Proceedings, IEEE Tenth International Conference on Terahertz Electronics

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THz 2002. 2002 IEEE Tenth International Conference on Terahertz Electronics Proceedings (Cat. No.02EX621)
Proceedings, IEEE Tenth International Conference on Terahertz Electronics - - 2002
Presents the front cover of the proceedings record.
Far-infrared spectroscopy of hydrogen bonding in nucleobases, nucleosides, and nucleotides
Proceedings, IEEE Tenth International Conference on Terahertz Electronics -
B. Fischer, M. Walther, P.U. Jepsen
The far-infrared dielectric properties of organic acids and bases in the condensed phase are dominated by hydrogen bonding between the individual molecules. We have investigated the dielectric properties of nucleobases, nucleosides, and nucleotides. We find that at cold temperatures distinct vibrational modes are present in the frequency range 0.1-4 THz. These modes originate from ordered hydrogen...... hiện toàn bộ
#Spectroscopy #Hydrogen #Bonding #DNA #Electromagnetic wave absorption #Pulse shaping methods #Dielectrics #Temperature distribution #Frequency #Molecular biophysics
Phát triển cấu trúc klystron phản xạ sóng siêu nhỏ Dịch bởi AI
Proceedings, IEEE Tenth International Conference on Terahertz Electronics -
J.R. Thorpe, J.R. Fletcher, J.M. Chamberlain, R.E. Miles, J. Garcia-Garcia, C.J. Mann, E. Huq, M. Oldfield, J. Spencer
Bài báo mô tả quá trình phát triển cấu trúc klystron phản xạ sóng siêu nhỏ được vi gia công. Một phân tích tổng quan về những vấn đề lý thuyết chính, chẳng hạn như dao động và điều kiện khởi động, cũng như cách mà công suất đầu ra tỷ lệ với tần số. Hai kỹ thuật để hiện thực hóa lắp ráp khoang cộng hưởng được nêu ra. Phương pháp được ưa chuộng dẫn đến khoang tái nhập bằng vàng có thể đứng riêng biệ...... hiện toàn bộ
#Klystrons #Radio frequency #Electrons #Micromachining #Optical modulation #Resonance #Assembly #Gold #Astronomy #Low voltage
Novel concept for THz-photomixer based on periodically doped heterostructures and quasi ballistic transport
Proceedings, IEEE Tenth International Conference on Terahertz Electronics -
M. Eckardt, A. Schwanhausser, F. Renner, L. Robledo, A. Friedrich, P. Pohl, P. Kiesel, S. Malzer, G.H. Dohler, D. Driscoll, M. Hanson, A.C. Gossard
Reports on a new concept for THz photomixers, which are not (as usually) frequency limited by the carrier lifetime in low-temperature-grown GaAs. The concept is based on ballistic electron transport in a periodically doped heterostructure (p-i-n-p-i-n-superlattice) and allows for impedance matching to the attached antenna.
