Microdose X-ray imaging systems of the budker institute of nuclear physics and the fields of their optimal useOptoelectronics, Instrumentation and Data Processing - Tập 51 - Trang 64-71 - 2015
E. A. Babichev, S. E. Baru, V. V. Leonov, V. V. Porosev, G. A. Savinov
Problems related to X-ray imaging with minimum radiation doses are described, a method for constructing systems for X-ray imaging of people at these doses is proposed, the main components of these systems are briefly described, and their optimal applications in medicine and security systems are characterized.
New nonparametric statistical test for problems with three samples, which is more effective than the Whitney testOptoelectronics, Instrumentation and Data Processing - Tập 51 - Trang 110-119 - 2015
G. I. Salov
A new nonparametric statistical test for testing the hypothesis of homogeneity of three samples against an alternative hypothesis, which implies that random variables of one of these samples tend to be stochastically greater than random variables of each of the other two samples separately, is proposed. The known Whitney test is equivalent to a particular case of the new test. Application of these...... hiện toàn bộ
Localized Probing of Phase Transitions in Nanoscale Polymers by Using the Thermoplasmonic MetasurfaceOptoelectronics, Instrumentation and Data Processing - Tập 59 - Trang 109-115 - 2023
E. A. Chernykh, S. S. Kharintsev
Under the action of light under the conditions of plasmon resonance, metal nanoparticles induce nanoscale heating. This effect forms the basis for thermoplasmon probing of phase changes occurring in the nanoscale systems whose investigation is the key problem in the modern materials science. Despite an evident simplicity of such an approach, intensive absorption of light by resonance nanostructure...... hiện toàn bộ
Study of diffraction interferometer properties using the Zakhar’evskii theoryOptoelectronics, Instrumentation and Data Processing - Tập 47 - Trang 573-583 - 2012
G. A. Lenkova
Results of an analytical study of the properties of a diffraction interferometer with the general path of noninverted wavefronts are presented. The interferometer is based on the Fresnel zone plate and designed to control the shapes of surfaces and second-order mirrors. It is shown that application of the theory of pupils and windows allows an essential simplification of consideration of optical s...... hiện toàn bộ
Simulation of optimal two-phase operations in random operating environmentsOptoelectronics, Instrumentation and Data Processing - Tập 51 - Trang 241-246 - 2015
Ya. A. Mostovoi
Statistical simulation of distributed sets of objects integrated into a large network and forming an operating environment is considered. The simulation is carried out on square matrices with random filling using percolation theory. Statistical features of the clusters of objects that arise in this case are analyzed. Along with well-known stochastic percolation, the concept of a controlled percola...... hiện toàn bộ
Expanding the Allowable Limits of Axisymmetric Three-Dimensional Surfaces Curvature for Microstructure RecordingOptoelectronics, Instrumentation and Data Processing - Tập 58 - Trang 123-127 - 2022
V. P. Kiryanov
We analyze the operation of the system for automatic focusing of technological laser radiation on 3D optical surfaces, implemented in the optical recording head of the LGI-2 laser image generator. The reasons for considerable restrictions on the allowable inclination of the recording surface are discussed. We propose an alternative solution that makes it possible to significantly increase the allo...... hiện toàn bộ
Influence of a Low-Temperature GaAs Dislocation Filter on the Perfection of GaAs/Si LayersOptoelectronics, Instrumentation and Data Processing - Tập 54 - Trang 181-186 - 2018
D. S. Abramkin, M. O. Petrushkov, E. A. Emel’yanov, M. A. Putyato, B. R. Semyagin, A. V. Vasev, M. Yu. Esin, I. D. Loshkarev, A. K. Gutakovskii, V. V. Preobrazhenskii, T. S. Shamirzaev
The influence of dislocation filters based on low-temperature layers (LT) of GaAs and postgrowth annealing on the perfection of GaAs/Si heterostructures is discussed. It is shown that LT-GaAs layers reduce the density of threading dislocations and surface roughness. Post-growth annealing at a temperature of 650 °C reduces the concentration of nonradiative recombination centers in GaAs/Si layers to...... hiện toàn bộ
Harmonic passive mode-locking with active loss and refractive index modulationOptoelectronics, Instrumentation and Data Processing - Tập 43 - Trang 274-277 - 2007
A. K. Komarov
Passive mode-locking with equidistant ultrashort pulses in the laser cavity due to additional weak modulation of the losses or the refractive index is analyzed. The velocity of the relative pulse motion and the time of establishing the harmonic passive mode-locking mode are analytically estimated.