Modeling of ultra shallow junctions and hybrid source/drain profiles annealed by soak and spike RTA
Tóm tắt
We discuss the 1D/2D modeling of arsenic profiles under soak and spike anneal conditions at both shallow extension and high concentration source/drain areas. This work also addresses the calibration of the phosphorus profile in a hybrid (arsenic + phosphorus) source/drain with various anneal temperatures. It is shown that the "+1" or modified "+n" model is not necessary for shallow arsenic profile modeling under spike anneal conditions. Finally, it is also shown that modeling of the hybrid source/drain profile can be achieved by optimization of the dopant's Fermi level dependent diffusivity, initial value of point defects concentration at equilibrium state, and neglect of implant induced damage.
Từ khóa
#Hybrid junctions #Annealing #Implants #Semiconductor process modeling #Calibration #Doping profiles #CMOS technology #Silicon #Research and development #Pulp manufacturingTài liệu tham khảo
10.1109/SISPAD.2000.871235
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