#Gallium arsenide #Charge carrier processes #Spontaneous emission #Ballistic transport #Frequency #Charge carrier lifetime #Electron mobility #Space charge #Power lasers #Impedance matching
Coherent and incoherent intersubband dynamics
Proceedings, IEEE Tenth International Conference on Terahertz Electronics -
T. Muller, R. Bratschitsch, W. Parz, G. Strasser, K. Unterrainer
Presents time-resolved measurements of photoinduced intersubband absorption in an undoped GaAs/AlGaAs coupled quantum well excited by an ultrashort interband optical pulse. An interband pump pulse injects electrons into the first and second subband of an undoped asymmetric double quantum well (ADQW) with a level spacing smaller than the LO phonon energy. The time evolution of the electron populati...... hiện toàn bộ
#Quantum cascade lasers #Optical pulses #Pulse measurements #Probes #Gallium arsenide #Optical pulse generation #Substrates #Zinc compounds #Laser beams #Absorption
Terahertz intersubband emission from silicon-germanium quantum cascades
Proceedings, IEEE Tenth International Conference on Terahertz Electronics -
R.W. Kelsall, Z. Ikonic, P. Harrison, S.A. Lynch, R. Bates, D.J. Paul, D.J. Norris, San Lin Liew, A.G. Cullis, D.J. Robbins, P. Murzyn, C.R. Pidgeon, D. D Arnone
Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si/sub 0.76/Ge/sub 0.24//Si heterostructures grown on a Si/sub 0.8/Ge/sub 0.2/ relaxed buffer or 'virtual subst...... hiện toàn bộ
#Germanium silicon alloys #Silicon germanium #Quantum cascade lasers #Substrates #Surface emitting lasers #Vertical cavity surface emitting lasers #Frequency #Phonons #Light scattering #Particle scattering
Light-induced difference Terahertz spectroscopy and its biomedical applications
Proceedings, IEEE Tenth International Conference on Terahertz Electronics -
Y.C. Shen, P. Upadhya, A.G. Davies, E.H. Linfield
Laser-induced difference THz spectroscopy has been used to investigate three samples with different lifetimes. The spectroscopy system is based on a 10 nJ titanium sapphire laser with a pulse duration of 12 fs and a centre wavelength of 790 nm. For semi-insulting (SI) GaAs and high-resistivity (HR) silicon samples, absorption in the THz range is mainly a result of mobile electrons. A lifetime of a...... hiện toàn bộ
#Spectroscopy #Optical pulses #Laser excitation #Absorption #Laser applications #Titanium #Gallium arsenide #Silicon #Electron mobility #Biomedical optical imaging
Design and performance of a novel vacuum-capable terahertz time-domain spectrometer
Proceedings, IEEE Tenth International Conference on Terahertz Electronics -
Y.C. Shen, P. Upadhya, E.H. Linfield, A.G. Davies
We have designed and built a vacuum-capable terahertz (THz) time-domain spectrometer which allows THz spectroscopy measurements to be made whilst avoiding interference from, for example, water vapour absorption. Using a biased semi-insulating GaAs emitter and a 1-mm-thick [110] oriented ZnTe crystal as an electro-optic detection sensor, we achieved a dynamic range of over 10/sup 10/ in THz power a...... hiện toàn bộ
#Time domain analysis #Spectroscopy #Absorption #Zinc compounds #Submillimeter wave measurements #Interference #Gallium arsenide #Electrooptic devices #Dynamic range #Frequency
Optically pumped terahertz silicon lasers
Proceedings, IEEE Tenth International Conference on Terahertz Electronics -
S.G. Pavlov, H.-W. Hubers, R.Kh. Zhukavin, E.E. Orlova, H. Riemann, V.N. Shastin
Photoexcitation of shallow impurity centers in silicon at low temperatures (<10 K) yields stimulated emission from intra-center optical transitions in the terahertz range. The population inversion mechanisms are based on the peculiarities of electron-phonon interaction, leading to the existence of either a relatively long-living excited impurity state or a group of unpopulated impurity states.
#Optical pumping #Laser excitation #Silicon #Pump lasers #Semiconductor lasers #Stimulated emission #Semiconductor impurities #Laser transitions #Quantum cascade lasers #Optical sensors
Femtosecond experiments using single-cycle pulses at 30 THz: the buildup of screening in a photoexcited electron-hole plasma
Proceedings, IEEE Tenth International Conference on Terahertz Electronics -
A. Leitenstorfer, R. Huber, F. Tauser, A. Brodschelm
We report on a new class of ultrabroadband THz experiments with a time resolution as high as 30 fs. The measurements rely on single-cycle probe transients which are generated via optical rectification of 10 fs near-infrared pulses in a thin GaSe nonlinear crystal. The electric field of these pulses is directly monitored via ultrabroadband electro-optic detection. On a femtosecond time scale, we ob...... hiện toàn bộ
#Plasma displays #Ultrafast optics #Optical scattering #Optical pulses #Plasma measurements #Pulse measurements #Probes #Optical pulse generation #Monitoring #Particle scattering
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