Wiley
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Absolute characterization of photoluminesence from pulsed‐laser deposited, sol‐gel, sputtered and evaporated ZnO thin filmsAbstract ZnO thin films were fabricated using PLD, sputtering, e‐beam evaporation and sol‐gel techniques. The films were annealed in an oxygen environment to improve their crystallinity. Photoluminescence efficiency and angular emission patterns were characterized and are reported in absolute radiometric units. Conversion efficiencies in the range of 1 – 7 · 10... hiện toàn bộ
Wiley - Tập 6 Số S1 - 2009
Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 KAbstract We report details about the quantitative analysis of B and P impurities in the concentration range between 1 × 1014 and 1 × 1017 cm–3 by photoluminescence (PL) in solar‐grade Si (SOG‐Si). The intensity ratio of impurity‐bound exciton (BE) to free exciton (FE) at 4.2 K was used as a measure of th... ... hiện toàn bộ
Wiley - Tập 8 Số 3 - Trang 792-795 - 2011
Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applicationsAbstract In this paper, we investigate gallium co‐doping during CZ crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p‐type ingot with high resistivity despite high B and P contents in the silicon. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier m... ... hiện toàn bộ
Wiley - Tập 8 Số 3 - Trang 678-681 - 2011
Two modes of HVPE growth of GaN and related macrodefectsAbstract GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the growth stress was high and caused cracking. Films grown in LT mode had rough surface with high density of V‐defects (pit... ... hiện toàn bộ
Wiley - Tập 10 Số 3 - Trang 468-471 - 2013
Electronic structure of BaFeO3 studied by X‐ray spectroscopyAbstract We investigated the electronic structure of BaFeO3 by using HAXPES and XAS measurements and first principle studies. The experimental and theoretical results indicated that BaFeO3 is a negative charge transfer compound. We concluded that the on‐site Coulomb energy and the strong hybridization between Fe‐3... hiện toàn bộ
Wiley - Tập 12 Số 6 - Trang 818-821 - 2015
Comparison of tribological behaviour and biocompatibility of Ti6Al4V alloy after ion implantation or thermal oxidationAbstract This paper describes improvements of the tribological properties and the biocompatibility of Ti6 Al4V alloy implanted by oxygen plasma immersion (PIII) in comparison with other treatments like thermal oxidation, conventional beamline ion implantation (II) of nitrogen and a combination of both thermal oxidation and II of nitrogen.... hiện toàn bộ
Wiley - Tập 5 Số 4 - Trang 947-951 - 2008
Irradiation of carbon nanotubes with carbon projectiles: A molecular dynamics studyAbstract The irradiation of carbon based nanostructures with ions and electrons has been shown to be an appropriate tool to tailor their properties. The defects induced in the nanostructures during irradiation are able to modify their mechanical and electronic properties. Here we simulate the irradiation of carbon nanotubes with carbon ions using a molecular dynamic... ... hiện toàn bộ
Wiley - Tập 10 Số 4 - Trang 693-696 - 2013
Exciton thermal escape in symmetric InAs quantum dots in InGaAs/GaAs well structuresAbstract The photoluminescence and its temperature dependence have been investigated for the ensembles of InAs quantum dots embedded in symmetric In0.15 Ga0.85 As/GaAs quantum wells with different PL intensities. The solution of the set of rate equations for exciton dynamics was used to analyze the nature of thermal activation... ... hiện toàn bộ
Wiley - Tập 4 Số 2 - Trang 379-381 - 2007
Electrical and optical properties of undoped and In‐doped ZnO thin filmsAbstract Transparent conducting undoped and indium‐doped zinc oxide (ZnO) thin films have been deposited by the spray pyrolysis method at 350 °C substrate temperature. X‐ray diffraction spectra of the films have shown that the films are polycrystalline and hexagonal wurtzite in structure. The average optical transmittance of 1% indium‐doped ZnO thin films was over 8... ... hiện toàn bộ
Wiley - Tập 4 Số 3 - Trang 1337-1340 - 2007
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