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Supercritical Fluid Applications in Advanced Materials Processing
Springer Science and Business Media LLC - Tập 121 Số 1 - Trang 711-716 - 1988
Wagner, Richard A., Krukonis, Val J., Coffey, Michael P.
The feasibility of using supercritical fluids to impregnate carbon/carbon composites with a ceramic precursor was successfully demonstrated. Improvements in mechanical properties and oxidation resistance were correlated with the distribution of silicon within the microstructure of the composites. In addition, supercritical fluids were also used to fractionate silicon carbide precursors and thereby...... hiện toàn bộ
Electrical and Optical Properties of Yb, Er doped GaAs
Springer Science and Business Media LLC - Tập 301 - Trang 163-168 - 2020
T. Benyattou, D. Seghier, G. Brémond, S. Moneger, A. Kalboussi, G. Marrakchi, G. Guillot, C. Lhomer, B. Lambert, Y. Toudic, A. Le Corre
In this paper we report results from electrical and optical measurements carried out on GaAs:Yb, Er. For GaAs:Yb electrical experiments such as photoconductivity (PC) and Photo Induced Current Transient Spectroscopy (PICTS) show that there is a level at 0.65eV related to Yb. This explains why no Yb3+ photoluminescence (PL) emission is detected, the recombination energy of the trapped excitons is t...... hiện toàn bộ
Deep Level Characterization and Passivation in Heteroepitaxial InP
Springer Science and Business Media LLC - Tập 325 - Trang 125-130 - 1993
B. Chatterjee, S. A. Ringel, R. Sieg, I. Weinberg, R. Hoffman
Deep levels in MOCVD grown p-InP on GaAs substrates have been investigated by Deep Level Transient Spectroscopy (DLTS). The effect of hydrogenation on the electrical activity of these levels has been studied through a combination of DLTS and Photolu-minescence (PL) measurements. DLTS measurements indicate a drop of trap density from ~ 5 × 1014 cm−3 to ~ 1 × 1012 cm−3 after hydrogenation. Annealing...... hiện toàn bộ
Electric Field Direct Force in Electromigration Mechanism
Springer Science and Business Media LLC - Tập 516 - 1998
А. А. Карпушин, A. V. Sorokin, M. R. Baklanov, Karen Maex
AbstractThe direct influence of the applied electric field on ions of lattice, as a whole, was considered. This influence induces the strains and stresses and its gradients. In turn, this additional stresses may induce the vacancy (ion) diffusion flux. It is shown that this flux coincides in the direction and is comparable in magnitude with the electromigration flu...
Ảnh hưởng của việc bị bịt kín Gallium Arsenide đến phát quang do Kính hiển vi quét lượng tử kích thích Dịch bởi AI
Springer Science and Business Media LLC - Tập 380 - Trang 119-124 - 2011
E. E. Reuter, S. Q. Gu, P. W. Bohn, J. F. Dorsten, G. C. Abeln, J. W. Lyding, S. G. Bishop
Kính hiển vi quét lượng tử (STM) trong môi trường đã được sử dụng để kích thích phát quang trong GaAs epitaxy loại p với bốn phương pháp chuẩn bị bề mặt riêng biệt: GaAs chưa bị xử lý, lớp Au, lớp sulfurmonochloride, và một lớp đơn của octadecyl-thiol. STM với đầu tungsten hoạt động ở dòng điện hầm không đổi 5 nA trong khi một điện áp +1 V được áp dụng cho mẫu và khoảng cách từ đầu đến mẫu được cố...... hiện toàn bộ
#Gallium Arsenide #quét tunneling #kích thích phát quang #photoluminescence #bề mặt bị bịt kín
Raman Scattering Spectra in Be-Implanted GaN Epilayers
Springer Science and Business Media LLC - Tập 719 - Trang 8281-8284 - 2011
L. S. Wang, W. H. Sun, S. J. Chua
Ion-implantation has been an interesting topic on impurity-doping in GaN. Raman measurement is a strong tool for the characterization of semiconductors. We have investigated the Raman scattering spectra in Be-implanted GaN epilayers. In as-implanted GaN, new Raman bands at ∼310, ∼360, 669 cm−1 appeared. From phonon-dispersion curves for hexagonal GaN, the ∼300 cm−1 and 669 cm−1 bands were assigned...... hiện toàn bộ
Characterization of Chemical Bonding in Low-K Dielectric Materials for Interconnect Isolation: A XAS and EELS Study
Springer Science and Business Media LLC - - 2006
Patrick Hoffmann, Dieter Schmeißer, Hans-Juergen Engelmann, Ehrenfried Zschech, Heiko Stegmann, F. J. Himpsel, Jonathan D. Denlinger
AbstractThe use of low dielectric constant materials in the on-chip interconnect process reduces interconnect delay, power dissipation and crosstalk noise. To achieve the requirements of the ITRS for 2007-2009 minimal sidewall damage from etch, ash or cleans is required. In chemical vapor deposited (CVD) organo-silicate glass (OSG) which are used as intermetal diel...... hiện toàn bộ
X-Ray Scattering Studies of Thin Films and Multilayers
Springer Science and Business Media LLC - Tập 151 - Trang 231-242 - 2012
G. S. Cargill
X-ray scattering experiments provide important information about the atomic scale structure and the microstructure of thin films and multilayers. The high intensity, brightness, and broad energy spectrum of synchrotron radiation greatly extend capabilities of scattering experiments, particularly for scattering from ultrathin films and for anomalous dispersion scattering from alloys. Examples of sc...... hiện toàn bộ
MOCVD Precursor Delivery Monitored and Controlled Using UV Spectroscopy
Springer Science and Business Media LLC - Tập 474 - Trang 69-75 - 1997
Brian J. Rappoli, William J. DeSisto, Tobin J. Marks, John A. Belot
The glyme adducts of bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionate)barium, Ba(hfac)2·glyme, are frequently employed as precursors in the MOCVD fabrication of HTSC thin films. The physical properties of these precursors can be modified by changing the glyme ligand in the barium complex. In this study, gas phase concentrations of two barium complexes as a function of purge time and bubbler temperatu...... hiện toàn bộ
Change of Ms Temperatures and its Correlation to Atomic Configurations of Offstoichiometric NiTi-Cr and NiTi-Co Alloys
Springer Science and Business Media LLC - Tập 459 - Trang 287-293 - 1996
Hideki Hosoda, Toshihiko Fukul, Kanryu Inoue, Yoshinao Mishima, Tomoo Suzuki
Effects of compositional deviation from the stoichiometry and Cr and Co additions on martensitic-transformation-slart and auslenite-start temperatures (Ms and As) of offstoichiometric NiTi alloys are investigated. Ms and As are determined using conventional differential thermal analysis (DTA), where the temperature range investigated is between 77K and 423K. Alloys are widely chosen with both Ni- ...... hiện toàn bộ
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