Fabrication and characterization of electrostatically driven silicon microbeams

Microelectronics Journal - Tập 29 - Trang 641-644 - 1998
P. Attia1, M. Boutry1, A. Bosseboeuf1, P. Hesto1
1Institut d'Electronique Fondamentale-CNRS URA 022-Université Paris XI Orsay-Bât. 220, 91405 Orsay Cedex, France

Tài liệu tham khảo

Yao, 1995, A surface micromachined miniature switch for telecommunications applications with signal frequencies from DC up to 4 GHz, 384

Roy, 1995, Fabrication of electrostatic nickel microrelays by nickel surface micromachining, 353

K.A. Shaw, Z.L. Zhang, N.C. MacDonald, SCREAM I: a single-crystal silicon process for microelectromechanical structures, Proc. IEEE, MEMS 93, p. 155.

Jansen, 1995, A survey on the reactive ion etching of silicon in microtechnology, Micromechanics Europe, 18

Murakawa, 1994, Mechanism of surface charging effects on etching profile defects, Jpn. J. Appl. Phys., 33, 2184, 10.1143/JJAP.33.2184

M. Boutry, A. Bosseboeuf, T. Bourouina, J.P. Grandchamp, E. Dufour, J.P. Gilles, Accuracy of thin film stress measurement with c-Si microbeams fabricated by dry etching, J. Vac. Sci. Technol. B (submitted).

Mamor, 1995, WSi Schottky diodes: effect of sputtering deposition conditions on the barrier height, Appl. Surf. Sci., 91, 342, 10.1016/0169-4332(95)00142-5

Tang, 1992, Electrostatic comb drive levitation and control method, J. Microelectromechanical Systems, 1, 170, 10.1109/JMEMS.1992.752508

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Microelectronics Journal

Tập 29

641-644

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