International Conference on Simulation of Semiconductor Processes and Devices
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Investigation of the electron mobility in strained Si/sub 1-x/Ge/sub x/ at high Ge composition
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 29-32
Monte Carlo simulation of the low field electron mobility of strained Si and SiGe active layers on SiGe substrate is considered. The Ge mole fractions of both the active layer and the substrate are varied in a wide range. The linear deformation potential theory is used to calculate the shifts of the conduction band minima due to the uniaxial strain along [001]. The energy shifts and the effective ...... hiện toàn bộ
#Electron mobility #Silicon germanium #Germanium silicon alloys #Capacitive sensors #Effective mass #Scattering #Tensile stress #Conducting materials #Germanium alloys #Monte Carlo methods
Hot-carrier energy distribution model and its application to the MOSFET substrate current
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 171-173
The lack of information for carrier energy distributions in the continuum drift-diffusion (DD) or hydro-dynamic (HD) device simulation has been a major obstacle in simulating the physical phenomena related to hot carriers. In this study, a practical construction method of the hot-carrier energy distribution is proposed. Results from Monte-Carlo (MC) simulation in the uniform field distribution are...... hiện toàn bộ
#Hot carriers #MOSFET circuits #Electrons #Impact ionization #Computational modeling #Substrates #High definition video #Integrated circuit modeling #Power engineering and energy #Circuit simulation
Surface mobility in silicon at large operating temperature
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 15-20
An experimental investigation on high-temperature carrier mobility in silicon inversion layers is carried out with the aim of improving our understanding of carrier transport at the onset of second breakdown. Special MOSFET structures suitable for Hall measurements were designed and manufactured using the BCD-3 technology available at ST-Microelectronics. Hall measurements were carried out using a...... hiện toàn bộ
#Silicon #Testing #Temperature distribution #Electric breakdown #MOSFET circuits #Temperature control #Manufacturing #Microelectronics #Impurities #Lattices
Simulation and inverse modeling of TEOS deposition processes using a fast level set method
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 191-194
Deposition and etching of silicon trenches is an important manufacturing step for state of the art memory cells. Understanding and simulating the transport of gas species and surface evolution enables to achieve void-less filling of deep trenches, to predict the resulting profiles, and thus to optimize process parameters with respect to manufacturing throughput and the quality of the resulting mem...... hiện toàn bộ
#Inverse problems #Level set #Predictive models #Computational modeling #Scanning electron microscopy #Etching #Silicon #Filling #Manufacturing processes #Virtual manufacturing
2002 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD 2002 (IEEE Cat. No.02TH8621)
International Conference on Simulation of Semiconductor Processes and Devices - - Trang i-xiv - 2002
Conference proceedings front matter may contain various advertisements, welcome messages, committee or program information, and other miscellaneous conference information. This may in some cases also include the cover art, table of contents, copyright statements, title-page or half title-pages, blank pages, venue maps or other general information relating to the conference that was part of the ori...... hiện toàn bộ
Quantum transport modeling in nano-scale devices
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 261-266
We present results and describe progress we have made in the development of our quantum transport modeling for nanoscale devices. Our simulation is based upon either the nonequilibrium Green's function method (NEGF) or the quantum correction (QC) associated with the density gradient method (DG) and/or the effective potential method (EP). We show the results of our modeling methods applied to sever...... hiện toàn bộ
#Nanoscale devices #Quantum mechanics #Integrated circuit modeling #Atomic layer deposition #MOSFETs #Tunneling #Analytical models #Electrons #Green's function methods #Diodes
Drift-diffusion-based modeling of the non-quasistatic small-signal response for RF-MOSFET applications
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 71-74
A non-quasistatic MOSFET model for the small-signal response is developed by including the continuity equation in an analytical way. This model developed based on the drift-diffusion approximation enables us to predict the high-frequency response for any bias conditions. Our result shows that the quasistatic approximation calculates the response approximately correct up to f/sub T//2, which is muc...... hiện toàn bộ
#Circuit simulation #Equivalent circuits #Poisson equations #MOSFET circuits #Intrusion detection #Threshold voltage #Predictive models #Cutoff frequency #Current density #Capacitance
On density-gradient modeling of tunneling through insulators
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 275-278
The density gradient model (DG) is tested for its ability to describe tunneling currents through thin insulating barriers. Simulations of single barriers (MOS diodes, MOSFETs) and double barriers show the limitations of the DG model. As a reference the Schrodinger-Bardeen method is taken. 'Resonant tunneling' in the density gradient model turns out to be an artifact related to large density differ...... hiện toàn bộ
#Tunneling #Insulation #MOSFETs #Charge carrier processes #Modeling #Schrodinger equation #Partial differential equations #Poisson equations #Laboratories #Electronic mail
Simulation of substrate currents
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 79-82
Recently a new approach was presented to determine the high-frequency response of on-chip passive components and interconnects. The method solves the electric scalar and magnetic vector potentials in a prescribed gauge. The latter one is included by introducing an additional independent scalar field, whose field equation needs to be solved. This additional field is a mathematical aid that allows f...... hiện toàn bộ
#Skin effect #Proximity effect #Convergence #Poisson equations #Very large scale integration #Physics #Geometry #Frequency domain analysis #Electrodynamics #Linear systems
Simulation of a "Well Tempered" SOI MOSFET using an enhanced hydrodynamic transport model
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 195-198
Anomalous output characteristics are observed in hydrodynamic simulations of partially depleted SOI MOSFETs. The effect that the drain current reaches a maximum and then decreases is peculiar to the hydrodynamic transport model. It is not observed in drift-diffusion simulations and its occurrence in measurements is questionable. An explanation of the cause of this effect is given, and a solution i...... hiện toàn bộ
#MOSFET circuits #Hydrodynamics #High definition video #Equations #Ocean temperature #Hot carriers #Computational modeling #Microelectronics #Voltage #Current measurement
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