Maxime Forster1,2, Erwann Fourmond3, R. Einhaus1, H. Lauvray1, J. Kraiem1, M. Lemiti3
1Apollon Solar - Apollon Solar (Lyon - France)
2INL - Institut des Nanotechnologies de Lyon (France)
3INL - PV - INL - Photovoltaïque (France)
Tóm tắt
AbstractIn this paper, we investigate gallium co‐doping during CZ crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p‐type ingot with high resistivity despite high B and P contents in the silicon. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier mobility measurements indicate that this material is suitable for the realization of solar cells with comparable efficiencies to standard material. Significant light‐induced degradation of minority carrier lifetime is however revealed to occur in this material. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
