Novel concept for THz-photomixer based on periodically doped heterostructures and quasi ballistic transport

Proceedings, IEEE Tenth International Conference on Terahertz Electronics
M. Eckardt1,2, A. Schwanhausser3, F. Renner2, L. Robledo2, A. Friedrich2, P. Pohl2, P. Kiesel2, S. Malzer2, G.H. Dohler2, D. Driscoll4, M. Hanson4, A.C. Gossard2,4
1Friedrich-Alexander-Universitat Erlangen-Nurnberg, Erlangen, Bayern, DE
2Institute for Technical Physics, University Erlangen-Nürnberg, Erlangen, Germany
3Inst. fur Tech. Phys., Erlangen-Nurnberg Univ., Erlangen, Germany
4Materials Department, University of California, Santa Barbara, USA

Tóm tắt

Reports on a new concept for THz photomixers, which are not (as usually) frequency limited by the carrier lifetime in low-temperature-grown GaAs. The concept is based on ballistic electron transport in a periodically doped heterostructure (p-i-n-p-i-n-superlattice) and allows for impedance matching to the attached antenna.

Từ khóa

#Gallium arsenide #Charge carrier processes #Spontaneous emission #Ballistic transport #Frequency #Charge carrier lifetime #Electron mobility #Space charge #Power lasers #Impedance matching

Tài liệu tham khảo

schwanhuer, 2001, Proceedings of HCIS-12 10.1103/PhysRevB.61.16642 10.1063/1.119346 eckardt, 2001, Proceedings of HCIS-12 brown, 1995, Appl Phys Lett, 66, 4003 10.1063/1.115292
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Proceedings, IEEE Tenth International Conference on Terahertz Electronics

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