Journal of Applied Physics
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Key scattering mechanisms limiting the lateral transport in a modulation-doped polar heterojunction
Journal of Applied Physics - Tập 119 Số 21 - 2016
Space Charge Waves in Cylindrical Plasma ColumnsWhen a plasma is of finite transverse cross section, space-charge waves may propagate even in the absence of a drift motion or thermal velocities of the plasma. Some of the properties of these space charge waves have been investigated by regarding the plasma as a dielectric and solving the resulting field equations. The effect of a steady axial magnetic field is considered, but motion of h... ... hiện toàn bộ
Journal of Applied Physics - Tập 30 Số 11 - Trang 1784-1793 - 1959
Drive current enhancement in tunnel field-effect transistors by graded heterojunction approach
Journal of Applied Physics - Tập 114 Số 9 - 2013
Analysis of thermohydraulic explosion energeticsThermohydraulic explosion, caused by direct contact of hot liquids with cold water, represent a major danger of volcanism and in technical processes. Based on experimental observations and nonequilibrium thermodynamics we propose a model of heat transfer from the hot liquid to the water during the thermohydraulic fragmentation process. The model was validated using the experimentally obser... ... hiện toàn bộ
Journal of Applied Physics - Tập 98 Số 4 - 2005
Study of stacked-emitter layer for high efficiency amorphous/crystalline silicon heterojunction solar cells
Journal of Applied Physics - Tập 116 Số 24 - Trang - 2014
Nanocrystalline FeNdB permanent magnets with enhanced remanenceIsotropic nanocrystalline exchange coupled FeNdB magnets with enhanced remanence were produced using the melt spinning procedure. Starting from nearly single phase Fe14Nd2B magnets, the content of additional α-Fe in composite magnets was stepwise increased up to 40 vol % by reducing the Nd and B content. The maximum remanence of JR=1.25 T was found in composite magnets containing 30 vol % ... ... hiện toàn bộ
Journal of Applied Physics - Tập 80 Số 3 - Trang 1667-1673 - 1996
The effect of a trailing shield for perpendicular write heads
Journal of Applied Physics - Tập 99 Số 8 - 2006
Effect of high conductivity amorphous InGaZnO active layer on the field effect mobility improvement of thin film transistors
Journal of Applied Physics - Tập 116 Số 21 - 2014
Observation of Dynamic Domain Size Variation in a Silicon-Iron AlloyIt was recently noted that the dynamic domain structure in a ferromagnetic material may differ markedly from that observed under static conditions. In this investigation the dynamic size of magnetic domains in a rectangular single-crystal specimen of an iron-3% silicon alloy (2.5 cm×3.3 cm×0.22 mm with a (001) [100] orientation) was measured using the Kerr magneto-optic effect together wit... ... hiện toàn bộ
Journal of Applied Physics - Tập 41 Số 3 - Trang 1034-1035 - 1970
Tổng số: 2,081
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