Journal of Applied Physics

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Potential barrier model incorporating localized states explaining tunnel anomalies
Journal of Applied Physics - Tập 58 Số 3 - Trang 1320-1325 - 1985
J. Halbritter
Most tunnel barriers contain localized electronic states nl(Δx, ε) in large amounts decreasing with distance Δx from the metal. The localized states hybridize with conduction electrons forming interface states with a decay width Δl∝exp(−2Δxκ) and a correlation energy ΔU* ∝ 1/εrΔx. For ΔU*>Δl these states are localized, which yields a strong coupling to surface plasmons, phonons, and...... hiện toàn bộ
On the proximity effect between normal metals and cuprate superconductors
Journal of Applied Physics - Tập 69 Số 7 - Trang 4137-4139 - 1991
G. Deutscher, R. W. Simon
We consider the proximity effect between high-temperature superconducting cuprates and ordinary metals in the context of superconductor-normal-superconductor (S-N-S) microbridges. The theory of the proximity effect for conventional superconductors predicts that superconductivity can only be weakly induced by the coupling of the cuprates with metals such as gold or silver. Experimental inve...... hiện toàn bộ
Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces
Journal of Applied Physics - Tập 107 Số 5 - 2010
Junpei Kasai, Taro Hitosugi, Miki Moriyama, Koichi Goshonoo, Ngoc Lam Huong Hoang, Satoshi Nakao, Naoomi Yamada, Tetsuya Hasegawa
Anatase Nb-doped TiO2 transparent conducting oxide has been formed on GaN(0001) surfaces using a sputtering method. Amorphous films deposited at room temperature were annealed at a substrate temperature of 500 °C in vacuum to form single-phase anatase films. Films with a thickness of 170 nm exhibited a resistivity of 8×10−4 Ω cm with absorptance less than 5% at a wavelength of 460 nm. Furt...... hiện toàn bộ
Elastic scattering calculations for electrons and positrons in solid targets
Journal of Applied Physics - Tập 79 Số 11 - Trang 8406-8411 - 1996
Maurizio Dapor
The differential, total, and transport cross sections for electrons and positrons impinging on free atoms and solid targets have been calculated in the energy range of 100–5000 eV. As an application, the mean number of the wide angle collisions suffered by the particle before slowing down to rest and the backscattering coefficient are analytically calculated; The values of backscattering c...... hiện toàn bộ
Calculations of Mott scattering cross section
Journal of Applied Physics - Tập 68 Số 7 - Trang 3066-3072 - 1990
Zbigniew Czyżewski, Danny O’Neill MacCallum, A. D. Romig, David C. Joy
Calculations of Mott elastic scattering cross section of electrons for most elements of the periodic table up to element number 94 in the energy range 20 eV–20 keV have been performed. The Dirac equation transformed to a first-order differential equation was solved numerically. The influence of the choice of atomic potential on the scattering factor was studied in comparison to a simple mu...... hiện toàn bộ
Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO
Journal of Applied Physics - Tập 95 Số 12 - Trang 7856-7861 - 2004
Toshie Koyama, Shigefusa F. Chichibu
Importance of lattice matching and proper surface arrangement of the substrate was shown to obtain better epilayer qualities of ZnO grown by an epitaxy method, the helicon-wave-excited-plasma sputtering epitaxy. The a-axis-locked single-domain (0001) ZnO epitaxy was accomplished on the uniaxially nearly lattice-matched (112̄0) Al2O3 substrate. The epilayer had approximately 50-100-nm-diam ...... hiện toàn bộ
Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures
Journal of Applied Physics - Tập 84 Số 5 - Trang 2597-2601 - 1998
J. Narayan, K. Dovidenko, A.V. Narlikar, S. Oktyabrsky
We have investigated the nature of epitaxy, defects (dislocations, stacking faults, and inversion domains), and heterointerfaces in zinc oxide films grown on (0001) sapphire and explored the possibility of using it as a buffer layer for growing group III nitrides. High quality epitaxial ZnO films were grown on sapphire using pulsed laser deposition in the temperature range 750–800 °C. The ...... hiện toàn bộ
Comparison of nanostructure characteristics of ZnO grown on GaN and sapphire
Journal of Applied Physics - Tập 99 Số 5 - 2006
Wen-Yu Shiao, Chun-Yung Chi, Shu-Cheng Chin, Chi‐Feng Huang, Tsung-Yi Tang, Yen-Cheng Lu, Yu-Li Lin, Hong Ming Lin, Fang-Yi Jen, C. C. Yang, Baoping Zhang, Yasutomo Segawa
The immature developments of p-type ZnO and ZnO-related ternary or quaternary compound and the small lattice mismatch between ZnO and GaN stimulate interest in the hybrid growth of ZnO and GaN. In this research, we compared the nanostructures and optical properties of two ZnO thin-film samples grown under the same conditions but on different underlying materials (sapphire and GaN). With th...... hiện toàn bộ
Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire
Journal of Applied Physics - Tập 90 Số 10 - Trang 5115-5119 - 2001
F. Vigué, P. Vennéguès, C. Deparis, S. Vézian, M. Laügt, J. P. Faurie
Transmission electron microscopy and high resolution x-ray diffraction are used to characterize defects in ZnO layers grown by plasma-assisted molecular-beam epitaxy on (0001) sapphire. Two- and three-dimensional types of growth modes are described and the observed mosaic structure is analyzed in each case. It is found that two-dimensional layers exhibit a roughness as low as 6 nm. Their s...... hiện toàn bộ
Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties
Journal of Applied Physics - Tập 106 Số 6 - 2009
S. Chandramohan, A. Kanjilal, S.N. Sarangi, Subrata Majumder, R. Sathyamoorthy, T. Som
This paper reports on structural, optical, vibrational, and morphological properties of cobalt-doped CdS thin films, prepared by 90 keV Co+ implantation at room temperature. In this work, we have used cobalt concentration in the range of 0.34–10.8 at. %. Cobalt doping does not lead to the formation of any secondary phase, either in the form of metallic clusters or impurity complexes. Howev...... hiện toàn bộ
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