Springer Science and Business Media LLC

Công bố khoa học tiêu biểu

* Dữ liệu chỉ mang tính chất tham khảo

Sắp xếp:  
Ring-Related Defects in MCZ Wafer Comparison by Electrical, Structural, and Device Properties
Springer Science and Business Media LLC - Tập 469 - Trang 119-124 - 1997
F. González, M. McQueen, R. Barbour, G. A. Rozgonyi
Thermal cycles in advanced CMOS processing can nucleate an annular ring of oxygen precipitate-induced stacking faults (OSF-ring) via activation of bulk nuclei grown-in during the crystal pulling process. Because the OSF-ring can adversely affect device characteristics, it is important that substrates with OSF-ring characteristics be detected early in the process. Results are presented in this paper from a typical DRAM device which show that the ring can act either in a beneficial gettering mode or as a device-degrading zone, depending on the depth distribution of the OSF-ring defects and the background iron impurity concentration.
Photoemission Study of the a-Si-H/a-SiOx:H and a-Si:H/a-SiN:H Interface Formation
Springer Science and Business Media LLC - Tập 77 - Trang 647-652 - 2011
W. Eberhardt, B. Abeles, L. Yang, H. Stasiewski, D. Sondericker
We report a study of the interface formation between a-Si:H and a-SiOx:H or a-SiN:H in the coverage regime from a submonolayer to a few layers. The films were grown by plasma assisted CVD and characterized by photoemission. Our studies show that the growth mechanism is different for a-SiOx:H on a-Si:H than for a-Si:H on a a-Si:Ox:H. The growth of the a-SiNx:H/a-Si:H interface on the other hand is independent of the direction.
Molecular Dynamics Simulations of Nanoindentation of Silicon Nitride
Springer Science and Business Media LLC - Tập 539 - 1998
Philip Walsh, Andrey Omeltchenko, Hideaki Kikuchi, Rajiv K. Kalia, Aiichiro Nakano, Priya Vashishta
Abstract

This is a report of work in progress on 10 million atom Molecular Dynamics (MD) simulations of nanoindentation of crystalline and amorphous silicon nitride (Si3N4). Nanoindentation is used to determine mechanical properties of extremely thin films such as hardness and elastic moduli. We report load-displacement curves for several Si3N4 configurations using an idealized non-deformable indenter and analyze the local stress distributions in the vicinity of the indenter tip. Preliminary results for surface adhesion using Si3N4 for both tip and substrate are also reported.

Porous Thin-Film Anode Materials for Solid-Oxide fuel Cells
Springer Science and Business Media LLC - Tập 575 - Trang 321-324 - 1999
Jeffrey D. Morse, Robert T. Graff, Jeffrey P. Hayes, Alan F. Jankowski
Thin film, solid-oxide fuel cells (TFSOFCs) synthesized from an electrolyte and conductive material are developed using photolithographic patterning and physical vapor deposition. The anode layer must enable combination of the reactive gases, be conductive to pass the electric current, and provide mechanical support to the electrolyte and cathode layers. The microstructure and morphology desired for the anode layer should facilitate generation of maximum current density from the fuel cell. For these purposes, the parameters of the deposition process and post-deposition patterning are developed to optimize a continuous porosity across the anode layer. The anode microstructure is characterized using scanning electron microscopy and the power ouput generated through current-voltage measurement.
Temperature Dependent Micro-Raman Scattering of Sr0.35Ba0.65TiO3 Film Grown by Pulsed Laser Deposition
Springer Science and Business Media LLC - Tập 401 - Trang 177-182 - 2011
Sampriti Sen, E. Ching-Prado, A. Reynés-Figueroa, R. S. Katiyar, J. S. Horwitz, L. A. Knauss
A film of Sr0.35Ba0.65TiO3 (SBT) has been grown in situ by pulsed laser deposition on (001) LaAlO3 single crystal. From X-ray diffraction studies the sample is found to be in single phase and well oriented. Raman spectrum of the SBT film shows bands around 178, 219, 296, 513, 571 and 741 cm”. The spectrum is similar to that found in SBT ceramic material, but the frequencies of the phonons are shifted. This can be explained if the film is under stress due to the presence of defects. The bands at 296 and 741cm−1 correspond to the B1 and A1(LO) normal modes of the BaTiO3 (BT) system, and they are representative of the BT tetragonal phase, which at first glance appears to contradict earlier structural symmetry assignment for SBT(x=0.35) film at room temperature. Micro-Raman measurements from different regions of the film indicate that the SBT film is homogeneous. The bands at 296 and 741 cm−1 are broader in comparison to those in BT single crystal and SBT ceramic material. Temperature dependent halfwidths of these modes suggest strong contribution of defects. Temperature dependent results are discussed in terms of anharmonic contributions involving three and four phonon processes as well as defects. Also, the orthorhombic and rhombohedral phase transitions are discussed. Finally, SEM/EDAX and FT-IR techniques have been used for the structural characterization.
Materials Processing through Levitation in High Gas Pressure
Springer Science and Business Media LLC - Tập 251 - Trang 47-51 - 1991
Makoto Nanko, K. Ishizaki
New levitation materials processing on the ground was developed using high gas pressure. Conventional levitation materials processes are carried out in microgravity fields, such as in space or in free-falling, or by applying aerodynamic force, electromagnetic force etc.. This innovated method is based on buoyancy by very high density of high pressure gas. Advantages of this new method are not only as a containerless processing which is able to prepare high purity materials, to produce perfect spheres, but also the possibility to use normal HIP techniques. It is expected that the new processing is applicable in many fields and easy to commercialize.
A New Role for Engineering Educators: Managing for Team Success
Springer Science and Business Media LLC - Tập 632 - 2000
Debra Larson
ABSTRACT

