Wiley
SCOPUS (2004,2006-2017)
1862-6351
1610-1642
Cơ quản chủ quản: N/A
Các bài báo tiêu biểu
Ga co‐doping in Cz‐grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications
Tập 8 Số 3 - Trang 678-681 - 2011
AbstractIn this paper, we investigate gallium co‐doping during CZ
crystallization of boron and phosphorus compensated Si. It is shown that the
addition of gallium yields a fully p‐type ingot with high resistivity despite
high B and P contents in the silicon. Segregation of doping impurities is
consistent with theory. Minority carrier lifetime and majority carrier mobility
measurements indicate tha...
Electrical and optical properties of undoped and In‐doped ZnO thin films
Tập 4 Số 3 - Trang 1337-1340 - 2007
AbstractTransparent conducting undoped and indium‐doped zinc oxide (ZnO) thin
films have been deposited by the spray pyrolysis method at 350 °C substrate
temperature. X‐ray diffraction spectra of the films have shown that the films
are polycrystalline and hexagonal wurtzite in structure. The average optical
transmittance of 1% indium‐doped ZnO thin films was over 84% in the visible
range. The dire...
Quantitative analysis of impurities in solar‐grade Si by photoluminescence spectroscopy around 20 K
Tập 8 Số 3 - Trang 792-795 - 2011
AbstractWe report details about the quantitative analysis of B and P impurities
in the concentration range between 1 × 1014 and 1 × 1017 cm–3 by
photoluminescence (PL) in solar‐grade Si (SOG‐Si). The intensity ratio of
impurity‐bound exciton (BE) to free exciton (FE) at 4.2 K was used as a measure
of the impurity concentration in the range between 5 × 1010 and 1 × 1015 cm–3 in
the standard PL meth...
The effect of silver doping on the critical current density of Bi‐Pb‐Sr‐Ca‐Cu‐O ceramic superconductor
Tập 3 Số 9 - Trang 2994-2998 - 2006
AbstractIn this research, the effect of silver doping on Bi1.6Pb0.4Sr2Ca2Cu3Oy
ceramic superconductor has been investigated. The solid‐state reaction method
and two different silver doping methods has been used, namely, doping during
making processes of samples (batch 1) and doping after making
Bi1.6Pb0.4Sr2Ca2Cu3Oy superconductor (batch 2). We observed that by adding
silver to BPSCCO compound, pa...
Two modes of HVPE growth of GaN and related macrodefects
Tập 10 Số 3 - Trang 468-471 - 2013
AbstractGaN films with thickness up to 3 mm were grown by halide vapour phase
epitaxy method. Two growth modes were observed: the high temperature (HT) mode
and the low temperature (LT) mode. Films grown in HT mode had smooth surface,
however the growth stress was high and caused cracking. Films grown in LT mode
had rough surface with high density of V‐defects (pits), however, such films
were crac...
Epitaxial growth of nonpolar ZnO by MOVPE
Tập 3 Số 4 - Trang 726-729 - 2006
AbstractEpitaxial growth characteristics of nonpolar (M‐ and A‐plane) ZnO on M‐
and R‐plane sapphire substrates were investigated. The growth of ZnO along the
c‐axis direction, which aligns parallel to [2‐1‐10] and [01‐11] directions of M‐
and R‐plane sapphire, is achieved under lower growth temperature and/or VI/II
ratio, and this growth direction is preferable for smooth lateral growth.
Increasi...
Surface properties of AlxGa1‐xN/GaN heterostructures treated by fluorine plasma: an XPS study
Tập 8 Số 7-8 - Trang 2200-2203 - 2011
AbstractThe variations in surface potential and the Schottky barrier height ΦB
in fluorine‐plasma‐treated AlxGa1‐xN/GaN heterotructures are systematically
studied by x‐ray photoelectron spectroscopy (XPS), giving insights into the
mechanisms underlying the strong threshold voltage shift in AlxGa1‐xN/GaN HEMTs
by the F plasma treatment technology. It is found that the treatment resulted in
a fluori...
Thermal dehydrogenation of amorphous silicon deposited on c‐Si: Effect of the substrate temperature during deposition
Tập 9 Số 10-11 - Trang 2198-2202 - 2012
AbstractSamples of doped and undoped a‐Si:H were deposited at temperatures
ranging from 100 ºC to 350 ºC and then submitted to different dehydrogenation
temperatures (from 350 ºC to 550 ºC) and times (from 1 h to 4 h). a‐Si:H films
were characterised after deposition through the measurements of specific
material parameters such as: the optical gap, the conductivity at 25 ºC, the
thermal activation...
Electronic structure of BaFeO3 studied by X‐ray spectroscopy
Tập 12 Số 6 - Trang 818-821 - 2015
AbstractWe investigated the electronic structure of BaFeO3 by using HAXPES and
XAS measurements and first principle studies. The experimental and theoretical
results indicated that BaFeO3 is a negative charge transfer compound. We
concluded that the on‐site Coulomb energy and the strong hybridization between
Fe‐3d and O‐2p orbitals play a very important role of emergence of negative
charge transfe...