Schottky diodes: effect of sputtering deposition conditions on the barrier height

Applied Surface Science - Tập 91 Số 1-4 - Trang 342-346 - 1995
M. Mamor1, Elisabeth Dufour‐Gergam1, L. Finkman1, Gaëtan F. Tremblay1, F. Meyer1, K. Bouziane2
1Institut d’Electronique Fondamentale, CNRS URA 22, Bât. 220, Université Paris Sud, 91405, Orsay Cedex, France
2CNRS Bellevue, 92195 Meudon, France.

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