103-106
In this work it is shown for the first time how to calculate in advance by momentum-based noise simulation for stationary Monte Carlo (MC) device simulations the CPU time, which is necessary to achieve a predefined error level. In addition, analytical expressions for the simulation-time factor of terminal current estimation are given. Without further improvements of the MC algorithm MC simulations......
#Monte Carlo methods #Analytical models #Stochastic processes #Stochastic resonance #Frequency #Noise level #Minimization methods #Microelectronics #Automatic control #Error correction
Ensemble Monte Carlo/molecular dynamics simulation of inversion layer mobility in Si MOSFETs - effects of substrate impurity
- Trang 25-28
Electron transport in bulk Si and MOSFET inversion layers is studied using an ensemble Monte Carlo (EMC) technique coupled with the molecular dynamics (MD) method. The Coulomb interactions among point charges (electrons and negative ions) are directly taken into account in the simulation. It is demonstrated that the static screening of Coulomb interactions is correctly simulated by the EMC/MD meth......
#Monte Carlo methods #MOSFETs #Electromagnetic compatibility #Electron mobility #Substrates #Impurities #Particle scattering #Information systems #FETs #Threshold voltage
On the optimal shape and location of silicided source and drain contacts
- Trang 39-42
A detailed simulation and analysis of the source/drain resistance is performed. It is shown that the placement and depth of silicide regions can have a strong influence on the total source/drain resistance. Simulations further show that moving the silicided regions closer to the channel of a device will not necessarily decrease source/drain resistance, and may actually cause the resistance to incr......
#Shape #Contact resistance #Silicides #Schottky barriers #Semiconductor process modeling #Doping profiles #Ohmic contacts #Research and development #Microelectronics #Analytical models
Simulations of ultrathin, ultrashort double-gated MOSFETs with the density gradient transport model
- Trang 271-274
We report the results of numerical simulation of nanoscale SOI structures under highly non-equilibrium conditions with the Density Gradient model. The simulations have been carried out with the general purpose device simulator DESSIS. We show that 2D quantum mechanical effects are important for the structures under investigation. We demonstrate that our implementation of the DG model is robust and......
#MOSFETs #Quantum mechanics #Modeling #Differential equations #Robustness #Systems engineering and theory #Boundary conditions #Nanostructures #FETs #Mutual coupling
Modeling of ultra shallow junctions and hybrid source/drain profiles annealed by soak and spike RTA
- Trang 151-154
We discuss the 1D/2D modeling of arsenic profiles under soak and spike anneal conditions at both shallow extension and high concentration source/drain areas. This work also addresses the calibration of the phosphorus profile in a hybrid (arsenic + phosphorus) source/drain with various anneal temperatures. It is shown that the "+1" or modified "+n" model is not necessary for shallow arsenic profile......
#Hybrid junctions #Annealing #Implants #Semiconductor process modeling #Calibration #Doping profiles #CMOS technology #Silicon #Research and development #Pulp manufacturing
Investigation of the electron mobility in strained Si/sub 1-x/Ge/sub x/ at high Ge composition
- Trang 29-32
Monte Carlo simulation of the low field electron mobility of strained Si and SiGe active layers on SiGe substrate is considered. The Ge mole fractions of both the active layer and the substrate are varied in a wide range. The linear deformation potential theory is used to calculate the shifts of the conduction band minima due to the uniaxial strain along [001]. The energy shifts and the effective ......
#Electron mobility #Silicon germanium #Germanium silicon alloys #Capacitive sensors #Effective mass #Scattering #Tensile stress #Conducting materials #Germanium alloys #Monte Carlo methods
Simulation of DGSOI MOSFETs with a Schrodinger-Poisson based mobility model
- Trang 21-24
Ultra-thin DGSOI transistors are considered as one of the most promising devices for future VLSI. Besides expected improvements in the sub-threshold behavior, a theoretical enhancement of the channel mobility was found by some authors. Here, we apply a quantum-mechanical mobility model, based on an integrated Schrodinger/Poisson solver, to double-gate SOI MOSFETs with a range of silicon slab thick......
#MOSFETs #Acoustic scattering #Particle scattering #Slabs #Semiconductor device modeling #Electrons #Electrostatics #Laboratories #Systems engineering and theory #Very large scale integration
A strategy to enforce the discrete minimax principle on finite element meshes
- Trang 183-186
Low quality meshes in three-dimensional finite element diffusion simulations often violate the discrete Minimax principle. An indication of this shortcoming is the occurrence of negative concentrations. We present an a posteriori refinement algorithm to enforce the discrete Minimax principle by locally refining the mesh based on the last time-step. Two examples of diffusion simulations where negat......
#Minimax techniques #Finite element methods #Iterative algorithms #History #Microelectronics #Diffusion processes #Entropy #Boundary conditions