A 139 nW, 67 $$\hbox {ppm}/^\circ \hbox {C}$$ BJT-CMOS-Based Voltage Reference Circuit

Circuits, Systems, and Signal Processing - Tập 36 - Trang 5062-5078 - 2017
Shailesh Singh Chouhan1, Kari Halonen1
1Department of Micro- and Nanosciences, School of Electrical Engineering, Aalto University, Espoo, Finland

Tóm tắt

In this work, a low-power voltage reference circuit has been developed using the principle that a thermal compensation of the threshold voltage of a diode-connected nMOSFET can be obtained by using the PTAT current. The proposed circuit is designed using $$0.18\,\upmu \hbox {m}$$ standard CMOS technology for the industrial temperature range of $$-40$$ to $$+85\,^\circ \hbox {C}$$ . The measurements have been done over a set of 10 samples in the given temperature range. The measured results show that the proposed circuit is capable of working in the supply voltage range of 1.2–1.8 V with the mean line sensitivity and total current consumption of 0.64%/V and $$115.4\,\hbox {nA}$$ , respectively, at $$22.5\,^\circ \hbox {C}$$ . The measured mean reference voltage obtained from the circuit is 435 mV with the mean temperature coefficient of $$67\,\hbox {ppm}{/}^\circ \hbox {C}$$ . The measured noise density at $$22.5\,^\circ \hbox {C}$$ without any filtering capacitor is $$42\,\upmu \hbox {V}{/}\sqrt{\text {Hz}}$$ at 100 Hz. The active area of the circuit is $$0.01008\,\hbox {mm}^2$$ .

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Thông tin xuất bản

Circuits, Systems, and Signal Processing

Tập 36

5062-5078

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