Wiley
1862-6351
1610-1642
Cơ quản chủ quản: N/A
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Các bài báo tiêu biểu
Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applicationsAbstract In this paper, we investigate gallium co‐doping during CZ crystallization of boron and phosphorus compensated Si. It is shown that the addition of gallium yields a fully p‐type ingot with high resistivity despite high B and P contents in the silicon. Segregation of doping impurities is consistent with theory. Minority carrier lifetime and majority carrier m... ...
Tập 8 Số 3 - Trang 678-681 - 2011
Electrical and optical properties of undoped and In‐doped ZnO thin filmsAbstract Transparent conducting undoped and indium‐doped zinc oxide (ZnO) thin films have been deposited by the spray pyrolysis method at 350 °C substrate temperature. X‐ray diffraction spectra of the films have shown that the films are polycrystalline and hexagonal wurtzite in structure. The average optical transmittance of 1% indium‐doped ZnO thin films was over 8... ...
Tập 4 Số 3 - Trang 1337-1340 - 2007
Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 KAbstract We report details about the quantitative analysis of B and P impurities in the concentration range between 1 × 1014 and 1 × 1017 cm–3 by photoluminescence (PL) in solar‐grade Si (SOG‐Si). The intensity ratio of impurity‐bound exciton (BE) to free exciton (FE) at 4.2 K was used as a measure of th... ...
Tập 8 Số 3 - Trang 792-795 - 2011
The effect of silver doping on the critical current density of Bi‐Pb‐Sr‐Ca‐Cu‐O ceramic superconductorAbstract In this research, the effect of silver doping on Bi1.6 Pb0.4 Sr2 Ca2 Cu3 Oy ceramic superconductor has been investigated. The solid‐state reaction method and two different silver doping methods has been used, namely, doping during making ... ...
Tập 3 Số 9 - Trang 2994-2998 - 2006
Epitaxial growth of nonpolar ZnO by MOVPEAbstract Epitaxial growth characteristics of nonpolar (M‐ and A‐plane) ZnO on M‐ and R‐plane sapphire substrates were investigated. The growth of ZnO along the c‐axis direction, which aligns parallel to [2‐1‐10] and [01‐11] directions of M‐ and R‐plane sapphire, is achieved under lower growth temperature and/or VI/II ratio, and this growth direction is preferable fo... ...
Tập 3 Số 4 - Trang 726-729 - 2006
Two modes of HVPE growth of GaN and related macrodefectsAbstract GaN films with thickness up to 3 mm were grown by halide vapour phase epitaxy method. Two growth modes were observed: the high temperature (HT) mode and the low temperature (LT) mode. Films grown in HT mode had smooth surface, however the growth stress was high and caused cracking. Films grown in LT mode had rough surface with high density of V‐defects (pit... ...
Tập 10 Số 3 - Trang 468-471 - 2013
Surface properties of AlxGa1‐xN/GaN heterostructures treated by fluorine plasma: an XPS studyAbstract The variations in surface potential and the Schottky barrier height ΦB in fluorine‐plasma‐treated Alx Ga1‐x N/GaN heterotructures are systematically studied by x‐ray photoelectron spectroscopy (XPS), giving insights into the mechanisms underlying the strong threshold voltage shift in Alx... ...
Tập 8 Số 7-8 - Trang 2200-2203 - 2011
Thermal dehydrogenation of amorphous silicon deposited on c‐Si: Effect of the substrate temperature during depositionAbstract Samples of doped and undoped a‐Si:H were deposited at temperatures ranging from 100 ºC to 350 ºC and then submitted to different dehydrogenation temperatures (from 350 ºC to 550 ºC) and times (from 1 h to 4 h). a‐Si:H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity... ...
Tập 9 Số 10-11 - Trang 2198-2202 - 2012
Electronic structure of BaFeO3 studied by X‐ray spectroscopyAbstract We investigated the electronic structure of BaFeO3 by using HAXPES and XAS measurements and first principle studies. The experimental and theoretical results indicated that BaFeO3 is a negative charge transfer compound. We concluded that the on‐site Coulomb energy and the strong hybridization between Fe‐3...
Tập 12 Số 6 - Trang 818-821 - 2015