For a variety of reasons, collaborative learning teams, project teams or design teams are now a part of undergraduate engineering education. In response, the current education-related literature is flourishing with team-type topics that include when and why teams, team dynamics, and how to structure teams. Almost non-existent, however, are discussions about the role and impact of the faculty member in and on student teams.

Extrapolating from the professional project management literature, project and team success is heavily influenced by positive management. Businesses that fail to train and reinforce positive management run unacceptable risks. The risks to us as educators, who use teams in less than ideal situations, include a lack of learning, project failure, and dysfunctional teams that foster an aversion to teams. This is in direct contrast to what we hoped and what we have been asked to do, which is to provide an understanding about the power of teams, to develop teaming skills, to enable design successes, and to enhance the learning.

Proper management of student teams requires skills and strategies that are much different from those that most faculty members are experienced with. The strategies include planning for and implementing an understood work process, providing a suitable organization compatible to that process, structuring and communicating with the team, and holding the individual accountable. The skills start with two risk taking beliefs: (1) you do not have to have all the answers and (2) it is not you against them, but about you with them. With the right attitude, the skills of leading by example, guiding towards peak performance, and managing for optimal team experiences follow.

Influence of Deposition Parameters on the Morphology of CdTe Films and on the Performance of CdTe Solar Cells
Springer Science and Business Media LLC - Tập 1012 - Trang 1-6 - 2007
Mathias Hädrich, Sebastian Mack, Heinrich Metzner, Udo Reislöhner, Wolfgang Witthuhn
For industrial CdTe solar cell production, thin, dense and pinhole-free films have to be deposited at high rates. Using a close-to-industrial close space sublimation (CSS) process, we deposited CdTe films at different temperatures and rates. The morphology of these films was analyzed by scanning electron microscopy (SEM) and x-ray diffraction (XRD). The measurements show the size, size distribution and orientation of the grains to strongly depend on deposition temperature and rate. A suitable combination of these parameters yields large grains of about 3 microns diameter even for deposition temperatures below 750 K and at high deposition rates of 3 microns per minute. The interplay of CdTe layer morphology and solar cell performance is elucidated employing a TCO-CdS-CdTe-Mo film sequence for complete solar cells.
The Chemistry of Oxygen in Silicon
Springer Science and Business Media LLC - - 1984
J. C. Mikkelsen
ABSTRACT

Some of the key issues involving the chemistry of oxygen in silicon crystals are presented in this paper. The incorporation of oxygen into Czochralski-grown ingots from melt contact with silica crucibles is described in the context of the Si-SiO2 phase diagram. The techniques for characterizing oxygen in silicon are reviewed, with an emphasis on the use of secondary ion mass spectrometry (SIMS) and 18O isotope substitution. The intrinsic diffusivity and solubility of oxygen in silicon derived from these SIMS measurements are compared to similar results from other techniques as well as related extrinsic behavior of oxygen. Aggregation phenomena involving oxygen, including thermal donor formation and precipitation are discussed. Finally, the recent progress in understanding internal gettering and shear stress are summarized.

Tổng số: 47,325   
  • 1
  • 2
  • 3
  • 4
  • 5
  • 6
  • 10