Journal of Applied Physics
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Potential barrier model incorporating localized states explaining tunnel anomalies
Journal of Applied Physics - Tập 58 Số 3 - Trang 1320-1325 - 1985
Most tunnel barriers contain localized electronic states nl(Δx, ε) in large
amounts decreasing with distance Δx from the metal. The localized states
hybridize with conduction electrons forming interface states with a decay width
Δl∝exp(−2Δxκ) and a correlation energy ΔU* ∝ 1/εrΔx. For ΔU*>Δl these states
are localized, which yields a strong coupling to surface plasmons, phonons, and
spins. Thes...
On the proximity effect between normal metals and cuprate superconductors
Journal of Applied Physics - Tập 69 Số 7 - Trang 4137-4139 - 1991
We consider the proximity effect between high-temperature superconducting
cuprates and ordinary metals in the context of
superconductor-normal-superconductor (S-N-S) microbridges. The theory of the
proximity effect for conventional superconductors predicts that
superconductivity can only be weakly induced by the coupling of the cuprates
with metals such as gold or silver. Experimental investigatio...
Properties of TiO2-based transparent conducting oxide thin films on GaN(0001) surfaces
Journal of Applied Physics - Tập 107 Số 5 - 2010
Anatase Nb-doped TiO2 transparent conducting oxide has been formed on GaN(0001)
surfaces using a sputtering method. Amorphous films deposited at room
temperature were annealed at a substrate temperature of 500 °C in vacuum to form
single-phase anatase films. Films with a thickness of 170 nm exhibited a
resistivity of 8×10−4 Ω cm with absorptance less than 5% at a wavelength of 460
nm. Furthermore,...
Elastic scattering calculations for electrons and positrons in solid targets
Journal of Applied Physics - Tập 79 Số 11 - Trang 8406-8411 - 1996
The differential, total, and transport cross sections for electrons and
positrons impinging on free atoms and solid targets have been calculated in the
energy range of 100–5000 eV. As an application, the mean number of the wide
angle collisions suffered by the particle before slowing down to rest and the
backscattering coefficient are analytically calculated; The values of
backscattering coefficie...
Calculations of Mott scattering cross section
Journal of Applied Physics - Tập 68 Số 7 - Trang 3066-3072 - 1990
Calculations of Mott elastic scattering cross section of electrons for most
elements of the periodic table up to element number 94 in the energy range 20
eV–20 keV have been performed. The Dirac equation transformed to a first-order
differential equation was solved numerically. The influence of the choice of
atomic potential on the scattering factor was studied in comparison to a simple
muffin-tin...
Importance of lattice matching and surface arrangement for the helicon-wave-excited-plasma sputtering epitaxy of ZnO
Journal of Applied Physics - Tập 95 Số 12 - Trang 7856-7861 - 2004
Importance of lattice matching and proper surface arrangement of the substrate
was shown to obtain better epilayer qualities of ZnO grown by an epitaxy method,
the helicon-wave-excited-plasma sputtering epitaxy. The a-axis-locked
single-domain (0001) ZnO epitaxy was accomplished on the uniaxially nearly
lattice-matched (112̄0) Al2O3 substrate. The epilayer had approximately
50-100-nm-diam atomical...
Defects and interfaces in epitaxial ZnO/α-Al2O3 and AlN/ZnO/α-Al2O3 heterostructures
Journal of Applied Physics - Tập 84 Số 5 - Trang 2597-2601 - 1998
We have investigated the nature of epitaxy, defects (dislocations, stacking
faults, and inversion domains), and heterointerfaces in zinc oxide films grown
on (0001) sapphire and explored the possibility of using it as a buffer layer
for growing group III nitrides. High quality epitaxial ZnO films were grown on
sapphire using pulsed laser deposition in the temperature range 750–800 °C. The
epitaxia...
Growth modes and microstructures of ZnO layers deposited by plasma-assisted molecular-beam epitaxy on (0001) sapphire
Journal of Applied Physics - Tập 90 Số 10 - Trang 5115-5119 - 2001
Transmission electron microscopy and high resolution x-ray diffraction are used
to characterize defects in ZnO layers grown by plasma-assisted molecular-beam
epitaxy on (0001) sapphire. Two- and three-dimensional types of growth modes are
described and the observed mosaic structure is analyzed in each case. It is
found that two-dimensional layers exhibit a roughness as low as 6 nm. Their
subdomain...
Comparison of nanostructure characteristics of ZnO grown on GaN and sapphire
Journal of Applied Physics - Tập 99 Số 5 - 2006
The immature developments of p-type ZnO and ZnO-related ternary or quaternary
compound and the small lattice mismatch between ZnO and GaN stimulate interest
in the hybrid growth of ZnO and GaN. In this research, we compared the
nanostructures and optical properties of two ZnO thin-film samples grown under
the same conditions but on different underlying materials (sapphire and GaN).
With the high g...
Implantation-assisted Co-doped CdS thin films: Structural, optical, and vibrational properties
Journal of Applied Physics - Tập 106 Số 6 - 2009
This paper reports on structural, optical, vibrational, and morphological
properties of cobalt-doped CdS thin films, prepared by 90 keV Co+ implantation
at room temperature. In this work, we have used cobalt concentration in the
range of 0.34–10.8 at. %. Cobalt doping does not lead to the formation of any
secondary phase, either in the form of metallic clusters or impurity complexes.
However, with...
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