On the large-signal CMOS modeling and parameter extraction for RF applications
Tóm tắt
A small-signal equivalent circuit of an RF MOSFET not only fully compatible with 4 terminal large-signal quasi-static I-V and Q-V models but suitable for 3 terminal two-port s-parameter measurement, is proposed along with very simple and accurate parameter extraction method. This model includes the intrinsic and extrinsic elements important for AC simulation at RF. The validity and accuracy of our approach is verified from 0.18 /spl mu/m RF NMOS results.
Từ khóa
#Semiconductor device modeling #Parameter extraction #Radio frequency #Equivalent circuits #MOSFET circuits #Scattering parameters #Capacitance #Integrated circuit modeling #Circuit simulation #Data miningTài liệu tham khảo
lee, 1997, IEEE MGWL, 7, 75
10.1109/16.704377
root, 1992, IEEE MIT-S, 255
kwon, 2000, ESSCIRC, 296
koolen, 1991, IEEE BCTM, 188
han, 2002, IEEE EDL
darnbrine, 1998, IEEE TMTT, 36, 173
lovelace, 1994, IEEE MTT-S, 865