International Conference on Simulation of Semiconductor Processes and Devices

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On the large-signal CMOS modeling and parameter extraction for RF applications
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 67-70
Minkyu Je, Ickjin Kwon, Jeonghu Han, Hyungcheol Shin, Kwyro Lee
A small-signal equivalent circuit of an RF MOSFET not only fully compatible with 4 terminal large-signal quasi-static I-V and Q-V models but suitable for 3 terminal two-port s-parameter measurement, is proposed along with very simple and accurate parameter extraction method. This model includes the intrinsic and extrinsic elements important for AC simulation at RF. The validity and accuracy of our...... hiện toàn bộ
#Semiconductor device modeling #Parameter extraction #Radio frequency #Equivalent circuits #MOSFET circuits #Scattering parameters #Capacitance #Integrated circuit modeling #Circuit simulation #Data mining
Analysis of injection current with electron temperature for high-K gate stacks
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 239-242
Y. Ohkura, H. Takashino, S. Wakahara, K. Nishi
Though, high dielectric constant material is a possible near future candidate to suppress gate current densities of MOSFETs, the barrier height generally decreases with increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W.K.B. method to understand the impact of the injection curre...... hiện toàn bộ
#Electrons #Temperature #High K dielectric materials #High-K gate dielectrics #Current density #Silicon #MOSFETs #Probability #Dielectric constant #Tunneling
An efficient algorithm for 3D interconnect capacitance extraction considering floating conductors
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 107-110
O. Cueto, F. Charlet, A. Farcy
With the inclusion of floating conductors in integrated circuits, conventional simulation tools exhibit prohibitive calculation times. A new simulation tool, called ICARE, was developed to extract efficiently the 3D capacitance matrix of interconnect structures embedded in a multi-layered dielectric environment. Using the so-called fictitious domain method, it leads to a coupled linear system, wit...... hiện toàn bộ
#Conductors #Dielectrics #Integrated circuit interconnections #Boundary conditions #Parasitic capacitance #Lagrangian functions #Integrated circuit modeling #Circuit simulation #Linear systems #Electric variables
Author index
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 283-284 - 2002
The author index contains an entry for each author and coauthor included in the proceedings record.
Perspectives in microscopic carrier transport
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 1-4
T. Ando
A brief review is given of recent investigation of transport properties of nanostructures from semiconductor quantum wires and dots to artificial crystals with exotic electronic properties including carbon nanotubes as an example. The purpose of this review is to discuss some examples of recent developments and the future outlook in the investigation of transport properties of these systems.
#Microscopy #Quantum dots #Wires #Electron emission #Physics #Hall effect #Lattices #Energy states #Ballistic transport #Immune system
Integrated TCAD and ECAD solutions - a paradigm shift
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 5-8
Shiuh-Wuu Lee
This paper highlights the emerging need for selective integration of physical-model based TCAD modeling and simulation tools that have been mostly applied to technology development with ECAD tools that have been traditionally used for product design. The emerging technology trends that lead to this paradigm shift are highlighted. The architecture and requirements of integrated TCAD-ECAD solutions ...... hiện toàn bộ
#Electronic design automation and methodology #Product design #Numerical models #Solid modeling #Lithography #Integrated circuit interconnections #Frequency #Educational institutions #P-n junctions #Energy consumption
Nanoelectronic 3-D (NEMO 3-D) simulation of multimillion atom quantum dot systems
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 163-166
F. Oyafuso, G. Klimeck, R.C. Bowen, T.B. Boykin
The convergence of electron and hole ground states of a dome-shaped In/sub 0.6/Ga/sub 0.4/As quantum dot as a function of the size of the surrounding buffer is explored within an sp/sup 3/d/sup 5/s* tight binding model. It is found that although the quantum dot encompasses only 2 /spl times/ 10/sup 5/ atoms, proper convergence of ground state eigenenergies requires that over 10 times as many atoms...... hiện toàn bộ
#Quantum dots #US Department of Transportation #Stationary state #Computational modeling #Convergence #Propulsion #Laboratories #Electronic mail #Charge carrier processes #Boundary conditions
Gate tunnelling and impact ionisation in sub 100 nm PHEMTs
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 139-142
K. Kalna, A. Asenov
Impact ionization and thermionic tunnelling as two possible breakdown mechanisms in scaled pseudomorphic high electron mobility transistors (PHEMTs) are investigated by Monte Carlo (MC) device simulations. Impact ionization is included in MC simulation as an additional scattering mechanism whereas thermionic tunnelling is treated in the WKB approximation during each time step in selfconsistent MC ...... hiện toàn bộ
#Tunneling #Impact ionization #PHEMTs #Threshold voltage #Electric breakdown #Electron mobility #HEMTs #MODFETs #Monte Carlo methods #Scattering
Wigner transport through tunneling structures scattering interpretation of the potential operator
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 187-190
M. Nedjalkov, R. Kosik, H. Kosina, S. Selberherr
A stochastic method for simulation of quantum transport in nanoscale electronic devices is proposed. The interaction with the Wigner potential is interpreted as a scattering mechanism, which is a counterpart to the scattering mechanisms due to the lattice imperfections. The derived quantum Monte Carlo algorithm retains the basic features of the Single Particle Monte Carlo method used for simulatio...... hiện toàn bộ
#Tunneling #Particle scattering #Stochastic processes #Monte Carlo methods #Phonons #Integral equations #Microelectronics #Nanoscale devices #Lattices #Fourier transforms
Surface mobility in silicon at large operating temperature
International Conference on Simulation of Semiconductor Processes and Devices - - Trang 15-20
S. Reggiani, A. Valdinoci, L. Colalongo, M. Rudan, G. Baccarani, A. Stricker, F. Illien, N. Felber, W. Fichtner, S. Mettler, S. Lindenkreuz, L. Zullino
An experimental investigation on high-temperature carrier mobility in silicon inversion layers is carried out with the aim of improving our understanding of carrier transport at the onset of second breakdown. Special MOSFET structures suitable for Hall measurements were designed and manufactured using the BCD-3 technology available at ST-Microelectronics. Hall measurements were carried out using a...... hiện toàn bộ
#Silicon #Testing #Temperature distribution #Electric breakdown #MOSFET circuits #Temperature control #Manufacturing #Microelectronics #Impurities #Lattices
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