International Conference on Simulation of Semiconductor Processes and Devices

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On the large-signal CMOS modeling and parameter extraction for RF applications
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 67-70
Minkyu Je, Ickjin Kwon, Jeonghu Han, Hyungcheol Shin, Kwyro Lee
#Semiconductor device modeling #Parameter extraction #Radio frequency #Equivalent circuits #MOSFET circuits #Scattering parameters #Capacitance #Integrated circuit modeling #Circuit simulation #Data mining
Realistic scaling scenario for sub-100nm embedded SRAM based on 3-dimensional interconnect simulation
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 63-66
Y. Tsukamoto, T. Kunikiyo, K. Nii, H. Makino, S. Iwade, K. Ishikawa, Y. Inoue
#Random access memory #CMOS technology #Integrated circuit interconnections #Delay #Parasitic capacitance #Plugs #Circuit simulation #Large scale integration #Ultra large scale integration #Fabrication
Analysis of injection current with electron temperature for high-K gate stacks
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 239-242
Y. Ohkura, H. Takashino, S. Wakahara, K. Nishi
#Electrons #Temperature #High K dielectric materials #High-K gate dielectrics #Current density #Silicon #MOSFETs #Probability #Dielectric constant #Tunneling
Ensemble Monte Carlo/molecular dynamics simulation of inversion layer mobility in Si MOSFETs - effects of substrate impurity
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 25-28
Y. Kamakura, H. Ryouke, K. Taniguchi
#Monte Carlo methods #MOSFETs #Electromagnetic compatibility #Electron mobility #Substrates #Impurities #Particle scattering #Information systems #FETs #Threshold voltage
Finite element analysis of stress evolution in Si based front and back ends micro structures
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 247-252
V. Senez, A. Armigliato, G. Carlotti, G. Carnevale, H. Jaouen, I. de Wolff
#Finite element methods #Stress #Silicon #Manufacturing #Microelectronics #Numerical simulation #Geometry #Numerical models #Electron beams #Predictive models
A new gate current model accounting for a non-Maxwellian electron energy distribution function
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 235-238
A. Gehring, T. Grasser, H. Kosina, S. Selberherr
#Distribution functions #Shape #Tunneling #Monte Carlo methods #MOSFET circuits #Secondary generated hot electron injection #Tail #Lattices #Temperature distribution #Microelectronics
An efficient algorithm for 3D interconnect capacitance extraction considering floating conductors
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 107-110
O. Cueto, F. Charlet, A. Farcy
#Conductors #Dielectrics #Integrated circuit interconnections #Boundary conditions #Parasitic capacitance #Lagrangian functions #Integrated circuit modeling #Circuit simulation #Linear systems #Electric variables
Hot-carrier energy distribution model and its application to the MOSFET substrate current
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 171-173
Chang-sub Lee, Gyoyoung Jin, Keun-ho Lee, Jeong-taek Kong, Won-seong Lee, Yong-han Rho, E.C. Kan, R.W. Dutton
#Hot carriers #MOSFET circuits #Electrons #Impact ionization #Computational modeling #Substrates #High definition video #Integrated circuit modeling #Power engineering and energy #Circuit simulation
"What can computer aided engineering do for the SoC era ?"
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 211-211 - 2002
H. Masuda, M. Orlowski, R.W. Dutton, M. Fukuma, S.-W. Lee, W. Schoenmaker, S. Selberherr, T. Wada
#Computer aided engineering #Timing #National electric code #Process design #Electronics industry #Technological innovation
A new SP (simultaneous polishing) model for copper CMP process
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 257-260
T. Ohta, K. Suzuki
#Copper #Stress #Equations #Accuracy #Testing #Electronic design automation and methodology #Electronic mail #Frequency #Convolution
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