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Epitaxial growth of nonpolar ZnO by MOVPE
Wiley - Tập 3 Số 4 - Trang 726-729 - 2006
Takumi Moriyama, Shizυo Fujita
AbstractEpitaxial growth characteristics of nonpolar (M‐ and A‐plane) ZnO on M‐ and R‐plane sapphire substrates were investigated. The growth of ZnO along the c‐axis direction, which aligns parallel to [2‐1‐10] and [01‐11] directions of M‐ and R‐plane sapphire, is achieved under lower growth temperature and/or VI/II ratio, and this growth direction is preferable fo...... hiện toàn bộ
The effect of silver doping on the critical current density of Bi‐Pb‐Sr‐Ca‐Cu‐O ceramic superconductor
Wiley - Tập 3 Số 9 - Trang 2994-2998 - 2006
Morteza Zargar Shoushtari, Amir Bahrami, Mansoor Farbod
AbstractIn this research, the effect of silver doping on Bi1.6Pb0.4Sr2Ca2Cu3Oy ceramic superconductor has been investigated. The solid‐state reaction method and two different silver doping methods has been used, namely, doping during making ...... hiện toàn bộ
Conduction and electroluminescence from organic continuous and nanofiber thin films
Wiley - Tập 7 Số 11-12 - Trang 2763-2766 - 2010
Jakob Kjelstrup‐Hansen, Xuhai Liu, Henrik H. Henrichsen, Kasper Thilsing‐Hansen, Horst‐Günter Rubahn
AbstractIn this work, the electrical and electroluminescence properties of para‐hexaphenylene (p6P) thin films and nanofibers have been investigated in a field‐effect transistor device configuration with interdigitated source‐drain bottom contact electrodes. P‐type behavior of thin films is observed with a mobility of 1×10‐6 cm2... hiện toàn bộ
Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications
Wiley - Tập 8 Số 3 - Trang 678-681 - 2011
Maxime Forster, Erwann Fourmond, R. Einhaus, H. Lauvray, J. Kraiem, M. Lemiti
AbstractIn this paper, we investigate gallium co‐doping during CZ crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p‐type ingot with high resistivity despite high B and P contents in the silicon. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier m...... hiện toàn bộ
Irradiation of carbon nanotubes with carbon projectiles: A molecular dynamics study
Wiley - Tập 10 Số 4 - Trang 693-696 - 2013
Cristian D. Denton, Santiago Heredia‐Avalos, Juan Carlos Moreno‐Marín
AbstractThe irradiation of carbon based nanostructures with ions and electrons has been shown to be an appropriate tool to tailor their properties. The defects induced in the nanostructures during irradiation are able to modify their mechanical and electronic properties. Here we simulate the irradiation of carbon nanotubes with carbon ions using a molecular dynamic...... hiện toàn bộ
Surface properties of AlxGa1‐xN/GaN heterostructures treated by fluorine plasma: an XPS study
Wiley - Tập 8 Số 7-8 - Trang 2200-2203 - 2011
Sen Huang, Hongwei Chen, Kevin J. Chen
AbstractThe variations in surface potential and the Schottky barrier height ΦB in fluorine‐plasma‐treated AlxGa1‐xN/GaN heterotructures are systematically studied by x‐ray photoelectron spectroscopy (XPS), giving insights into the mechanisms underlying the strong threshold voltage shift in Alx...... hiện toàn bộ
Magnetic properties of M x TiSe 2 (M = Mn, Fe, Co)
Wiley - Tập 3 Số 8 - Trang 2787-2790 - 2006
Y. Tazuke, T. Miyashita, Huzio Nakano, Ryo Sasaki
Absolute characterization of photoluminesence from pulsed‐laser deposited, sol‐gel, sputtered and evaporated ZnO thin films
Wiley - Tập 6 Số S1 - 2009
Michael T. Taschuk, Joshua M. LaForge, Hoang T. Nguyen, Yan Sun, P. Kursa, R. G. DeCorby, Michael J. Brett, Ying Y. Tsui
AbstractZnO thin films were fabricated using PLD, sputtering, e‐beam evaporation and sol‐gel techniques. The films were annealed in an oxygen environment to improve their crystallinity. Photoluminescence efficiency and angular emission patterns were characterized and are reported in absolute radiometric units. Conversion efficiencies in the range of 1 – 7 · 10... hiện toàn bộ
Thermal dehydrogenation of amorphous silicon deposited on c‐Si: Effect of the substrate temperature during deposition
Wiley - Tập 9 Số 10-11 - Trang 2198-2202 - 2012
A. de Calheiros Velozo, G. Lavareda, C. Nunes de Carvalho, A. Amaral
AbstractSamples of doped and undoped a‐Si:H were deposited at temperatures ranging from 100 ºC to 350 ºC and then submitted to different dehydrogenation temperatures (from 350 ºC to 550 ºC) and times (from 1 h to 4 h). a‐Si:H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity...... hiện toàn bộ
The effect of thermal annealing on the properties of PECVD hydrogenated silicon nitride
Wiley - Tập 9 Số 10-11 - Trang 2189-2193 - 2012
R. Bousbih, Wissem Dimassi, Ikbel Haddadi, H. Ezzaouïa
AbstractSilicon nitride (SiNx) thin films were grown on silicon by plasma‐enhanced chemical vapor deposition (PECVD) method at low temperature by varying the silane (SiH4) to nitrogen (N2) ratio in the plasma. As‐deposited samples were investigated by varying annealing temperature from 400 °C to 950 °C ...... hiện toàn bộ
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