Computation of transit and signal delay times for the collector depletion region of GaAs-based HBTs

Solid-State Electronics - Tập 35 - Trang 113-115 - 1992
Haosheng Zhou1, D.L. Pulfrey1
1Department of Electrical Engineering University of British Columbia Vancouver, British Columbia Canada V6T 1W5

Tài liệu tham khảo

Ishibashi, 1988, IEEE Trans. Electron Devices, ED-35, 401, 10.1109/16.2471 Ho, 1989, IEEE Trans. Electron Devices, ED-36, 2173, 10.1109/16.40897 Laux, 1990, IEEE Electron Device Lett., EDL-11, 174, 10.1109/55.61781 Kato, 1989, IEEE Trans. Electron Devices, ED-36, 846, 10.1109/16.299665 Ishibashi, 1990, IEEE Electron Device Lett., EDL-37, 2103, 10.1109/16.57177 Zhou, 1990, IEEE Trans. Electron Devices, ED-37, 2113, 10.1109/16.59899 Fjeldly, 1986, IEEE Trans. Electron Devices, ED-33, 874, 10.1109/T-ED.1986.22589 Hamilton, 1948 Maziar, 1986, IEEE Electron Device Lett., EDL-7, 483, 10.1109/EDL.1986.26447