Pleiades Publishing Ltd
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Sắp xếp:
Redistribution of Current and Loss of Heat in a Reversely Switched Dynistor in the Presence of a Transverse Temperature Gradient
Pleiades Publishing Ltd - Tập 44 Số 12 - Trang 1241-1244 - 2018
Observation of Laser-Induced Spark in the Density Jump in a Gas-Jet Target
Pleiades Publishing Ltd - Tập 45 - Trang 970-972 - 2019
In the design of powerful laser-plasma sources of extreme ultraviolet radiation with a gas jet as the target, the problem of degradation of gas nozzles is topical. Degradation is observed due to insufficient distance from the generation zone of the laser-induced spark to the nozzle exit. The comprehensive solution to this problem is proposed by forming the laser-induced spark in the density jumps that are generated upon deceleration of the supersonic gas jet. In such a density jump, the laser-induced spark is obtained and measurements of emission radiation intensity are performed.
Peculiarities of the Ge(111)-(2×8) crystal face structure studied by electron energy loss spectroscopy
Pleiades Publishing Ltd - Tập 29 - Trang 280-281 - 2003
The dispersion of surface plasma oscillations of a Ge(111)-(2×8) single crystal face was studied by electron energy loss spectroscopy. The experimental data are indicative of a reduced density in the surface layer, which confirms the existing adatom model of the 2×8 surface superstructure.
Particle beam polarization in storage rings controlled by longitudinal magnetic field
Pleiades Publishing Ltd - Tập 29 - Trang 237-239 - 2003
It is suggested to use a longitudinal magnetic field for changing the polarization of particles (electrons, positrons, muons) in the beam of a storage ring. The change from vertical to longitudinal polarization by single or multiple switching of the longitudinal field for a certain time interval is considered.
The rate of transverse propagation of normal zone in aluminum-stabilized superconducting windings
Pleiades Publishing Ltd - - 2000
On the theory of elastic scattering of electromagnetic waves by atoms
Pleiades Publishing Ltd - Tập 28 Số 8 - Trang 652-656 - 2002
Luminescence quenching in erbium-doped phosphate glass films irradiated with hydrogen ions
Pleiades Publishing Ltd - Tập 30 Số 4 - Trang 325-327 - 2004
Investigation of the process of voltage distribution over elements of a high-power semiconductor current interrupter
Pleiades Publishing Ltd - Tập 27 - Trang 857-859 - 2001
The process of voltage distribution over serially connected elements of a high-power semiconductor current interrupter in the stage of current breakage is studied within the framework of a previously developed physicomathematical model. It is established that a mechanism is operative that provides for the voltage drop leveling between unit structures of the p
+-p-n-n
+ type with various depths X
p
of the p-n junctions. The mechanism is related to the fact that the formation of a strong field region on the stage of current breakage in the unit structures with larger X
p
begins later, but the expansion of this region proceeds faster than the same processes in the units with smaller X
p
.
External focusing of nanosecond pulsed X-ray radiation
Pleiades Publishing Ltd - Tập 42 - Trang 135-137 - 2016
The feasibility of efficient focusing of high-power pulsed X-ray radiation generated by explosive electron emission from carbon nanoclusters is shown by direct experiments with the use of polycapillary X-ray optics. It is shown that the X-ray spot in the focus of the polycapillary lens can be reduced to 1/20 of its initial size.
Adjusting the position of the optimum operating point of a power heterostructure field-effect transistor by forming a gate potential barrier based on a donor-acceptor structure
Pleiades Publishing Ltd - Tập 41 - Trang 142-145 - 2015
The first results obtained in engineering research into power heterostructure field-effect transistors operating under zero gate bias are detailed. At a frequency of 10 GHz in pulse mode under gate voltages ranging from −0.2 to +0.2 V, transistors with L-shaped gates with a length of about 0.3 μm and a width of 0.8 mm exhibited a specific power in excess of 1.6 W/mm at a gain in excess of 11 dB and a power-added efficiency of more than 40%.
Tổng số: 5,752
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