Terahertz intersubband emission from silicon-germanium quantum cascades

Proceedings, IEEE Tenth International Conference on Terahertz Electronics
R.W. Kelsall1, Z. Ikonic1, P. Harrison1, S.A. Lynch2, R. Bates2, D.J. Paul2, D.J. Norris3, San Lin Liew3, A.G. Cullis3, D.J. Robbins4, P. Murzyn5, C.R. Pidgeon5, D. D Arnone6
1Institute of Microwaves and Photonics, University of Leeds, UK
2Cavendish Laboratory, Cambridge University, UK
3Department of Electronic and Electrical Engineering, Sheffield University, UK
4QinetiQ, Malvern, UK
5Department of Physics, Heriot Watt University, UK
6TeraView Limited, Cambridge, UK

Tóm tắt

Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si/sub 0.76/Ge/sub 0.24//Si heterostructures grown on a Si/sub 0.8/Ge/sub 0.2/ relaxed buffer or 'virtual substrate'.

Từ khóa

#Germanium silicon alloys #Silicon germanium #Quantum cascade lasers #Substrates #Surface emitting lasers #Vertical cavity surface emitting lasers #Frequency #Phonons #Light scattering #Particle scattering

Tài liệu tham khảo

10.1016/S0921-5107(01)00782-6 10.1063/1.1498861 lynch, 2002, Appl Phys Lett 10.1103/PhysRevB.23.2082 10.1063/1.1461054 paul, 2002, E-MRS 2002 Spring Meeting
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Proceedings, IEEE Tenth International Conference on Terahertz Electronics

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