Springer Science and Business Media LLC

Công bố khoa học tiêu biểu

* Dữ liệu chỉ mang tính chất tham khảo

Sắp xếp:  
Electrical and Optical Properties of Yb, Er doped GaAs
Springer Science and Business Media LLC - Tập 301 - Trang 163-168 - 2020
T. Benyattou, D. Seghier, G. Brémond, S. Moneger, A. Kalboussi, G. Marrakchi, G. Guillot, C. Lhomer, B. Lambert, Y. Toudic, A. Le Corre
In this paper we report results from electrical and optical measurements carried out on GaAs:Yb, Er. For GaAs:Yb electrical experiments such as photoconductivity (PC) and Photo Induced Current Transient Spectroscopy (PICTS) show that there is a level at 0.65eV related to Yb. This explains why no Yb3+ photoluminescence (PL) emission is detected, the recombination energy of the trapped excitons is t...... hiện toàn bộ
X-Ray Scattering Studies of Thin Films and Multilayers
Springer Science and Business Media LLC - Tập 151 - Trang 231-242 - 2012
G. S. Cargill
X-ray scattering experiments provide important information about the atomic scale structure and the microstructure of thin films and multilayers. The high intensity, brightness, and broad energy spectrum of synchrotron radiation greatly extend capabilities of scattering experiments, particularly for scattering from ultrathin films and for anomalous dispersion scattering from alloys. Examples of sc...... hiện toàn bộ
MOCVD Precursor Delivery Monitored and Controlled Using UV Spectroscopy
Springer Science and Business Media LLC - Tập 474 - Trang 69-75 - 1997
Brian J. Rappoli, William J. DeSisto, Tobin J. Marks, John A. Belot
The glyme adducts of bis(1,1,1,5,5,5-hexafluoro-2,4-pentanedionate)barium, Ba(hfac)2·glyme, are frequently employed as precursors in the MOCVD fabrication of HTSC thin films. The physical properties of these precursors can be modified by changing the glyme ligand in the barium complex. In this study, gas phase concentrations of two barium complexes as a function of purge time and bubbler temperatu...... hiện toàn bộ
Combined Tem and X-Ray Topographic Characterization of InxGa1-xAs/GaAs Strained Layer Systems.
Springer Science and Business Media LLC - Tập 209 - Trang 655-660 - 1990
Michael Dudley, Gong-Da Yao, David Paine, David Howard, Robert N. Sacks
Novel application of a combination of TEM and non-destructive synchrotron X-ray topography in both Bragg and grazing Bragg-Laue geometries to the characterization of InxGa1-xAs/GaAs strained layer films is reported. Specialized epilayer lift-off procedures enabled TEM characterization of the defect distributions in macroscopic area films, effectively increasing the field of view of the technique b...... hiện toàn bộ
Tribological Properties of Iron Powder Subjected to Various Surface Treatments
Springer Science and Business Media LLC - Tập 522 - 1998
Anders Meurk, Ian Larson, Lennart Bergström
Analysis of Ferroelectric Switching Process in VDF/Trfe Copolymers
Springer Science and Business Media LLC - Tập 600 - 1999
Kenji Kano, Hidekazu Kodama, Yoshiyuki Takahashi, T. Furukawa
AbstractThe ferroelectric switching curve of vinylidene fluoride / trifluoroethylene copolymer exhibits a characteristic time evolution consisting of two processes; an initial gradual increase in proportion to t0 5 followed by a rapid increase according to an exponential function with particularly large exponent 6. Su...... hiện toàn bộ
Optoelectronic Properties of a-Si:H Films Deposited from He-Diluted Silane
Springer Science and Business Media LLC - Tập 297 - Trang 73-78 - 1993
C. Swiatkowski, P. Roca i Cabarrocas, M. Kunst
In-situ and ex-situ transient photoconductivity measurements of intrinsic a-Si:H films deposited from He-diluted SiH4 are presented. It is shown that material with good optoelectronic properties can be deposited at high deposition rates. The films can already be characterized during the deposition. It is shown that material with fairly different properties can be deposited with a relative low defe...... hiện toàn bộ
The Effects of Environment on the Room Temperature Deformation of B2-Structured Fe-43Al Single-Crystals
Springer Science and Business Media LLC - Tập 646 - Trang 269-275 - 2001
I. Baker, D. Wu, E. P. George
The effects of the environment on the room temperature mechanical behavior of Fe-43Al single crystals have been studied. In both single slip and duplex slip crystals, fracture strains greater than 40% were obtained in specimens tested in oxygen, whereas elongations of ~10% and ~20% were obtained in air and vacuum, respectively. By comparison, similar elongations were obtained in boron-doped single...... hiện toàn bộ
The Effect of Grain Boundary Chemistry on the Slip Transmission Process Through Grain Boundaries in Ni3Al
Springer Science and Business Media LLC - Tập 238 - Trang 357-367 - 1991
I. M. Robertson, T. C. Lee, Raja Subramanian, H. K. Birnbaum
The conditions established in disordered FCC systems for predicting the slip system that will be activated by a grain boundary to relieve a local stress concentration have been applied to the ordered FCC alloy Ni3Al. The slip transfer behavior in hypo-stoichiometric Ni3Al with (0.2 at. %B) and without boron was directly observed by performing the deformation experiments in situ in the transmission...... hiện toàn bộ
Pulse Diffused N+ Layers in GaAs
Springer Science and Business Media LLC - Tập 1 - Trang 247-253 - 2011
D. Eirug Davies, T. G. Ryan, J. P. Lorenzo, E. F. Kennedy
Pulse diffusion has been used for doping GaAs n-type to over 1019 cm−3. Surface arsenic loss is avoided through using As2Se3 as the diffusion source. A reduction in electrical activity similar to that reported for pulse annealed implanted layers occurs with any subsequent heat treatment. A resistive region, found at the surface of the profile, can be circumvented through additionally heating the G...... hiện toàn bộ
Tổng số: 47,314   
  • 1
  • 2
  • 3
  • 4
  • 5
  • 6
  • 10