Pleiades Publishing Ltd

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Redistribution of Current and Loss of Heat in a Reversely Switched Dynistor in the Presence of a Transverse Temperature Gradient
Pleiades Publishing Ltd - Tập 44 Số 12 - Trang 1241-1244 - 2018
A. V. Gorbatyuk, Б. В. Иванов
Observation of Laser-Induced Spark in the Density Jump in a Gas-Jet Target
Pleiades Publishing Ltd - Tập 45 - Trang 970-972 - 2019
A. N. Nechai, A. A. Perekalov, N. I. Chkhalo, N. N. Salashchenko
In the design of powerful laser-plasma sources of extreme ultraviolet radiation with a gas jet as the target, the problem of degradation of gas nozzles is topical. Degradation is observed due to insufficient distance from the generation zone of the laser-induced spark to the nozzle exit. The comprehensive solution to this problem is proposed by forming the laser-induced spark in the density jumps that are generated upon deceleration of the supersonic gas jet. In such a density jump, the laser-induced spark is obtained and measurements of emission radiation intensity are performed.
Peculiarities of the Ge(111)-(2×8) crystal face structure studied by electron energy loss spectroscopy
Pleiades Publishing Ltd - Tập 29 - Trang 280-281 - 2003
N. N. Gorobei, V. E. Korsukov, A. S. Luk’yanenko, R. R. Nazarov, B. A. Obidov
The dispersion of surface plasma oscillations of a Ge(111)-(2×8) single crystal face was studied by electron energy loss spectroscopy. The experimental data are indicative of a reduced density in the surface layer, which confirms the existing adatom model of the 2×8 surface superstructure.
Particle beam polarization in storage rings controlled by longitudinal magnetic field
Pleiades Publishing Ltd - Tập 29 - Trang 237-239 - 2003
A. Ya. Silenko
It is suggested to use a longitudinal magnetic field for changing the polarization of particles (electrons, positrons, muons) in the beam of a storage ring. The change from vertical to longitudinal polarization by single or multiple switching of the longitudinal field for a certain time interval is considered.
The rate of transverse propagation of normal zone in aluminum-stabilized superconducting windings
Pleiades Publishing Ltd - - 2000
В. В. Лысенко, O.P. Anashkin
On the theory of elastic scattering of electromagnetic waves by atoms
Pleiades Publishing Ltd - Tập 28 Số 8 - Trang 652-656 - 2002
С. О. Гладков
Luminescence quenching in erbium-doped phosphate glass films irradiated with hydrogen ions
Pleiades Publishing Ltd - Tập 30 Số 4 - Trang 325-327 - 2004
О. Н. Горшков, A.V. Dmitryuk, В. А. Камин, А. П. Касаткин, М. Н. Михайлов, В. А. Новиков, A. B. Chigineva, Yu. I. Chigirinskii
Investigation of the process of voltage distribution over elements of a high-power semiconductor current interrupter
Pleiades Publishing Ltd - Tập 27 - Trang 857-859 - 2001
A. V. Ponomarev, S. N. Rukin, S. N. Tsyranov
The process of voltage distribution over serially connected elements of a high-power semiconductor current interrupter in the stage of current breakage is studied within the framework of a previously developed physicomathematical model. It is established that a mechanism is operative that provides for the voltage drop leveling between unit structures of the p +-p-n-n + type with various depths X p of the p-n junctions. The mechanism is related to the fact that the formation of a strong field region on the stage of current breakage in the unit structures with larger X p begins later, but the expansion of this region proceeds faster than the same processes in the units with smaller X p .
External focusing of nanosecond pulsed X-ray radiation
Pleiades Publishing Ltd - Tập 42 - Trang 135-137 - 2016
A. A. Begidov, G. N. Fursey, M. A. Polyakov
The feasibility of efficient focusing of high-power pulsed X-ray radiation generated by explosive electron emission from carbon nanoclusters is shown by direct experiments with the use of polycapillary X-ray optics. It is shown that the X-ray spot in the focus of the polycapillary lens can be reduced to 1/20 of its initial size.
Adjusting the position of the optimum operating point of a power heterostructure field-effect transistor by forming a gate potential barrier based on a donor-acceptor structure
Pleiades Publishing Ltd - Tập 41 - Trang 142-145 - 2015
V. M. Lukashin, A. B. Pashkovskii, V. G. Lapin, S. V. Shcherbakov, K. S. Zhuravlev, A. I. Toropov, A. A. Kapralova
The first results obtained in engineering research into power heterostructure field-effect transistors operating under zero gate bias are detailed. At a frequency of 10 GHz in pulse mode under gate voltages ranging from −0.2 to +0.2 V, transistors with L-shaped gates with a length of about 0.3 μm and a width of 0.8 mm exhibited a specific power in excess of 1.6 W/mm at a gain in excess of 11 dB and a power-added efficiency of more than 40%.
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