International Conference on Simulation of Semiconductor Processes and Devices
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Perspectives in microscopic carrier transport
- Trang 1-4
A brief review is given of recent investigation of transport properties of nanostructures from semiconductor quantum wires and dots to artificial crystals with exotic electronic properties including carbon nanotubes as an example. The purpose of this review is to discuss some examples of recent developments and the future outlook in the investigation of transport properties of these systems.
#Microscopy #Quantum dots #Wires #Electron emission #Physics #Hall effect #Lattices #Energy states #Ballistic transport #Immune system
Transistor width dependence of LER degradation to CMOS device characteristics
- Trang 95-98
When transistor gate length is scaled down, the impact of transistor poly gate line edge roughness (LER) on device characteristics becomes significant. In this work, we study the dependence on transistor width of the low spatial frequency LER induced CMOS device Ion/Ioff degradations, based on TCAD simulation results and silicon data. Methodology to account for LER effects in device optimization i...... hiện toàn bộ
#Degradation #Scattering #Clouds #Intrusion detection #Silicon #Frequency #Optimization methods #Shape #CMOS technology #Instruments
Finite element analysis of stress evolution in Si based front and back ends micro structures
- Trang 247-252
Nowadays, silicon technologies with feature sizes around 100 nm are used in the microelectronics industry to produce gigabits integrated circuits. The prime part of numerical simulation in their development is now well established. One of the purpose of the numerical analyses is the improvement of the mechanical reliability. We synthetize in this paper various works we have performed on the macros...... hiện toàn bộ
#Finite element methods #Stress #Silicon #Manufacturing #Microelectronics #Numerical simulation #Geometry #Numerical models #Electron beams #Predictive models
Statistical fluctuation analysis by Monte Carlo ion implantation method
- Trang 199-202
This paper shows a new statistical fluctuation analysis method by Monte Carlo ion implantation and investigates Vt fluctuations due to statistical variation of dopant profile by 3D process-device simulation system. This method is very useful to analyze a statistical fluctuation in sub-100 nm MOSFETs efficiently.
#Fluctuations #Monte Carlo methods #Ion implantation #Analytical models #Threshold voltage #Semiconductor process modeling #Computational modeling #Implants #Doping profiles #MOSFETs
Simulation of substrate currents
- Trang 79-82
Recently a new approach was presented to determine the high-frequency response of on-chip passive components and interconnects. The method solves the electric scalar and magnetic vector potentials in a prescribed gauge. The latter one is included by introducing an additional independent scalar field, whose field equation needs to be solved. This additional field is a mathematical aid that allows f...... hiện toàn bộ
#Skin effect #Proximity effect #Convergence #Poisson equations #Very large scale integration #Physics #Geometry #Frequency domain analysis #Electrodynamics #Linear systems
Automatic order reduction of thermo-electric model for micro-ignition unit
- Trang 131-134
In this paper we present an automatic, Krylov-subspace-based order reduction of a thermo-electric model, describing a novel type of micropropulsion device. Model order reduction is essential for achieving easily to evaluate, yet accurate macromodel of the device, and Is needed for simulating both the microthruster array and its driving circuitry. We present numerical simulation results of the full...... hiện toàn bộ
#Fuels #Equations #Finite element methods #Reduced order systems #Current #Biomembranes #Ignition #Thermal conductivity #Linear systems #Circuit simulation
Monte Carlo simulation of consecutive implants into SiO/sub 2/ capped Si
- Trang 217-220
The low energy as-implanted profile is very sensitive to the cap oxide layer thickness and PAI conditions. In this work, theoretical and experimental studies have been carried out quantitatively to investigate these dependencies. Using ZBL pair-specific inter-atomic potentials in the Monte Carlo ion implantation simulator, UT-MARLOWE, consecutive implants of PAI and PLDD were simulated and above e...... hiện toàn bộ
#Predictive models #Nuclear electronics #Monte Carlo methods #Microelectronic implants #Circuit simulation #Electrons #Silicon #Artificial intelligence #Instruments #Ion implantation
Mô phỏng số hàm sóng hai hạt trong các dây lượng tử Dịch bởi AI
- Trang 175-178
Vì yêu cầu chính của máy tính lượng tử là việc tạo ra và khai thác sự ràng buộc, một nghiên cứu chi tiết về các trạng thái liên kết đã được thực hiện dựa trên một hệ thống rắn dựa trên các dây lượng tử liên kết. Đầu tiên, một tổng quan ngắn gọn về các cổng cơ bản được cung cấp, dựa trên các nghiên cứu sơ bộ, tiếp theo là phân tích các electron di chuyển dọc theo các dây lượng tử liên kết. Động lực...... hiện toàn bộ
#Numerical simulation #Wave functions #Wires #Electrons #Quantum computing #Quantum entanglement #Schrodinger equation #Coupling circuits #Circuit simulation #Analytical models
A strategy to enforce the discrete minimax principle on finite element meshes
- Trang 183-186
Low quality meshes in three-dimensional finite element diffusion simulations often violate the discrete Minimax principle. An indication of this shortcoming is the occurrence of negative concentrations. We present an a posteriori refinement algorithm to enforce the discrete Minimax principle by locally refining the mesh based on the last time-step. Two examples of diffusion simulations where negat...... hiện toàn bộ
#Minimax techniques #Finite element methods #Iterative algorithms #History #Microelectronics #Diffusion processes #Entropy #Boundary conditions
Self-consistent single-particle simulation
- Trang 159-162
Self-consistent single-particle Monte Carlo device simulations are presented. Self-consistency is achieved by an iterative coupling-scheme of single-particle frozen-field Monte Carlo simulations with solutions of the nonlinear Poisson equation. As an example a realistic 0.1 /spl mu/m n-MOSFET obtained from process simulation with maximum doping levels of about 2.5 /spl times/ 10/sup 20/ cm/sup -3/...... hiện toàn bộ
#Modeling #Doping #Monte Carlo methods #MOSFET circuits #Hydrodynamics #Poisson equations #High definition video #Stability #Systems engineering and theory #Couplings