Optically pumped terahertz silicon lasers
Tóm tắt
Photoexcitation of shallow impurity centers in silicon at low temperatures (<10 K) yields stimulated emission from intra-center optical transitions in the terahertz range. The population inversion mechanisms are based on the peculiarities of electron-phonon interaction, leading to the existence of either a relatively long-living excited impurity state or a group of unpopulated impurity states.
Từ khóa
#Optical pumping #Laser excitation #Silicon #Pump lasers #Semiconductor lasers #Stimulated emission #Semiconductor impurities #Laser transitions #Quantum cascade lasers #Optical sensorsTài liệu tham khảo
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