Noise in porous silicon structures in air and in conditions of gas adsorption
Tóm tắt
Low-frequency noise, in the range 1–500 Hz, is measured at room temperature in samples of Au/PS/SCS/Al structure with a layer of porous silicon. Numerical values of the Hooge parameter αH are estimated and the dependence of αH on the composition of the gaseous environment, where the sample is placed, is determined. Possible reasons of observed high values of αH for the samples in air and of the increase in αH in conditions of gas adsorption are discussed. Introducing of carbon oxide in air changes the shape of spectrum.
Tài liệu tham khảo
Scholten, A.J., Tiemeijer, L.F., et al., Electron Devices, 2003, vol. l.5, p. 618.
Melkonyan, S.V., Gasparyan, F.V., and Asriyan, H.V., SPIE 4 th Int. Symp. Fluctuation and Noise, Florence, Italy, 2007, p. 66001K.
Melkonyan, S.V., Aroutiounian, V.M., Gasparyan, F.V., and Asriyan, H.V., Physica B, 2006, vol. 382, p. 65.
McWorther, L., in Semiconductor Surface Physics, Philadelphia: Univ. of Pennsylvania Press, 1957, p. 207.
Hooge, N., Kleinpenning, T.G.M., and Vandamme, L.K.J., Rep. Progr. Phys., 1981, vol. 44, p. 497.
Melkonyan, S.V., Aroutiounian, V.M., Gasparyan, F.V., and Korman, C.E., Physica B, 2005, vol. 357, p. 398.
Hung, K.K., Ko, P.K., Hu, C., and Cheng, Y.C., IEEE Trans. Electron Devices, 1990, vol. 37, p. 654.
Hung, K.K., Ko, P.K., Hu, C., and Cheng, Y.C., IEEE Trans. Electron Devices, 1990, vol. 37, p. 1323.
Ghibaudo, G., Roux, O., et al., Phys. Stat. Sol. (a), 1991, vol. 124, p. 57.
Asriyan, H.V. and Gasparyan, F.V., Mod. Phys. Lett. B, 2004, vol. 18, p. 427.
Bilenko, D.I., Belobrovaya, O.Ya., et al., FTP, 2002, vol. 36, p. 490.
Slobodchikov, S.V., Goryachev, D.N., Salikhov, Kh.M., and Sreseli, O.M., FTP, 1997, vol. 33, p. 340.
Tutov, E.A., Pavlenko, M.N., Protasova, I.V., and Kashkarov, V.M., Pis’ma v ZhTF, 2002, vol. 28, p. 45.
Szentpáli, B., Gottwald, P., Mohacsy, T., Molnar, K., and Barsony, I., Proc. SPIE, 2003, vol. 5113, p. 398.
Bloom, I. and Balberg, I., Appl. Phys. Letters, 1999, vol. 74, p. 1427.
Mkhitaryan, Z.H., Shatveryan, A.A., Aroutiounian, V.M., Ghulinyan, M., and Pavesi, L., Extended Abstracts of the 5 th Int. Conf., Sitges-Barcelona, 2006, p. 254.
Mkhitaryan, Z.H., Shatveryan, A.A., Aroutiounian, V.M., Ghulinyan, M., Pavesi, L., Kish, L.B., and Granquist, C.C., E-MRS IUMRS ICEM 2006 Spring Meeting. Symposium C. Silicon Nanocrystals for Electronic and Sensing Applications. Nice, France, 2006, p. 27.
Mkhitaryan, Z.H., Shatveryan, A.A., Aroutiounian, V.M., Ghulinyan, M., and Pavesi, L., Phys. Stat. Sol. (c), 2007, vol. 4, p. 2063.
Mkhitaryan, Z.H., Shatveryan, A.A., Egiazaryan, G.A., Asriyan, H.V., Proc. fifth international conference Semiconductor Micro-and Nanoelectronics, Agveran, Armenia, 2005, p. 32.
Shatveryan, A.A., J. Contemp. Phys. (Armenian Ac. Sci.), 2006, vol. 41, no. 2, p. 43.
Turner, D., J. Electochem. Soc., 1958, vol. 5, p. 402.
Mkhitaryan, Z.O., Shatveryan, A.A., and Aroutiounian, V.M., J. Contemp. Phys. (Armenian Ac. Sci.), 2007, vol. 42, p. 158.
Averkiev, N.S., Kazakova, L.P., Lebedev, E.A., and Smirnova, N.N., FTP, 2001, vol. 35, p. 607.
Mercha, A., Vandamme, L.K.J., Pichon, L., et al., J. Appl. Phys., 2001, vol. 90, p. 4019.
Melkonyan, S.V., Gasparyan, F.V., Aroutiounian, V.M., and Asriyan, H.V., Proc. 18 th Int. Conf. on Noise and Fluctuations (ICNF 2005), September 19–23, Salamanca, Spain, 2005, p. 87.