Analysis of injection current with electron temperature for high-K gate stacks
Tóm tắt
Though, high dielectric constant material is a possible near future candidate to suppress gate current densities of MOSFETs, the barrier height generally decreases with increasing dielectric constant. In this paper, the injection current through gate stacks has been calculated while taking into account the electron temperature using the W.K.B. method to understand the impact of the injection current from the drain edge.
Từ khóa
#Electrons #Temperature #High K dielectric materials #High-K gate dielectrics #Current density #Silicon #MOSFETs #Probability #Dielectric constant #TunnelingTài liệu tham khảo
robertson, 1999, MRS Fall Meeting, 10
shiely, 1999, Simulation of tunneling in MOS devices
10.1109/16.870561
lee, 2000, 4th Annual Topical Research Conference on Reliability