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Absolute characterization of photoluminesence from pulsed‐laser deposited, sol‐gel, sputtered and evaporated ZnO thin films
Wiley - Tập 6 Số S1 - 2009
Michael T. Taschuk, Joshua M. LaForge, Hoang T. Nguyen, Yan Sun, P. Kursa, R. G. DeCorby, Michael J. Brett, Ying Y. Tsui
AbstractZnO thin films were fabricated using PLD, sputtering, e‐beam evaporation and sol‐gel techniques. The films were annealed in an oxygen environment to improve their crystallinity. Photoluminescence efficiency and angular emission patterns were characterized and are reported in absolute radiometric units. Conversion efficiencies in the range of 1 – 7 · 10... hiện toàn bộ
Epitaxial growth of nonpolar ZnO by MOVPE
Wiley - Tập 3 Số 4 - Trang 726-729 - 2006
Takumi Moriyama, Shizυo Fujita
AbstractEpitaxial growth characteristics of nonpolar (M‐ and A‐plane) ZnO on M‐ and R‐plane sapphire substrates were investigated. The growth of ZnO along the c‐axis direction, which aligns parallel to [2‐1‐10] and [01‐11] directions of M‐ and R‐plane sapphire, is achieved under lower growth temperature and/or VI/II ratio, and this growth direction is preferable fo...... hiện toàn bộ
The effect of silver doping on the critical current density of Bi‐Pb‐Sr‐Ca‐Cu‐O ceramic superconductor
Wiley - Tập 3 Số 9 - Trang 2994-2998 - 2006
Morteza Zargar Shoushtari, Amir Bahrami, Mansoor Farbod
AbstractIn this research, the effect of silver doping on Bi1.6Pb0.4Sr2Ca2Cu3Oy ceramic superconductor has been investigated. The solid‐state reaction method and two different silver doping methods has been used, namely, doping during making ...... hiện toàn bộ
Conduction and electroluminescence from organic continuous and nanofiber thin films
Wiley - Tập 7 Số 11-12 - Trang 2763-2766 - 2010
Jakob Kjelstrup‐Hansen, Xuhai Liu, Henrik H. Henrichsen, Kasper Thilsing‐Hansen, Horst‐Günter Rubahn
AbstractIn this work, the electrical and electroluminescence properties of para‐hexaphenylene (p6P) thin films and nanofibers have been investigated in a field‐effect transistor device configuration with interdigitated source‐drain bottom contact electrodes. P‐type behavior of thin films is observed with a mobility of 1×10‐6 cm2... hiện toàn bộ
Thermal dehydrogenation of amorphous silicon deposited on c‐Si: Effect of the substrate temperature during deposition
Wiley - Tập 9 Số 10-11 - Trang 2198-2202 - 2012
A. de Calheiros Velozo, G. Lavareda, C. Nunes de Carvalho, A. Amaral
AbstractSamples of doped and undoped a‐Si:H were deposited at temperatures ranging from 100 ºC to 350 ºC and then submitted to different dehydrogenation temperatures (from 350 ºC to 550 ºC) and times (from 1 h to 4 h). a‐Si:H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity...... hiện toàn bộ
The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride
Wiley - Tập 9 Số 10-11 - Trang 2189-2193 - 2012
R. Bousbih, Wissem Dimassi, Ikbel Haddadi, H. Ezzaouïa
AbstractSilicon nitride (SiNx) thin films were grown on silicon by plasma‐enhanced chemical vapor deposition (PECVD) method at low temperature by varying the silane (SiH4) to nitrogen (N2) ratio in the plasma. As‐deposited samples were investigated by varying annealing temperature from 400 °C to 950 °C ...... hiện toàn bộ
Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 K
Wiley - Tập 8 Số 3 - Trang 792-795 - 2011
Takaaki Iwai, Michio Tajima, Atsushi Ogura
AbstractWe report details about the quantitative analysis of B and P impurities in the concentration range between 1 × 1014 and 1 × 1017 cm–3 by photoluminescence (PL) in solar‐grade Si (SOG‐Si). The intensity ratio of impurity‐bound exciton (BE) to free exciton (FE) at 4.2 K was used as a measure of th...... hiện toàn bộ
Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications
Wiley - Tập 8 Số 3 - Trang 678-681 - 2011
Maxime Forster, Erwann Fourmond, R. Einhaus, H. Lauvray, J. Kraiem, M. Lemiti
AbstractIn this paper, we investigate gallium co‐doping during CZ crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p‐type ingot with high resistivity despite high B and P contents in the silicon. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier m...... hiện toàn bộ
Electrical and optical properties of undoped and In‐doped ZnO thin films
Wiley - Tập 4 Số 3 - Trang 1337-1340 - 2007
Müjdat Çağlar, Yasemin Çağlar, Saliha Ilıcan
AbstractTransparent conducting undoped and indium‐doped zinc oxide (ZnO) thin films have been deposited by the spray pyrolysis method at 350 °C substrate temperature. X‐ray diffraction spectra of the films have shown that the films are polycrystalline and hexagonal wurtzite in structure. The average optical transmittance of 1% indium‐doped ZnO thin films was over 8...... hiện toàn bộ
Exciton thermal escape in symmetric InAs quantum dots in InGaAs/GaAs well structures
Wiley - Tập 4 Số 2 - Trang 379-381 - 2007
J.L. Casas Espínola, T.V. Torchynska, G. Polupan, R. Peña Sierra
AbstractThe photoluminescence and its temperature dependence have been investigated for the ensembles of InAs quantum dots embedded in symmetric In0.15Ga0.85As/GaAs quantum wells with different PL intensities. The solution of the set of rate equations for exciton dynamics was used to analyze the nature of thermal activation...... hiện toàn bộ
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