Absolute characterization of photoluminesence from pulsed‐laser deposited, sol‐gel, sputtered and evaporated ZnO thin films

Wiley - Tập 6 Số S1 - 2009
Michael T. Taschuk1, Joshua M. LaForge1, Hoang T. Nguyen2, Yan Sun1, P. Kursa1,2, R. G. DeCorby1,2, Michael J. Brett1,3, Ying Y. Tsui1
1Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, Canada T6G 2V4
2TRLabs, 7th Floor ECERF, 9107 116 Street, Edmonton, Alberta, Canada T6G 2V4
3National Institute for Nanotechnology, National Research Council, 11421 Saskatchewan Dr., Edmonton, Alberta, Canada T6J 2M9

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Abstract

ZnO thin films were fabricated using PLD, sputtering, e‐beam evaporation and sol‐gel techniques. The films were annealed in an oxygen environment to improve their crystallinity. Photoluminescence efficiency and angular emission patterns were characterized and are reported in absolute radiometric units. Conversion efficiencies in the range of 1 – 7 · 10‐6 were found for the PLD films, 7 · 10‐6 for a sputtered film, 7 – 40 · 10‐6 for the e‐beam evaporated films, and 20 – 400 · 10‐6 for the Sol‐Gel films. In most cases, the angular emission pattern of the photoluminescence was lambertian in nature. Non‐lambertian emission patterns were observed for some films with microstructure, achieved with PLD and e‐beam evaporation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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