Copper-Induced Oligomerization of CeruloplasminCrystallography Reports - Tập 66 - Trang 828-832 - 2021
M. V. Petoukhov, A. V. Sokolov, V. A. Kostevich, V. R. Samygina
Oligomerization of copper-containing ferroxidase of ceruloplasmin in the
presence of protein-unbound copper in a solution has been investigated by
small-angle X-ray scattering (SAXS). Ceruloplasmin is a monomer with a molecular
weight of ~132 kDa. Copper chloride added in a concentration of 10 μM leads to
dimerization of 60% of protein. According to the analysis of intersubunit
contacts, dimerizat... hiện toàn bộ
Thermophysical processes during sapphire crystal growth by the horizontal Bridgman methodCrystallography Reports - Tập 53 - Trang 331-335 - 2011
G. A. Lebedev, S. P. Malyukov, V. A. Stefanovich, D. I. Cherednichenko
A model problem has been formulated which served as a basis for analysis and
estimation of the parameters determining the character of heat and mass transfer
processes in all stages during production of sapphire crystals by the horizontal
Bridgman method.
Circular dichroism spectra of synthetic amethyst crystalsCrystallography Reports - Tập 50 - Trang 461-464 - 2005
V. I. Burkov, A. V. Egorysheva, Yu. F. Kargin, A. A. Mar’in, E. V. Fedotov
The axial circular-dichroism spectrum of a synthetic amethyst crystal has been
studied for the first time. Bands both of the positive and negative signs are
revealed. New information on the color centers of amethyst and their electronic
structure is obtained.
Morphological stability of the solid‒liquid interface during melt crystallization of Pb1–x Cd x F2 solid solutionCrystallography Reports - Tập 61 - Trang 512-516 - 2016
P. P. Fedorov, I. I. Buchinskaya, E. V. Chernova
The stability function of the solid‒liquid interface for PbF2–CdF2 solid
solution with respect to constitutional supercooling is calculated using the
phase diagram of the system. The calculated curve is typical of the systems with
continuous solid solutions, having minima points in the liquidus and solidus
curves. This dependence can be used to estimate the technological parameters of
the process ... hiện toàn bộ
Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia FlowCrystallography Reports - Tập 66 - Trang 520-524 - 2021
I. O. Mayboroda, E. M. Kolobkova, Yu. V. Grishchenko, I. A. Chernykh, M. L. Zanaveskin, N. K. Chumakov
The formation of β-Si3N4 for subsequent growth of AlGaN and GaN heterostructures
of silicon wafers has been studied. It is established that the native oxide
layer protects the silicon surface from the formation of amorphous silicon
nitride when heating in an ammonia flow. Controlled formation of β-Si3N4 at
partial ammonia pressures up to 3 × 10–5 Torr is demonstrated. This circumstance
makes it po... hiện toàn bộ