Cảm biến quang nhạy tọa độ hai chiều dựa trên liên kết heterojunction (p)InSb–(n)CdTe Dịch bởi AI Pleiades Publishing Ltd - Tập 51 - Trang 202-209 - 2016
A. V. Margaryan, S. G. Petrosyan, L. A. Matevosyan, K. E. Avjyan
Tính nhạy sáng của liên kết heterojunction (n)CdTe–(p)InSb được chiếu xạ cục bộ
do quá trình lắng đọng laser xung CdTe màng mỏng đã được nghiên cứu. Các cảm
biến quang nhạy IR hai tọa độ dựa trên liên kết heterojunction này đã được chế
tạo, và đã chỉ ra rằng chúng có các đặc tính đầu ra tuyến tính. Giá trị nhạy độ
tọa độ đo được khoảng 30 nA/μm.
#Cảm biến quang #liên kết heterojunction #CdTe #InSb #tia hồng ngoại #nhạy sáng.
Thermal placement of elements of integrated circuits on crystal surfacePleiades Publishing Ltd - Tập 52 - Trang 276-280 - 2017
A. G. Harutyunyan
The criterion and the corresponding approach for the thermal placement of
integrated circuits (IC) elements on the crystal surface are proposed. The
criterion of placement is identical to the traditional criteria of minimizing
the total length of connections between elements, which at the placement stage
enables to apply an additive multiparametric criterion of joint consideration of
electrical an... hiện toàn bộ
On the production of Λ- and Ω-hyperons in nucleus-nucleus collisionsPleiades Publishing Ltd - Tập 50 - Trang 297-301 - 2015
V. M. Zhamkochtan
The processes of production of Λ0- and Ω--hyperons in collisions of two nucleus
are considered in the nucleon fragmentation region of an incident nucleus. The
inclusive spectra of these processes are calculated for different target nuclei.
The presented results may be used for analyzing the fragmentation mechanisms as
well as the accuracy of the model approximations used.
Methods of Production the Isotope 67CuPleiades Publishing Ltd - Tập 55 - Trang 183-190 - 2020
G. H. Hovhannisyan, A. V. Stepanyan, E. R. Saryan, L. A. Amirakyan
The nuclear reactions on zinc isotopes leading to the formation of the medical
theranostic isotope 67Cu have been investigated. Model calculations were made
using the TALYS1.9 code. The results are compared with the published
experimental data. The comparison of calculated and experimental data showed a
satisfactory agreement in the case of the proton-nuclear reactions. In the case
of the calculat... hiện toàn bộ
Artem Isaak Alikhanian (1908–1978) (Biographic Sketch)Pleiades Publishing Ltd - Tập 44 - Trang 209-216 - 2009
H. M. Asatryan, T. G. Hambardzumyan
A.I. Alikhanian is one of founders of experimental nuclear physics in USSR.
Starting and development of the atomic nuclei, cosmic ray, and elementary
particle physics in Armenia relates to the name Alikhanian. He created the
Aragats and Nor-Amberd high-altitude cosmic stations and the Yerevan Physics
Institute. He made an essential contribution into the development of high-energy
physics and playe... hiện toàn bộ
Anti-Reflection Properties of Black Silicon Coated with Thin Films of Metal Oxides by Atomic Layer DepositionPleiades Publishing Ltd - Tập 56 - Trang 240-246 - 2021
G. Y. Ayvazyan, M. V. Katkov, M. S. Lebedev, V. R. Shayapov, M. Yu. Afonin, D. E. Petukhova, I. V. Yushina, E. A. Maksimovskii, A. V. Aghabekyan
The results of experimental studies of the anti-reflection properties of black
silicon (b-Si) layers coated with thin films of TiO2, HfO2, and Sc2O3 metal
oxides by atomic layer deposition (ALD) are presented. An improvement in the
antireflection properties of b-Si in a wide spectral range is shown. It is
expedient to use the investigated ALD films in solar cells as an effective
passivating coatin... hiện toàn bộ
Dependence of the Conductivity Mechanism and Dielectric Properties of Zinc Oxide Films on the Degree of Lithium DopingPleiades Publishing Ltd - Tập 58 - Trang 274-281 - 2023
N. R. Aghamalyan, H. L. Ayvazyan, T. A. Vartanyan, Y. A. Kafadaryan, H. G. Mnatsakanyan, R. K. Hovsepyan, A. R. Poghosyan
The effect of lithium impurity on the dielectric characteristics and the
mechanism of conductivity of zinc oxide thin films obtained by the electron beam
deposition method was studied. At low frequencies, a strong dispersion of
permittivity constants associated with interfacial polarization at grain
boundaries was found. It was shown that the frequency dependencies of the
conductivity are well des... hiện toàn bộ
Noise in porous silicon structures in air and in conditions of gas adsorptionPleiades Publishing Ltd - Tập 43 - Trang 131-135 - 2008
Z. H. Mkhitaryan, A. A. Shatveryan, V. M. Aroutiounian, F. V. Gasparyan
Low-frequency noise, in the range 1–500 Hz, is measured at room temperature in
samples of Au/PS/SCS/Al structure with a layer of porous silicon. Numerical
values of the Hooge parameter αH are estimated and the dependence of αH on the
composition of the gaseous environment, where the sample is placed, is
determined. Possible reasons of observed high values of αH for the samples in
air and of the in... hiện toàn bộ