Optically pumped terahertz silicon lasers

S.G. Pavlov1,2, H.-W. Hubers1, R.Kh. Zhukavin3, E.E. Orlova3, H. Riemann, V.N. Shastin4
1German Aerospace Center, Institute of Space Sensor Technology and Planetary Exploration, Berlin, Germany
2Russian Academy of Sciences, Institute for Physics of Microstructure, Nizhny Novgorod, Russia
3IPM RAS, Russia
4Russian Academy of Sciences, Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia

Tóm tắt

Photoexcitation of shallow impurity centers in silicon at low temperatures (<10 K) yields stimulated emission from intra-center optical transitions in the terahertz range. The population inversion mechanisms are based on the peculiarities of electron-phonon interaction, leading to the existence of either a relatively long-living excited impurity state or a group of unpopulated impurity states.

Từ khóa

#Optical pumping #Laser excitation #Silicon #Pump lasers #Semiconductor lasers #Stimulated emission #Semiconductor impurities #Laser transitions #Quantum cascade lasers #Optical sensors

Tài liệu tham khảo

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