Transactions on Electrical and Electronic Materials

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Role of Micro and Nanofillers in Electrical Tree Initiation and Propagation in Cross-Linked Polyethylene Composites
Transactions on Electrical and Electronic Materials - Tập 19 Số 4 - Trang 254-260 - 2018
Ashish Paramane, Sathish Kumar Kannaiah
Dielectric Strength and Patterns of Partial Discharges in Nanocomposites Insulation of Three-Core Belted Power Cables
Transactions on Electrical and Electronic Materials - - 2022
Ahmed Thabet, Mohamed T. Fouad
The Effect of Rare Earth Metal Doping in Bi2/3Cu3Ti4O12 Ceramic on Microstructure, Dielectric and Electrical Properties
Transactions on Electrical and Electronic Materials - Tập 24 - Trang 194-204 - 2023
Dinesh Prajapati, Vishnu Shankar Rai, Vinod Kumar, Manish Kumar Verma, Atendra Kumar, N. B. Singh, K. D. Mandal
An Aurivillius oxide, Bi(2/3)-xGdxCu3Ti4O12 (x = 0.05, 0.10, and 0.20) ceramic designated as BGCTO-0.05, BGCTO-0.1 and BGCTO-0.2 has been fabricated by modified solid-state route resemble with semi wet route and characterized by using various techniques including XRD, SEM, EDX, TEM and XPS for getting information about phase formation, morphology, particle size distribution and oxidation state of ...... hiện toàn bộ
Construction of Cr2O3:ZnO Nanostructured Thin Film Prepared by Pulsed Laser Deposition Technique for NO2 Gas Sensor
Transactions on Electrical and Electronic Materials - - 2020
Mahdi Hasan Suhail, Ismael K. Adehmash, Saadoon M. Abdul Kareem, Dana A. Tahir, Omed Gh. Abdullah
Liquid Phase Exfoliation and Characterization of Few Layer MoS2 and WS2 Nanosheets as Channel Material in Field Effect Transistor
Transactions on Electrical and Electronic Materials - Tập 24 - Trang 140-148 - 2023
Rohit Sharma, Ashish Kumar, Anit Dawar, Sunil Ojha, Ambuj Mishra, Anshu Goyal, Radhapiyari Laishram, V. G. Sathe, Ritu Srivastava, Om Prakash Sinha
Field effect transistors (FETs) are considered as the backbone of electronic industry. In this study, we adopted a simple drop cast method for the fabrication of MoS2 and WS2 channel based FET on commercially available pre-patterned OFET devices. The synthesis of few-layers thick MoS2 and WS2 nanosheets (NSs) has been done by solvent-assisted exfoliation method. FESEM and TEM study reveals that NS...... hiện toàn bộ
Versatile Hole Carrier Selective MoOx Contact for High Efficiency Silicon Heterojunction Solar Cells: A Review
Transactions on Electrical and Electronic Materials - Tập 20 Số 1 - Trang 1-6 - 2019
Shahzada Qamar Hussain, Kumar Mallem, Muhammad Ali Khan, Muhammad Quddamah Khokhar, Youngseok Lee, Jinjoo Park, Kyung Su Lee, Young-Kuk Kim, Eun‐Chel Cho, Young Hyun Cho, Junsin Yi
Design of Octagonal CPW-Fed Broadband Millimeter Wave Antenna for 5G Applications
Transactions on Electrical and Electronic Materials - - 2023
S. Ashok Kumar, T. Shanmuganantham, D. Sindhaniselvi, A. L. Sharon Giftsy
A CPW -fed antenna is designed with octagonal shaped patch operating at a broadband millimeter-wave frequency from 24.8 to 48.8 GHz for wireless 5G applications. The antenna was design with dimensions of 20 × 20 × 1.6 mm3 are made with low cost FR4 loss free substrate with dielectric constant (εr) of 4.3 using the CST Microwave Studio software. Simulated radiation pattern and return loss <  − 10 d...... hiện toàn bộ
Temperature Dependent Poly Crystalline Zinc Oxide Thin Film Transistor Characteristics
Transactions on Electrical and Electronic Materials - - 2021
Naceur Soufyane, Nouredine Sengouga, Mohammed Labed, Afak Meftah
A Large Signal GaN HEMT Transistor Based on the Angelov Model Parameters Extraction Applied to Single Stage Low Noise Amplifier
Transactions on Electrical and Electronic Materials - Tập 23 - Trang 595-608 - 2022
Abdelkrim Belmecheri, Mustapha Djebari
This article consists of two research parts. The first one presents results of calculation and optimization of Angelov model parameters compared to the experimental values of the intrinsic elements and the Ids–Vds model of a Gaussian signal transistor HEMT. The device has two fingers gate of 0.25 mm of each one. The gate width is also equal to 0.5 mm and the gate length is of 0.5 μm. The calculati...... hiện toàn bộ
Electrical Conductivity and Mechanical Properties of Dendritic Copper Particulate Polymer Films
Transactions on Electrical and Electronic Materials - Tập 20 - Trang 99-106 - 2018
B. Shivamurthy, B. H. S. Thimmappa, Rohan Purushothama, G. K. V. D. Datta Sai
Hybrid filler loaded multi-layer polymer composites are becoming one of the suitable alternative material for electromagnetic interference shielding (EMIS) applications. Mainly these composites are manufactured by conductive/magnetic fabrics, foams, foils or films or a combination of all, layered in an orderly architecture to obtain effective EMIS. In this work, dendrite structured copper particul...... hiện toàn bộ
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