Crystallography Reports

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Simulation of mass transfer in a kinetic experiment based on migration of flat layers of a solution in a melt in a temperature gradient field
Crystallography Reports - Tập 54 Số 2 - Trang 348-354 - 2009
V. Yu. Gershanov, S. I. Garmashov, Lyudmila I. Matyushina
Copper-Induced Oligomerization of Ceruloplasmin
Crystallography Reports - Tập 66 - Trang 828-832 - 2021
M. V. Petoukhov, A. V. Sokolov, V. A. Kostevich, V. R. Samygina
Oligomerization of copper-containing ferroxidase of ceruloplasmin in the presence of protein-unbound copper in a solution has been investigated by small-angle X-ray scattering (SAXS). Ceruloplasmin is a monomer with a molecular weight of ~132 kDa. Copper chloride added in a concentration of 10 μM leads to dimerization of 60% of protein. According to the analysis of intersubunit contacts, dimerizat...... hiện toàn bộ
Thermophysical processes during sapphire crystal growth by the horizontal Bridgman method
Crystallography Reports - Tập 53 - Trang 331-335 - 2011
G. A. Lebedev, S. P. Malyukov, V. A. Stefanovich, D. I. Cherednichenko
A model problem has been formulated which served as a basis for analysis and estimation of the parameters determining the character of heat and mass transfer processes in all stages during production of sapphire crystals by the horizontal Bridgman method.
Circular dichroism spectra of synthetic amethyst crystals
Crystallography Reports - Tập 50 - Trang 461-464 - 2005
V. I. Burkov, A. V. Egorysheva, Yu. F. Kargin, A. A. Mar’in, E. V. Fedotov
The axial circular-dichroism spectrum of a synthetic amethyst crystal has been studied for the first time. Bands both of the positive and negative signs are revealed. New information on the color centers of amethyst and their electronic structure is obtained.
On the results of the 2009 Struchkov Prize, a competition for Young Researchers, and the announcement of the current (14th) competition for 2010
Crystallography Reports - Tập 55 Số 3 - Trang 534-534 - 2010
Е. В. Баранов, K Voronina
Morphological stability of the solid‒liquid interface during melt crystallization of Pb1–x Cd x F2 solid solution
Crystallography Reports - Tập 61 - Trang 512-516 - 2016
P. P. Fedorov, I. I. Buchinskaya, E. V. Chernova
The stability function of the solid‒liquid interface for PbF2–CdF2 solid solution with respect to constitutional supercooling is calculated using the phase diagram of the system. The calculated curve is typical of the systems with continuous solid solutions, having minima points in the liquidus and solidus curves. This dependence can be used to estimate the technological parameters of the process ...... hiện toàn bộ
The energy of radial and hyperbolic defects in a long cylindrical capillary
Crystallography Reports - Tập 45 - Trang 310-311 - 2000
V. K. Pershin, T. V. Kouchnareva
Effect of high-energy electron irradiation in an electron microscope column on fluorides of alkaline earth elements (CaF2, SrF2, and BaF2)
Crystallography Reports - Tập 57 - Trang 299-307 - 2012
V. I. Nikolaichik, B. P. Sobolev, M. A. Zaporozhets, A. S. Avilov
The effect of high-energy (150 eV) electron irradiation in an electron microscope column on crystals of fluorides of alkaline earth elements CaF2, SrF2, and BaF2 is studied. During structural investigations by electron diffraction and electron microscopy, the electron irradiation causes chemical changes in MF2 crystals such as the desorption of fluorine and the accumulation of oxygen in the irradi...... hiện toàn bộ
Khachik Saakovich Bagdasarov (On the occasion of his 80th birthday)
Crystallography Reports - Tập 54 Số 3 - Trang 532-533 - 2009
Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow
Crystallography Reports - Tập 66 - Trang 520-524 - 2021
I. O. Mayboroda, E. M. Kolobkova, Yu. V. Grishchenko, I. A. Chernykh, M. L. Zanaveskin, N. K. Chumakov
The formation of β-Si3N4 for subsequent growth of AlGaN and GaN heterostructures of silicon wafers has been studied. It is established that the native oxide layer protects the silicon surface from the formation of amorphous silicon nitride when heating in an ammonia flow. Controlled formation of β-Si3N4 at partial ammonia pressures up to 3 × 10–5 Torr is demonstrated. This circumstance makes it po...... hiện toàn bộ
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