Solid-State Electronics

Công bố khoa học tiêu biểu

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A high efficiency C-band internally-matched harmonic tuning GaN power amplifier
Solid-State Electronics - Tập 123 - Trang 96-100 - 2016
Y. Lu, B.C. Zhao, J.X. Zheng, H.S. Zhang, X.F. Zheng, X.H. Ma, Y. Hao, P.J. Ma
The dependence of drain-induced barrier lowering on substrate biasing in short channel PMOS devices at 77 K
Solid-State Electronics - Tập 33 - Trang 1265-1273 - 1990
Z.X. Yan, M.J. Deen
Chemical substitution in VB-VIB thermoelectric materials
Solid-State Electronics - Tập 5 - Trang 55-57 - 1962
R.A. Horne
A silicon quantum wire transistor with one-dimensional subband effects
Solid-State Electronics - Tập 44 - Trang 2207-2212 - 2000
Minkyu Je, Sangyeon Han, Ilgweon Kim, Hyungcheol Shin
Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs
Solid-State Electronics - Tập 132 - Trang 64-72 - 2017
Nadim Ahmed, Aloke K. Dutta
Improvement in the detection of oxygen in silicon by infra-red absorption
Solid-State Electronics - Tập 12 - Trang 923-925 - 1969
Bernard Pajot
The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method
Solid-State Electronics - Tập 53 - Trang 955-958 - 2009
Qian Feng, Li-Mei Li, Yue Hao, Jin-Yu Ni, Jin-Cheng Zhang
An inner gate as enabler for vertical pitch scaling in macaroni channel gate-all-around 3-D NAND flash memory
Solid-State Electronics - Tập 199 - Trang 108498 - 2023
D. Verreck, A. Arreghini, G. Van den bosch, M. Rosmeulen
Depletion length in semiconductor nanostructures with spherical symmetry
Solid-State Electronics - Tập 114 - Trang 171-173 - 2015
V.L. Borblik
A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon
Solid-State Electronics - Tập 25 - Trang 741-747 - 1982
J.G. Fossum, D.S. Lee
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